Optical metrology model optimization based on goals

• US 20060064280A1
• Filed: 09/21/2004
• Published: 03/23/2006
• Est. Priority Date: 09/21/2004
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Timbre Technologies Incorporated (Tokyo Electron Limited)
• Inventors: Li, Shifang, Vuong, Vi, Bao, Junwei, Drege, Emmanuel
• Granted Patent: US 7,171,284 B2
• Time in Patent Office: Days
• US Class Current: 702/182
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

The optimization of an optical metrology model for use in measuring a wafer structure is evaluated. An optical metrology model having metrology model variables, which includes profile model parameters of a profile model, is developed. One or more goals for metrology model optimization are selected. One or more profile model parameters to be used in evaluating the one or more selected goals are selected. One or more metrology model variables to be set to fixed values are selected. One or more selected metrology model variables are set to fixed values. One or more termination criteria for the one or more selected goals are set. The optical metrology model is optimized using the fixed values for the one or more selected metrology model variables. Measurements for the one or more selected profile model parameters are obtained using the optimized optical metrology model. A determination is then made as to whether the one or more termination criteria are met by the obtained measurements.

Claims

1. A method of evaluating optimization of an optical metrology model for use in measuring a wafer structure, the method comprising:

a) developing an optical metrology model, the optical metrology model having metrology model variables, which includes profile model parameters of a profile model;

b) selecting one or more goals for metrology model optimization;

c) selecting one or more profile model parameters to be used in evaluating the one or more selected goals;

d) selecting one or more metrology model variables to be set to fixed values;

e) setting the one or more selected metrology model variables to fixed values;

f) setting one or more termination criteria for the one or more selected goals;

g) optimizing the optical metrology model using the fixed values for the one or more selected metrology model variables;

h) obtaining measurements for the one or more selected profile model parameters using the optimized optical metrology model; and

i) determining if the one or more termination criteria are met by the obtained measurements.

2. The method of claim 1 wherein developing the optical metrology model comprises:

specifying metrology model variables of the optical metrology model related to a fabrication recipe;

specifying metrology model variables of the optical metrology model related to one or more metrology devices;

specifying metrology model variables of the optical metrology model related to simulation technique;

specifying metrology model variables of the optical metrology model related to materials used in the structure; and

specifying metrology model variables of the optical metrology model related to the profile model of the structure.

3. The method of claim 2 wherein the metrology model variables of the optical metrology model related to one or more metrology devices include wavelength of the incident beam or beams, the angle of incidence of the incident beam, beam intensity, wavelength calibration error, polarization dependent loss, spectrometer resolution, azimuth angle, and/or numerical aperture.

4. The method of claim 2 wherein the metrology model variables of the optical metrology model related to the simulation technique include wavelength analyzed, resolution, diffraction orders, and diffraction simulation algorithm.

5. The method of claim 4 wherein the diffraction simulation algorithm includes rigorous coupled-wave analysis (RCWA), modal analysis, integral method, Green'"'"'s functions, Fresnel method, or finite element analysis.

6. The method of claim 2 wherein the metrology model variables of the optical metrology model related to materials used in the structure include refractive index and extinction coefficient.

7. The method of claim 2 wherein the metrology model variables of the optical metrology model related to the profile model of the structure include thickness of underlying films, pitch, width of structure at various heights, height of structure, sidewall angle, and/or footing.

8. The method of claim 1 wherein the one or more goals for metrology model optimization selected in b) include precision, accuracy, critical dimension uniformity, correlation coefficient, goodness-of-fit, cost function, figure of merit, throughput, closeness of match of measurements made with different metrology devices, cost of ownership, and/or return on investment.

9. The method of claim 8 wherein precision includes static, dynamic, and/or long term precision.

10. The method of claim 8 wherein closeness of match of measurements made with different metrology devices includes absolute measurement difference, average correlation ratio between a metrology system to a reference metrology system, standard mean deviation (σ

), multiples of standard mean deviation, and/or total measurement uncertainty.

11. The method of claim 1 wherein the one or more goals selected in b) include static and dynamic precision of measurement, and wherein the one or more profile model parameters selected in c) include a bottom width of the structure.

12. The method of claim 1 wherein the one or more goals selected in b) include accuracy of measurement, and wherein the one or more profile model parameters selected in c) include a middle critical dimension of the structure.

13. The method of claim 1 wherein the one or more goals selected in b) include total measurement uncertainty (TMU) and/or critical dimension uniformity, and wherein the one or more profile model parameters selected in c) include a middle critical dimension of the structure.

14. The method of claim 1 wherein the one or more metrology model variables selected in d) include metrology model variables related to metrology devices.

15. The method of claim 1 wherein the one or more metrology model variables selected in d) include metrology model variables related to materials of the structure.

16. The method of claim 1 wherein the one or more metrology model variables selected in d) include metrology model variables related to the profile model of the structure.

17. The method of claim 1 wherein the one or more termination criteria set in f) include ranges of precision, accuracy, critical dimension uniformity, correlation coefficient, goodness-of-fit, cost function, throughput, closeness of match of measurements made with different metrology devices, cost of ownership, and/or return on investment.

18. The method of claim 1 wherein the one or more termination criteria set in f) include a range of total measurement uncertainty of measurements made with a new metrology device compared to a reference metrology device.

19. The method of claim 1 wherein optimization of the optical metrology model performed in g) includes utilizing global optimization techniques.

20. The method of claim 19 wherein the global optimization technique includes simulated annealing, genetic algorithms, tabu search, neural networks, or branch-and-bound technique.

21. The method of claim 1 wherein optimization of the optical metrology model performed in g) includes utilizing local optimization techniques.

22. The method of claim 1 wherein optimization of the optical metrology model performed in g) includes utilizing a combination of global and local optimization techniques.

23. The method of claim 22 wherein optimization of the optical metrology model performed in g) includes utilizing a combination of genetic algorithms and a local optimization technique.

24. The method of claim 22 wherein optimization of the optical metrology model performed in g) includes utilizing a combination of simulated annealing and a local optimization technique.

25. The method of claim 1 wherein if the one or more termination criteria are not met in i):

j) revising the selection of metrology model variables in d) and/or the fixed values set to the selected metrology model variables in e); and

k) iterating steps g), h), and i).

26. The method of claim 25 wherein revising the selection of metrology model variables comprises allowing one or more metrology model variables to float instead of being set to fixed values.

27. The method of claim 25 wherein revising selection of metrology model variables comprises setting one or more metrology model variables to fixed values instead of being allowed to float.

28. The method of claim 1 wherein if the one or more termination criteria are not met in i):

changing the termination criteria;

or adding additional termination criteria.

29. The method of claim 1 wherein if the one or more termination criteria are met in i):

collecting verification data using the optimized optical metrology model; and

determining if the collected verification data meet the one or more selected goals within acceptable ranges.

30. The method of claim 29 wherein if the collected verification data do not meet the one or more selected goals within acceptable ranges:

revising the selection of the one or more metrology model goals in b);

or

revising one or more of metrology model variables of the optical metrology model.

31. The method of claim 30 wherein revising one or more metrology model variables of the optical metrology model include changing diffraction simulation technique to rigorous coupled-wave analysis (RCWA), modal analysis, integral method, Green'"'"'s functions, Fresnel method, or finite element analysis.

32. A method of evaluating optimization of an optical metrology model for use in measuring a wafer structure, the method comprising:

a) developing an initial optical metrology model;

b) selecting one or more goals for metrology model optimization;

c) optimizing the initial optical metrology model to obtain a first optimized optical metrology model using a first metrology device assumption that includes one or more characteristics of a first metrology device that can be used to measure the wafer structure;

d) optimizing the initial optical metrology model to obtain at least a second optimized optical metrology model using a second metrology device assumption that includes one or more characteristics of a second metrology device that can be used to measure the wafer structure, wherein the first and second metrology device assumptions differ; and

e) selecting a preferred metrology device based on the first and at least second optimized optical metrology models and the one or more selected goals.

33. The method of claim 32 wherein e) comprises:

obtaining measurements of the wafer structure using the first and at least second optimized optical metrology models;

evaluating the one or more selected goals using the obtained measurements;

when the obtained measurements using the first optimized optical metrology model better meets the one or more selected goals, selecting as the preferred metrology device a metrology device with characteristics that are most similar to the first metrology device; and

when the obtained measurements using the at least second optimized optical metrology model better meets the one or more selected goals, selecting as the preferred metrology device a metrology device with characteristics that are most similar to the second metrology device.

34. The method of claim 33 wherein the measurements of the wafer structure are obtained using the first and at least second optical metrology devices.

35. The method of claim 32 wherein the characteristics of the first or second metrology device include angle of incidence of an incident beam.

36. The method of claim 32 wherein the characteristics of the first or second metrology device include beam intensity, wavelength calibration error, spectrometer resolution, azimuth angle, and numerical aperture.

37. The method of claim 32 wherein the first metrology device is a reflectometer, and wherein the second metrology device is an ellipsometer.

38. The method of claim 32 wherein the one or more goals for metrology model optimization selected in b) include precision, accuracy, critical dimension uniformity, correlation coefficient, goodness-of-fit, cost function, figure of merit, throughput, closeness of match of measurements made with different metrology devices, cost of ownership, and/or return on investment.

39. A method of evaluating optimization of an optical metrology model for use in measuring a wafer structure, the method comprising:

a) developing an optical metrology model having one or more optical metrology variables related to metrology devices;

b) selecting one or more goals for metrology model optimization;

c) selecting one or more of the metrology model variables related to optical metrology devices;

d) optimizing the optical metrology model with the one or more selected metrology model variables related to optical metrology devices allowed to float over a range of values; and

e) selecting a metrology device based on optimized values of the one or more selected metrology model variables obtained from the optimized optical metrology model.

40. The method of claim 39 wherein the one or more selected metrology model variables related to optical metrology devices include angle of incidence, azimuth angle, and/or wavelength.

41. The method of claim 39 wherein the one or more goals for metrology model optimization selected in b) include precision, accuracy, critical dimension uniformity, correlation coefficient, goodness-of-fit, cost function, figure of merit, throughput, closeness of match of measurements made with different metrology devices, cost of ownership, and/or return on investment.

42. A system for evaluating optimization of an optical metrology model for use in measuring wafer structures, the system comprising:

a model preprocessor configured to develop an optical metrology model having metrology model variables, which includes profile parameters of a profile model;

a metrology model optimizer configured to optimize the optical metrology model using fixed values for one or more selected metrology model variables of the optical metrology model;

a first metrology device configured to measure one or more selected profile model parameters using the optimized optical metrology model; and

a comparator configured to determine if one or more termination criteria are met by the measurements obtained using the first metrology device, wherein the one or more termination criteria include one or more goals for metrology model optimization.

43. The system of claim 42 further comprising:

a model adjuster configured to receive data from the comparator, to revise the one or more selected metrology model variables, and to revise fixed values for the one or more selected metrology model variables.

44. The system of claim 42 wherein the model preprocessor is configured to process input data, including fabrication recipe data, metrology device data, optimization goals, selected profile model parameters, optimization termination criteria, fixed values for metrology model variables.

45. The system of claim 44 wherein the metrology model optimizer is configured to receive transmitted data from the model preprocessor and the first metrology device, to invoke a global optimizer, a local optimizer, or a combined global and local optimizer, and to extract values of the selected profile model parameter measurements from the first metrology device, and to transmit the extracted values and optimization termination criteria.

46. The system of claim 45, wherein the comparator is configured to receive the values and optimization termination criteria, and to evaluate the optimization goals based on the received values.

47. The system of claim 42 wherein the first metrology device is a scatterometric device.

48. The system of claim 47 wherein the scatterometric device is a reflectometer or ellipsometer.

49. The system of claim 42 wherein the metrology optimizer includes a global optimizer, which includes a simulated annealing, genetic algorithm, tabu search, neural network, or branch-and-bound technique.

50. The system of claim 42 wherein the metrology optimizer includes a local optimizer, which includes steepest descent or hill climber.

51. The system of claim 42 further comprising a second metrology device configured to measure the one or more selected profile model parameters.

52. The system of claim 51 wherein the second metrology device is a critical dimension scanning electron microscope, a critical dimension atomic force microscope, a cross section scanning electron microscope, a transmission electron microscope, or a scatterometer.

53. A computer-readable storage medium containing computer executable instructions for causing a computer to optimize an optical metrology model for use in measuring a wafer structure, comprising instructions for:

a) developing an optical metrology model, the optical metrology model having metrology model variables, which includes profile model parameters of a profile model;

b) selecting one or more goals for metrology model optimization;

c) selecting one or more profile model parameters to be used in evaluating the one or more selected goals;

d) selecting one or more metrology model variables to be set to fixed values;

e) setting the one or more selected metrology model variables to fixed values;

f) setting one or more termination criteria for the one or more selected goals;

g) optimizing the optical metrology model using the fixed values for the one or more selected metrology model variables;

h) obtaining measurements for the one or more selected profile model parameters using the optimized optical metrology model; and

i) determining if the one or more termination criteria are met by the obtained measurements.

54. A computer-readable storage medium containing computer executable instructions for causing a computer to optimize an optical metrology model for use in measuring a wafer structure, comprising instructions for:

a) developing an initial optical metrology model;

b) selecting one or more goals for metrology model optimization;

c) optimizing the initial optical metrology model to obtain a first optimized optical metrology model using a first metrology device assumption that includes one or more characteristics of a first metrology device that can be used to measure the wafer structure;

d) optimizing the initial optical metrology model to obtain at least a second optimized optical metrology model using a second metrology device assumption that includes one or more characteristics of a second metrology device that can be used to measure the wafer structure, wherein the first and second metrology device assumptions differ; and

e) selecting a preferred metrology device based on the first and at least second optimized optical metrology models and the one or more selected goals.

55. A computer-readable storage medium containing computer executable instructions for causing a computer to optimize an optical metrology model for use in measuring a wafer structure, comprising instructions for:

a) developing an optical metrology model having one or more optical metrology variables related to metrology devices;

b) selecting one or more goals for metrology model optimization;

c) selecting one or more of the metrology model variables related to optical metrology devices;

d) optimizing the optical metrology model with the one or more selected metrology model variables related to optical metrology devices allowed to float over a range of values; and

e) selecting a metrology device based on optimized values of the one or more selected metrology model variables obtained from the optimized optical metrology model.