Portable etch chamber

• US 20060065366A1
• Filed: 01/28/2005
• Published: 03/30/2006
• Est. Priority Date: 09/27/2004
• Status: Abandoned Application

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Inventors: Floyd, Philip D., Cummings, William J., Arbuckle, Brian W.
• Application Number:
  US11/045,588
• Publication Number:
  US 20060065366A1
• Time in Patent Office: Days
• US Class Current: 156/345.290
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

An etching chamber is configured to support a MEMS substrate within the chamber. The etching chamber is configured to be relatively easy to move and attach to an etch station that includes a source of vapor or gaseous etchant, a source of purge gas and/or a vacuum source. The portable etching chamber may facilitate a process for etching the MEMS substrate contained therein. For example, a MEMS substrate in such an etching chamber may be etched by connecting the chamber into an etch station and exposing the MEMS substrate to an etchant in order to etch the MEMS substrate. The substrate can be moved to or from the etch station within the portable etching chamber. In preferred embodiments, the MEMS substrate is an interferometric modulator and the etchant is XeF₂.

Claims

1. A XeF₂ etching system comprising:

an etch station comprising at least one source selected from the group consisting of a XeF₂ vapor source, a vacuum source and a purge gas source;

a sealable container comprising

an inlet configured for attachment to the at least one source; and

a holder configured to support at least one MEMS substrate within the sealable container during movement of the sealable container;

the sealable container being configured for detachment from the at least one source and being configured to facilitate movement relative to the at least one source.

2. The XeF₂ etching system of claim 1 in which the at least one source is a vacuum source.

3. The XeF₂ etching system of claim 1 in which the at least one source is a XeF₂ vapor source.

4. The XeF₂ etching system of claim 1 in which the at least one source is a purge gas source.

5. The XeF₂ etching system of claim 1 in which the holder is configured to support an interferometric modulator substrate.

6. The XeF₂ etching system of claim 5 further comprising a detector configured to detect a color change on the interferometric modulator substrate, the color change being indicative of the extent of XeF₂ substrate etching.

7. The XeF₂ etching system of claim 6 in which the detector comprises a fiber optic bundle.

8. The XeF₂ etching system of claim 6 in which the etching system comprises a light source configured to illuminate the interferometric modulator substrate to thereby produce reflected light, the detector being configured to detect the reflected light.

9. The XeF₂ etching system of claim 1 further comprising a computer operably connected to the XeF₂ etching system and programmed to control one or more stages of an XeF₂ etching process.

10. The XeF₂ etching system of claim 9 in which the computer is programmed to receive input from a detector.

11. The XeF₂ etching system of claim 10 in which the detector is configured to detect a color change on the interferometric modulator substrate.

12. A portable XeF₂ etching chamber comprising:

a sealable container comprising an inlet configured for attachment to a vacuum source; and

a holder configured to support at least one MEMS substrate within the sealable container during movement of the sealable container;

the sealable container being configured to facilitate movement relative to the vacuum source.

13. The portable XeF₂ etching chamber of claim 12 in which the holder is configured to support an interferometric modulator substrate.

14. The portable XeF₂ etching chamber of claim 13 in which the sealable container further comprises a window configured to facilitate observation of the interferometric modulator substrate from the exterior of the sealable container.

15. The portable XeF₂ etching chamber of claim 14 in which the window is configured to facilitate detection of a color change on the interferometric modulator substrate, where the color change is indicative of the extent of XeF₂ etching.

16. The portable XeF₂ etching chamber of claim 13 further comprising a handle attached to the sealable container and configured to facilitate lifting of the portable XeF₂ etching chamber.

17. The portable XeF₂ etching chamber of claim 13 further comprising a plurality of wheels configured to facilitate movement of the portable XeF₂ etching chamber.

18. The portable XeF₂ etching chamber of claim 13 further comprising a door configured to facilitate placing the interferometric modulator substrate into the chamber.

19. A portable XeF₂ etching chamber comprising sealable means for containing XeF₂ vapor and means for holding at least one MEMS substrate to facilitate etching of the MEMS substrate by the XeF₂ vapor.

20. The portable XeF₂ etching chamber of claim 19 in which the means for holding at least one MEMS substrate comprises at least two supports positioned on opposite sides of the MEMS substrate.

21. The portable XeF₂ etching chamber of claim 19 in which the sealable means for containing XeF₂ vapor comprises a container, the container comprising a door and at least one seal in contact with the door, the seal and door being configured to substantially prevent XeF₂ vapor from escaping the container.

22. The portable XeF₂ etching chamber of claim 21 in which the means for holding at least one MEMS substrate comprises at least one slot on a wall of the container.

23. The portable XeF₂ etching chamber of claim 19 further comprising means for attaching the sealable means to a source of XeF₂ vapor.

24. The portable XeF₂ etching chamber of claim 23 in which the means for attaching the sealable means to a source of XeF₂ vapor comprises a quick connect valve.

25. The portable XeF₂ etching chamber of claim 19 further comprising means for moving the portable XeF₂ etching chamber.

26. The portable XeF₂ etching chamber of claim 25 in which the means for moving the portable XeF₂ etching chamber comprises at least one selected from the group consisting of a wheel, a substantially low-friction sliding surface, and a handle.

27. The portable XeF₂ etching chamber of claim 26 in which the wheel is a roller.

28. The portable XeF₂ etching chamber of claim 26 in which the wheel is a caster.

29. A method for etching a MEMS substrate, comprising:

moving a portable etching chamber to a location in operable proximity to a source of etchant;

attaching the portable etching chamber to the source of etchant;

exposing a MEMS substrate supported in the portable chamber to the etchant for a period of time that is effective to etch the MEMS substrate to form a released MEMS substrate;

detaching the portable etching chamber from the source of etchant;

moving the portable etching chamber away from the source of etchant; and

unloading the released MEMS substrate from the portable etching chamber.

30. The method of claim 29 further comprising inserting the MEMS substrate into the portable etching chamber prior to attaching the portable etching chamber to the source of etchant.

31. The method of claim 29 in which the portable etching chamber comprises a sealable container comprising an inlet configured for attachment to the source of etchant and a holder configured to support the MEMS substrate within the sealable container.

32. The method of claim 29 in which the etchant comprises XeF₂ vapor.

33. The method of claim 32 in which the MEMS substrate is a partially fabricated interferometric modulator.

34. The method of claim 29 in which the portable etching chamber comprises wheels.

35. The method of claim 34 in which the step of moving the portable etching chamber comprises rolling the wheels along a surface.

36. The method of claim 29 in which the step of moving the portable etching chamber comprises lifting the portable etching chamber.

37. The method of claim 29 in which the portable etching chamber weighs about 20 kilograms or less.

38. The method of claim 29 in which the portable etching chamber weighs about 100 kilograms or less.

39. The method of claim 30 in which, after the step of inserting the MEMS substrate into the portable etching chamber, the MEMS substrate is stored in the portable etching chamber for at least about one hour prior to the step of attaching the portable etching chamber to the source of etchant.

40. The method of claim 30 in which, after the step of inserting the MEMS substrate into the portable etching chamber, the MEMS substrate is stored in the portable etching chamber for at least about one day prior to the step of attaching the portable etching chamber to the source of etchant.

41. The method of claim 29 further comprising attaching the portable etching chamber to a vacuum pump.

42. The method of claim 29 in which the step of moving the portable etching chamber comprises transporting the portable etching chamber a distance of at least about 10 meters.

43. The method of claim 42 in which the distance is at least about 100 meters.

44. The method of claim 42 in which the distance is at least about one kilometer.

45. The method of claim 29 in which the MEMS substrate is exposed to the etchant for a period of time that is effective to fully release the MEMS substrate.

46. The method of claim 29 comprising unloading the released MEMS substrate from the portable etching chamber prior to moving the portable etching chamber away from the source of etchant.

47. The method of claim 29 comprising unloading the released MEMS substrate from the portable etching chamber after detaching the portable etching chamber from the source of etchant.

48. The method of claim 29 comprising unloading the released MEMS substrate from the portable etching chamber after moving the portable etching chamber away from the source of etchant.

49. The method of claim 29 further comprising inserting the MEMS substrate into the portable etching chamber after attaching the portable etching chamber to the source of etchant.

50. A method for etching a MEMS substrate, comprising:

inserting a MEMS substrate into a portable etching chamber;

moving the portable etching chamber having the MEMS substrate housed therein to a location in operable proximity to an etch station;

connecting the portable etching chamber to the etch station; and

etching the MEMS substrate within the portable chamber while the portable etching chamber is attached to the etch station.

51. The method of claim 50 comprising moving the portable etching chamber before connecting the portable etching chamber to the etch station.

52. The method of claim 50 further comprising moving the portable etching chamber away from the etch station.

53. The method of claim 50 comprising inserting the MEMS substrate into the portable etching chamber before the connecting the portable etching chamber to the etch station.

54. A portable XeF₂ etching chamber comprising:

a sealable container comprising an inlet configured for attachment to at least one source, the at least one source being selected from the group consisting of a XeF₂ vapor source, a vacuum source and a purge gas source; and

a holder configured to support at least one MEMS substrate within the sealable container during movement of the container;

the sealable container being configured to facilitate movement relative to the at least one source.

55. The portable XeF₂ etching chamber of claim 54 in which the at least one source is selected from the group consisting of a vacuum source and a purge gas source

56. The portable XeF₂ etching chamber of claim 55 in which the sealable container is configured to contain a quantity of solid XeF₂ that is effective to etch the at least one MEMS substrate.