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Integrated barrier and seed layer for copper interconnect technology

  • US 20060063375A1
  • Filed: 09/20/2004
  • Published: 03/23/2006
  • Est. Priority Date: 09/20/2004
  • Status: Active Grant
First Claim
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1. A method for fabricating an integrated barrier and seed layer comprising:

  • providing a dielectric layer having a plurality of recessed vias and trenches;

    depositing a metal nitride over a surface of each of the vias and trenches to form a barrier layer; and

    depositing a ruthenium or a ruthenium alloy over the barrier layer to form a seed layer.

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