Method and system for xenon fluoride etching with enhanced efficiency
First Claim
1. An apparatus for etching comprising an etching chamber and a etchant module, wherein the etchant module is movable between a retracted position and an extended position, in the retracted position, the etchant module is substantially outside the etching chamber, and in the extended position the etchant module is substantially within the etching chamber.
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Accused Products
Abstract
Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.
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Citations
34 Claims
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1. An apparatus for etching comprising an etching chamber and a etchant module, wherein
the etchant module is movable between a retracted position and an extended position, in the retracted position, the etchant module is substantially outside the etching chamber, and in the extended position the etchant module is substantially within the etching chamber.
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9. An apparatus for etching comprising:
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an etching chamber, a support for a substrate on which microelectromechanical device is formed, an etchant module, and a means for positioning the support and the etchant module in close proximity within the etching chamber. - View Dependent Claims (10)
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- 11. An apparatus for etching comprising a chamber, a support for a substrate on which a microelectromechanical systems device is formed, and solid xenon difluoride, wherein the support and the solid xenon difluoride are disposed within the chamber.
- 13. An apparatus for etching comprising a support for a substrate on which a microelectromechanical systems device is formed and solid xenon difluoride, wherein the support and the solid xenon difluoride are sufficiently proximate for a vapor formed from the solid xenon difluoride to etch a substrate comprising an etchable material.
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15. A method for fabricating a microelectromechanical systems device comprising:
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disposing within an etching chamber a substrate comprising an etchable material, and disposing within the etching chamber a solid etchant, wherein the solid etchant forms a gas-phase etchant capable of etching the etchable material. - View Dependent Claims (16, 17, 18, 19)
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20. A method for fabricating a microelectromechanical systems device comprising:
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disposing a substrate within an etching chamber;
extending an etchant module into the etching chamber, wherein a solid etchant is supported on the etchant module, and the solid etchant forms a gas-phase etchant capable of etching a material on the substrate; and
allowing the gas-phase etchant to etch the material. - View Dependent Claims (21, 22, 23)
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24. A microelectromechanical systems device fabricated according a method comprising:
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disposing within an etching chamber a substrate comprising an etchable material and disposing within the etching chamber a solid etchant, wherein the solid etchant forms a fluid etchant capable of etching the etchable material. - View Dependent Claims (25, 26, 27, 28)
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29. A method for fabricating a microelectromechanical systems device comprising:
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providing solid xenon difluoride within an etch chamber;
supporting a substrate comprising an etchable material within the etch chamber; and
etching the etchable material from the substrate with a vapor generated by the solid xenon difluoride. - View Dependent Claims (30, 31)
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32. A method for fabricating a microelectromechanical systems device comprising:
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supporting a substrate comprising an etchable material within the etch chamber; and
positioning solid xenon difluoride sufficiently proximate to the substrate such that a vapor formed by the solid xenon difluoride etches the etchable material. - View Dependent Claims (33, 34)
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Specification