Aluminum cap for reducing scratch and wire-bond bridging of bond pads
First Claim
1. A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece, the workpiece having at least one conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls;
forming a barrier layer over the at least one conductive pad, wherein the barrier layer lines the sidewalls of the opening in the passivation layer and is disposed over a top portion of the passivation layer proximate the opening;
forming a conductive cap over the barrier layer within the opening in the passivation layer; and
recessing the conductive cap to a height below the top surface of the passivation layer.
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Accused Products
Abstract
A method of manufacturing a semiconductor device and structure thereof. The method includes providing a workpiece, the workpiece having at least one conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls. A barrier layer is formed over the at least one conductive pad, wherein the barrier layer lines the sidewalls of the opening in the passivation layer and is disposed over a top portion of the passivation layer proximate the opening. A conductive cap is formed over the barrier layer within the opening in the passivation layer, and the conductive cap is recessed to a height below the top surface of the passivation layer. The conductive cap may be used for testing with a probe or may be used for wire-bonding.
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Citations
40 Claims
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1. A method of manufacturing a semiconductor device, the method comprising:
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providing a workpiece, the workpiece having at least one conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls;
forming a barrier layer over the at least one conductive pad, wherein the barrier layer lines the sidewalls of the opening in the passivation layer and is disposed over a top portion of the passivation layer proximate the opening;
forming a conductive cap over the barrier layer within the opening in the passivation layer; and
recessing the conductive cap to a height below the top surface of the passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a bond pad for a semiconductor device, the method comprising:
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providing a workpiece;
forming at least one conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls, the at least one conductive pad being electrically connected to an element within the workpiece;
forming a conductive cap over the at least one conductive pad within the opening in the passivation layer, the conductive cap comprising aluminum; and
isotropically etching the conductive cap to recess the conductive cap to a height below the top surface of the passivation layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A semiconductor device, comprising:
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a workpiece, the workpiece having at least one conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls;
a barrier layer disposed over the at least one conductive pad, wherein the barrier layer lines the sidewalls of the opening in the passivation layer and is disposed over a top portion of the passivation layer proximate the opening; and
a conductive cap disposed over the barrier layer within the opening in the passivation layer, wherein the conductive cap is recessed below the top surface of the passivation layer. - View Dependent Claims (30, 31, 32, 33)
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34. A bonding system for a semiconductor device, comprising:
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a conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls, the at least one conductive pad being electrically connected to an element within a workpiece; and
a conductive cap disposed over the at least one conductive pad within the opening in the passivation layer, the conductive cap comprising aluminum and being recessed below the top surface of the passivation layer. - View Dependent Claims (35, 36, 37, 38, 39, 40)
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Specification