×

Method of forming a layer and method of forming a capacitor of a semiconductor device having the same

  • US 20060063346A1
  • Filed: 06/10/2005
  • Published: 03/23/2006
  • Est. Priority Date: 06/10/2004
  • Status: Abandoned Application
First Claim
Patent Images

1. A method of forming a layer comprising:

  • forming a preliminary layer comprising atoms on a substrate by an atomic layer deposition (ALD) process; and

    partially removing the atoms from the preliminary layer using a plasma, the plasma being formed from a gas.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×