Periodic patterns and technique to control misalignment between two layers

• US 20060065625A1
• Filed: 11/16/2005
• Published: 03/30/2006
• Est. Priority Date: 04/10/2001
• Status: Abandoned Application

• Current Assignee: Ibrahim Abdulhalim, Michael Faeyrman, Michael Friedmann, Mike Adel
• Original Assignee: Ibrahim Abdulhalim, Michael Faeyrman, Michael Friedmann, Mike Adel
• Inventors: Friedmann, Michael, Abdulhalim, Ibrahim, Faeyrman, Michael, Adel, Mike
• Application Number:
  US11/281,820
• Publication Number:
  US 20060065625A1
• Time in Patent Office: Days
• US Class Current: 216/59
• CPC Class Codes: G01B 11/14 for measuring distance or clearance between spaced objects or spaced apertures G01B11/26 takes precedence; rangefinders G01C3/00
• CPC Class Codes: G01B 11/26 for measuring angles or tapers; for testing the alignment of axes
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2223/54426 for alignment
• CPC Class Codes: H01L 2223/54453 for use prior to dicing
• CPC Class Codes: H01L 2223/5446 Located in scribe lines
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal.

Claims

1. A method of measuring alignment accuracy between two or more patterned layers formed on a substrate comprising,

forming test areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical instrument capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the offset between the gratings from the measurements from the optical instrument using an optical model, wherein the optical model accounts for the diffraction of the electromagnetic waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein at least one layer between the grating in layer A and the grating in layer B is opaque in the wavelength range of the optical instrument, and the presence of the grating in layer A causes a grating-shaped topography on the surface of the opaque layer.

2. A method of measuring alignment accuracy between two or more patterned layers formed on a substrate comprising,

forming test areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical instrument capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the offset between the gratings from the measurements from the optical instrument using an optical model, wherein the optical model accounts for the diffraction of the electromagnetic waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein the optical model represents the electromagnetic field in the gratings and in the layers between the gratings as a sum of more than one diffracted orders.

3. A method of measuring alignment accuracy between two or more patterned layers formed on a substrate comprising,

forming test areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical instrument capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the offset between the gratings from the measurements from the optical instrument using an optical model, wherein the optical model accounts for the diffraction of the electromagnetic waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein offset is determined by;

calculating, according to a model of a wafer sample, the optical response of the sample with the said two overlapping gratings, the model of the sample taking into account parameters of the sample including any of the overlay misalignment of layers A and B, the profiles of the grating structures, and asymmetries caused in the grating structures by manufacturing processes;

changing the parameters of the sample model to minimize the difference between the calculated and measured optical responses; and

repeating the previous two steps until the difference between the calculated and measured optical responses is sufficiently small or cannot be significantly decreased by further iterations.

4. The method of claim 3 wherein at least a portion of the calculation is done at the measurement time.

5. The method of claim 3 wherein at least a portion of the calculated optical response is retrieved from a pre-computed database.

6. The method of claim 3 wherein the calculation involves interpolating the optical response from pre-computed entries in a database.

7. A method of measuring alignment accuracy between two or more patterned layers formed on a substrate comprising,

forming test areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical instrument capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the offset between the gratings from the measurements from the optical instrument using an optical model, wherein the optical model accounts for the diffraction of the electromagnetic waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein the first and second diffraction gratings have different pitches.

8. A method of measuring alignment accuracy between two or more patterned layers formed on a substrate comprising:

forming test areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B,

observing the overlaid diffraction gratings using an optical instrument capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the offset between the gratings from the measurements from the optical instrument using an optical model, wherein the optical model accounts for the diffraction of the electromagnetic waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein at least one of the two gratings contains more than one line per pitch, the widths of the at least two lines in each pitch being substantially different from each other.

9. A method of determining a degree of registration between an upper layer and a lower layer formed on a substrate, each of said layers including a periodic structure formed thereon and arranged to at least partially overlap, said method comprising the steps of:

illuminating the layers with a probe beam of radiation;

monitoring the zeroth order light diffracted from the layers;

generating a parameterized model representing the geometry and registration of parameters of the model; and

comparing the predicted optical response with the monitored zeroth order light to determine the registration of the structures.

10. A method as recited in claim 9 wherein said predicting step is at least partially carried out in advance for a number of different parameters and wherein the corresponding responses are stored in a database for later comparison with the monitored response.

11. A method as recited in claim 9 wherein the predicting and comparing steps are repeated while changing the parameters used in the predicting step in order to cause the predicted optical response to converge with the monitored response.

12. A method as recited in claim 9 wherein said probe beam is generated from a broadband source and said monitoring step is carried out as function of wavelength.

13. An apparatus for determining overlay error between two or more patterned layers of a sample, comprising,

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating built into a patterned layer B, where layers A and B are part of the sample under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical instrument that illuminates part or all of the metrology target and that measures properties of light that has interacted with the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor which estimates the offset of the grating pair from the measured properties;

wherein the first and second diffraction gratings have different pitches.

14. An apparatus for determining overlay error between two or more patterned layers of a sample comprising:

a metrology target comprising a first diffraction grating built into a patterned layer A and second diffraction grating built into a patterned layer B, where layers A and B are part of the sample under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical instrument that illuminates part or all of the metrology target and that measures properties of light that has interacted with the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor which estimates the offset of the grating pair form the measured properties;

wherein at least one of the two gratings contains more than one line per pitch, the widths of the at least two lines in each pitch being substantially different from each other.

15. An apparatus for determining overlay error between two or more patterned layers of a sample, comprising,

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating built into a patterned layer B, where layers A and B are part of the sample under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical instrument that illuminates part or all of the metrology target and that measures properties of light that has interacted with the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor which estimates the offset of the grating pair from the measured properties;

wherein at least one other layer of material separates layers A and B at the metrology target.

16. An apparatus for determining overlay error between two or more patterned layers of a sample, comprising,

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating built into a patterned layer B, where layers A and B are part of the sample under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical instrument that illuminates part or all of the metrology target and that measures properties of light that has interacted with the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor which estimates the offset of the grating pair from the measured properties;

wherein the processor has been programmed to iteratively (i) calculate an optical response for a set of sample parameters, including overlay misalignment, (ii) compare the measured properties with the calculated optical response, and (iii) change one or more sample parameters so as to minimize the difference between the measured properties and the calculated optical response,

wherein the calculation of an optical response is according to an optical model of the sample that accounts for the diffraction of electromagnetic waves by the pair of gratings of the metrology target and the interaction of the gratings with each other'"'"'s diffracted field.

17. The apparatus of claim 16 wherein the processor has access to a pre-computed database from which at least a portion of the calculated optical response can be retrieved.

18. The apparatus of claim 17 wherein the calculation performed by the programmed processor involves interpolating the optical response from pre-computed entries in said database.

19. An apparatus for determining the overlay error comprising,

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an ellipsometer that illuminates part or all of the metrology target and that measures properties of light that has interacted with the metrology target; and

a processor which estimates the offset of the grating pair from the pair'"'"'s measured optical characteristics.

20. The method of claim 19 wherein first and second diffraction gratings have different pitches.

21. The apparatus of claim 19 wherein at least one of the two gratings contains more than one line per pitch, the widths of the at least two lines in each pitch (unit cell) being substantially different from each other.

22. The apparatus of claim 19 wherein at least one other layer of material separates layers A and B at the metrology target.

23. The apparatus of claim 19 wherein the ellipsometer measures properties of light that has interacted with the metrology target as a function of wavelength.

24. The apparatus of claim 19 wherein the processor has been programmed to iteratively (i) calculate an optical response for a set of sample parameters, including overlay misalignment, (ii) compare the measured properties with the calculated optical response, and (iii) change one or more sample parameters so as to minimize the difference between the measured properties and the calculated optical response,

wherein the calculation of an optical response is according to an optical model of the sample that accounts for the diffraction of electromagnetic waves by the pair of gratings of the metrology target and the interaction of the gratings with each other'"'"'s diffracted field.

25. The apparatus of claim 24 wherein the processor has access to a pre-computed database from which at least a portion of the calculated optical response can be retrieved.

26. The apparatus of claim 25 wherein the calculation performed by the programmed processor involves interpolating the optical response from pre-computed entries in said database.

27. The apparatus of claim 19, wherein the metrology target further includes a second pattern built into layers A and B, and wherein the optical instrument further includes a camera disposed to observe said second pattern and obtain measurements therefrom of any gross overlay errors, said processor connected to also receive said measurements from said camera.

28. The apparatus of claim 27, wherein said second pattern comprises a box-in-box pattern.

29. The apparatus of claim 27, wherein said second pattern comprises a bar-in-bar pattern.

30. A method of measuring alignment accuracy between two or more patterned layers formed on a substrate comprising,

forming test areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical instrument capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection;

determining the offset between the gratings from the measurements from the optical instrument using an optical model, wherein the optical model accounts for the diffraction of the electromagnetic waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field; and

observing at least one second test area on said substrate using a camera, the second test area having a pattern built into layers A and B for measuring any gross overlay errors, and wherein determining the offset includes using gross overlay measurements obtained from the camera;

wherein said pattern in said second area comprises a bar-in-bar pattern.

31. An apparatus for determining overlay error between two or more patterned layers of a sample, comprising.

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating built into a patterned layer B, where layers A and B are part of the sample under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical instrument that illuminates part or all of the metrology target and that measures properties of light that has interacted with the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor which estimates the offset of the grating pair from the measured properties;

wherein the metrology target further includes a second pattern built into layers A and B, and wherein the optical instrument further includes a camera disposed to observe said second pattern and obtain measurements therefrom of any gross overlay errors, said processor connected to also receive said measurements from said camera; and

wherein said second pattern comprises a bar-in-bar pattern.

32. A method of measuring misalignment between two or more patterned layers formed on a substrate comprising,

forming target areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical signal processor capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the misalignment between the gratings from the measurements from the optical signal processor using a reference signal, wherein the reference signal accounts for the diffraction of the radiation waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein at least one layer between the grating in layer A and the grating in layer B is opaque in the wavelength range of the signal processor, and the presence of the grating in layer A causes a grating-shaped pattern on the surface of the opaque layer.

33. A method of measuring misalignment between two or more patterned layers formed on a substrate comprising,

forming target areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical signal processor capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the misalignment between the gratings from the measurements from the optical signal processor using a reference signal, wherein the reference signal accounts for the diffraction of the radiation waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein the reference signal represents the radiation field in the gratings and in the layers between the gratings as a sum of more than one diffracted orders.

34. A method of measuring misalignment between two or more patterned layers formed on a substrate comprising,

forming target areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical signal processor capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the misalignment between the gratings from the measurements from the optical signal processor using a reference signal, wherein the reference signal accounts for the diffraction of the radiation waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein misalignment is determined by;

calculating, according to a reference signal of a wafer sample, the derived signal of the sample with the said two overlapping gratings, the reference signal of the sample taking into account parameters of the sample including any of the overlay misalignment of layers A and B, the profiles of the grating structures, and asymmetries caused in the grating structures by manufacturing processes;

changing the parameters of the sample reference signal to minimize the difference between the calculated and measured derived signals; and

repeating the previous two steps until the difference between the calculated and measured derived signals is sufficiently small or cannot be significantly decreased by further iterations.

35. The method of claim 34 wherein at least a portion of the calculation is done at the measurement time.

36. The method of claim 34 wherein at least a portion of the calculated derived signal is retrieved from a pre-computed database.

37. The method of claim 34 wherein the calculation involves interpolating the derived signal from pre-computed entries in a database.

38. A method of measuring misalignment between two or more patterned layers formed on a substrate comprising,

forming target areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical signal processor capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the misalignment between the gratings from the measurements from the optical signal processor using a reference signal, wherein the reference signal accounts for the diffraction of the radiation waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein the first and second diffraction gratings have different pitches.

39. A method of measuring misalignment between two or more patterned layers formed on a substrate comprising:

forming target areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B,

observing the overlaid diffraction gratings using an optical signal processor capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection; and

determining the misalignment between the gratings from the measurements from the optical signal processor using a reference signal, wherein the reference signal accounts for the diffraction of the radiation waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field;

wherein at least one of the two gratings contains more than one line per pitch, the widths of the at least two lines in each pitch being substantially different from each other.

40. A method of determining a degree of registration between an upper layer and a lower layer formed on a substrate, each of said layers including a periodic structure formed thereon and arranged to at least partially overlap, said method comprising the steps of:

illuminating the layers with a probe beam of radiation;

monitoring the zeroth order light diffracted from the layers;

generating a parameterized reference signal representing the geometry and registration of parameters of the reference signal; and

comparing the predicted derived signal with the monitored zeroth order light to determine the registration of the structures.

41. A method as recited in claim 40 wherein said predicting step is at least partially carried out in advance for a number of different parameters and wherein the corresponding responses are stored in a database for later comparison with the monitored response.

42. A method as recited in claim 40 wherein the predicting and comparing steps are repeated while changing the parameters used in the predicting step in order to cause the predicted derived signal to converge with the monitored response.

43. A method as recited in claim 40 wherein said probe beam is generated from a broadband source and said monitoring step is carried out as function of wavelength.

44. An apparatus for determining misalignment between two or more patterned layers of a wafer, comprising,

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating built into a patterned layer B, where layers A and B are part of the wafer under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical signal processor that illuminates part or all of the metrology target and that measures properties of light diffracted from the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor which estimates the misalignment of the grating pair from the measured properties;

wherein the first and second diffraction gratings have different pitches.

45. An apparatus for determining misalignment between two or more patterned layers of a wafer comprising:

a metrology target comprising a first diffraction grating built into a patterned layer A and second diffraction grating built into a patterned layer B, where layers A and B are part of the wafer under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical signal processor that illuminates part or all of the metrology target and that measures properties of light diffracted from the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor which estimates the misalignment of the grating pair form the measured properties;

wherein at least one of the two gratings contains more than one line per pitch, the widths of the at least two lines in each pitch being substantially different from each other.

46. An apparatus for determining misalignment between two or more patterned layers of a wafer, comprising,

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating built into a patterned layer B, where layers A and B are part of the wafer under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical signal processor that illuminates part or all of the metrology target and that measures properties of light diffracted from the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor which estimates the misalignment of the grating pair from the measured properties;

wherein at least one other layer of material separates layers A and B at the metrology target.

47. An apparatus for determining misalignment between two or more patterned layers of a wafer, comprising,

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating built into a patterned layer B, where layers A and B are part of the wafer under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical signal processor that illuminates part or all of the metrology target and that measures properties of light diffracted from the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor which estimates the misalignment of the grating pair from the measured properties;

wherein the processor has been programmed to repeatedly (i) calculate a derived signal for a set of parameters, including overlay misalignment, (ii) compare the measured properties with the calculated derived signal, and (iii) change one or more parameters so as to minimize the difference between the measured properties and the calculated derived signal,

wherein the calculation of a derived signal is according to a reference signal of the wafer that accounts for the diffraction of radiation waves by the pair of gratings of the metrology target and the interaction of the gratings with each other'"'"'s diffracted field.

48. The apparatus of claim 47 wherein the processor has access to a pre-computed database from which at least a portion of the calculated derived signal can be retrieved.

49. The apparatus of claim 48 wherein the calculation performed by the programmed processor involves interpolating the derived signal from pre-computed entries in said database.

50. An apparatus for determining misalignment comprising,

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical system that illuminates part or all of the metrology target and that measures properties of light diffracted from the metrology target; and

a processor which estimates the misalignment of the grating pair from the pair'"'"'s measured optical characteristics.

51. The method of claim 50 wherein first and second diffraction gratings have different pitches.

52. The apparatus of claim 50 wherein at least one of the two gratings contains more than one line per pitch, the widths of the at least two lines in each pitch (unit cell) being substantially different from each other.

53. The apparatus of claim 50 wherein at least one other layer of material separates layers A and B at the metrology target.

54. The apparatus of claim 50 wherein the optical system measures properties of light diffracted from the metrology target as a function of wavelength.

55. The apparatus of claim 50 wherein the processor has been programmed to repeatedly (i) calculate a derived signal for a set of parameters, including overlay misalignment, (ii) compare the measured properties with the calculated derived signal, and (iii) change one or more parameters so as to minimize the difference between the measured properties and the calculated derived signal,

wherein the calculation of a derived signal is according to a reference signal of the wafer that accounts for the diffraction of radiation waves by the pair of gratings of the metrology target and the interaction of the gratings with each other'"'"'s diffracted field.

56. The apparatus of claim 55 wherein the processor has access to a pre-computed database from which at least a portion of the calculated derived signal can be retrieved.

57. The apparatus of claim 56 wherein the calculation performed by the programmed processor involves interpolating the derived signal from pre-computed entries in said database.

58. The apparatus of claim 50, wherein the metrology target further includes a second pattern built into layers A and B, and wherein the optical signal processor further includes a camera disposed to observe said second pattern and obtain measurements therefrom of any gross misalignments, said processor connected to also receive said measurements from said camera.

59. The apparatus of claim 58, wherein said second pattern comprises a box-in-box pattern.

60. The apparatus of claim 58, wherein said second pattern comprises a bar-in-bar pattern.

61. A method of measuring misalignment between two or more patterned layers formed on a substrate comprising,

forming target areas as part of the patterned layers, wherein a first diffraction grating is built into a patterned layer A and a second diffraction grating is built into a patterned layer B, where layers A and B are desired to be aligned with respect to each other, zero or more layers of other materials separating layers A and B, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the surfaces of A and B;

observing the overlaid diffraction gratings using an optical signal processor capable of measuring any one or more of transmission, reflectance, or ellipsometric parameters as a function of any one or more of wavelength, polar angle of incidence, azimuthal angle of incidence, or polarization of the illumination and detection;

determining the misalignment between the gratings from the measurements from the optical signal processor using a reference signal, wherein the reference signal accounts for the diffraction of the radiation waves by the gratings and the interaction of the gratings with each other'"'"'s diffracted field; and

observing at least one second test area on said substrate using a camera, the second test area having a pattern built into layers A and B for measuring any gross misalignments, and wherein determining the misalignment includes using gross overlay measurements obtained from the camera;

wherein said pattern in said second area comprises a bar-in-bar pattern.

62. An apparatus for determining misalignment between two or more patterned layers of a wafer, comprising.

a metrology target comprising a first diffraction grating built into a patterned layer A and a second diffraction grating built into a patterned layer B, where layers A and B are part of the wafer under test and layers A and B are desired to be aligned with respect to each other, the two gratings substantially overlapping when viewed from a direction that is perpendicular to the layers A and B;

an optical signal processor that illuminates part or all of the metrology target and that measures properties of light diffracted from the metrology target as a function of any one or more of polar angle of incidence, azimuthal angle of incidence, and polarization of the illumination and detection; and

a processor Which estimates the misalignment of the grating pair from the measured properties;

wherein the metrology target further includes a second pattern built into layers A and B, and wherein the optical signal processor further includes a camera disposed to observe said second pattern and obtain measurements therefrom of any gross misalignments, said processor connected to also receive said measurements from said camera; and

wherein said second pattern comprises a bar-in-bar pattern.