Photovoltaic device
First Claim
Patent Images
1. A photovoltaic device comprising:
- a crystalline semiconductor substrate;
a substantially intrinsic amorphous semiconductor thin-film layer containing hydrogen and provided on the crystalline semiconductor substrate;
a doped amorphous semiconductor thin-film layer containing hydrogen and provided on the intrinsic amorphous semiconductor thin-film layer; and
a hydrogen-diffusion reducing area provided between the doped amorphous semiconductor thin-film layer and the intrinsic amorphous semiconductor thin-film layer and reducing hydrogen diffusion from the intrinsic amorphous semiconductor thin-film layer to the doped amorphous semiconductor thin-film layer.
1 Assignment
0 Petitions
Accused Products
Abstract
In the photovoltaic devices comprising a substantially intrinsic amorphous silicon layer containing hydrogen between an n-type single-crystal silicon substrate and a p-type amorphous silicon layer containing hydrogen, the photovoltaic device according to the present invention comprises a trap layer that contains less hydrogen than the intrinsic amorphous silicon layer between the p-type amorphous silicon layer and the intrinsic amorphous silicon layer. The trap layer reduces hydrogen diffusion from the intrinsic amorphous silicon layer to the p-type amorphous silicon layer.
-
Citations
16 Claims
-
1. A photovoltaic device comprising:
-
a crystalline semiconductor substrate;
a substantially intrinsic amorphous semiconductor thin-film layer containing hydrogen and provided on the crystalline semiconductor substrate;
a doped amorphous semiconductor thin-film layer containing hydrogen and provided on the intrinsic amorphous semiconductor thin-film layer; and
a hydrogen-diffusion reducing area provided between the doped amorphous semiconductor thin-film layer and the intrinsic amorphous semiconductor thin-film layer and reducing hydrogen diffusion from the intrinsic amorphous semiconductor thin-film layer to the doped amorphous semiconductor thin-film layer. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A photovoltaic device comprising:
-
an n-type single-crystal silicon substrate;
a substantially intrinsic amorphous silicon layer containing hydrogen and provided on the single-crystal silicon substrate;
a p-type amorphous silicon layer containing hydrogen and provided on the intrinsic amorphous silicon layer; and
a hydrogen-diffusion reducing area provided between the p-type amorphous silicon layer and the intrinsic amorphous silicon layer and reducing hydrogen diffusion from the intrinsic amorphous silicon layer to the p-type amorphous silicon layer. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
-
Specification