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Aluminum cap for reducing scratch and wire-bond bridging of bond pads

  • US 20060063365A1
  • Filed: 09/23/2004
  • Published: 03/23/2006
  • Est. Priority Date: 09/23/2004
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • providing a workpiece, the workpiece having at least one conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls;

    forming a barrier layer over the at least one conductive pad, wherein the barrier layer lines the sidewalls of the opening in the passivation layer and is disposed over a top portion of the passivation layer proximate the opening;

    forming a conductive cap over the barrier layer within the opening in the passivation layer; and

    recessing the conductive cap to a height below the top surface of the passivation layer.

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