Microelectromechanical system pressure sensor and method for making and using
First Claim
1. A method, comprising:
- forming a conducting layer on a first wafer;
forming an insulating layer on a second wafer, wherein the insulating layer includes a cavity;
bonding a side of the conducting layer opposite the first wafer to a side of the insulating layer opposite the second wafer; and
removing at least a portion of the first wafer without removing at least a portion of the conducting layer associated with the cavity to form a diaphragm substantially parallel to the second wafer.
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Accused Products
Abstract
According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.
26 Citations
24 Claims
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1. A method, comprising:
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forming a conducting layer on a first wafer;
forming an insulating layer on a second wafer, wherein the insulating layer includes a cavity;
bonding a side of the conducting layer opposite the first wafer to a side of the insulating layer opposite the second wafer; and
removing at least a portion of the first wafer without removing at least a portion of the conducting layer associated with the cavity to form a diaphragm substantially parallel to the second wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A sensor apparatus, comprising:
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a wafer having a substantially flat surface defining a plane;
an insulating layer on the surface of the wafer, the insulating layer including a cavity;
a conducting portion associated with the wafer and proximate to the cavity; and
a conducting diaphragm bonded to the insulating layer, wherein the conducing diaphragm covers the cavity and is substantially parallel to the plane. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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21. A pressure sensor, comprising:
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a lightly doped silicon wafer having a substantially flat surface defining a plane;
an oxide layer formed on the surface of the silicon wafer, the insulating layer including a cavity;
a highly doped conductive implant area in the silicon wafer in an area proximate to the cavity;
a conducting diaphragm bonded to the oxide layer, wherein the conducing diaphragm covers the cavity and is substantially parallel to the plane; and
a device to measure capacitance between the implant area and the conducting diaphragm.
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22. A method, comprising:
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providing a voltage level to at least one of (i) a conducting portion associated with a wafer having a substantially flat surface defining a plane, the wafer having an insulating layer on the surface, and the insulating layer having a cavity proximate to the conducting portion and (ii) a conducting diaphragm bonded to the insulating layer, the conducing diaphragm covering the cavity and being substantially parallel to the plane; and
measuring pressure based at least in part on capacitance between the conducting portion and the conducting diaphragm.
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23. A system, comprising:
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a microelectromechanical system pressure sensor, including;
a wafer having a substantially flat surface defining a plane, an insulating layer on the surface of the wafer, the insulating layer including a cavity, a conducting portion associated with the wafer and proximate to the cavity, and a conducting diaphragm bonded to the insulating layer, wherein the conducing diaphragm covers the cavity and is substantially parallel to the plane; and
a pressure dependent device. - View Dependent Claims (24)
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Specification