Double gate device having a heterojunction source/drain and strained channel
First Claim
1. A semiconductor device, comprising:
- a semiconductor layer;
a first gate dielectric adjacent a first side of a first portion of the semiconductor layer;
a first gate electrode adjacent the first gate dielectric;
a second gate dielectric adjacent a second side of the first portion of the semiconductor layer;
a second gate electrode adjacent the second gate dielectric;
means for encapsulating at least one of (i) the first gate electrode and the first gate dielectric and (ii) the second gate electrode and the second gate dielectric;
a strained channel region having first and second heterojunctions adjacent opposite ends of the strained channel region and within the first portion of the semiconductor layer; and
a semiconductor material selectively grown overlying a second portion of the semiconductor layer outside the first portion, wherein the semiconductor material comprises a material different from a material of the semiconductor layer, and wherein the semiconductor material is used as a diffusion source by controlling an amount of diffusion of the semiconductor material into the strained channel region of the first and second portions of the semiconductor layer.
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Accused Products
Abstract
A semiconductor device (10) is formed by positioning a gate (22) overlying a semiconductor layer (16) of preferably silicon. A semiconductor material (26) of, for example only, SiGe or Ge, is formed adjacent the gate over the semiconductor layer and over source/drain regions. A thermal process diffuses the stressor material into the semiconductor layer. Lateral diffusion occurs to cause the formation of a strained channel (17) in which a stressor material layer (30) is immediately adjacent the strained channel. Extension implants create source and drain implants from a first portion of the stressor material layer. A second portion of the stressor material layer remains in the channel between the strained channel and the source and drain implants. A heterojunction is therefore formed in the strained channel. In another form, oxidation of the stressor material occurs rather than extension implants to form the strained channel.
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Citations
18 Claims
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1. A semiconductor device, comprising:
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a semiconductor layer;
a first gate dielectric adjacent a first side of a first portion of the semiconductor layer;
a first gate electrode adjacent the first gate dielectric;
a second gate dielectric adjacent a second side of the first portion of the semiconductor layer;
a second gate electrode adjacent the second gate dielectric;
means for encapsulating at least one of (i) the first gate electrode and the first gate dielectric and (ii) the second gate electrode and the second gate dielectric;
a strained channel region having first and second heterojunctions adjacent opposite ends of the strained channel region and within the first portion of the semiconductor layer; and
a semiconductor material selectively grown overlying a second portion of the semiconductor layer outside the first portion, wherein the semiconductor material comprises a material different from a material of the semiconductor layer, and wherein the semiconductor material is used as a diffusion source by controlling an amount of diffusion of the semiconductor material into the strained channel region of the first and second portions of the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor device, comprising:
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a semiconductor layer;
a first gate dielectric adjacent a first side of a first portion of the semiconductor layer;
a first gate electrode adjacent the first gate dielectric;
a second gate dielectric adjacent a second side of the first portion of the semiconductor layer;
a second gate electrode adjacent the second gate dielectric;
means for encapsulating at least one of (i) the first gate electrode and the first gate dielectric and (ii) the second gate electrode and the second gate dielectric;
a strained channel region having first and second heterojunctions adjacent opposite ends of the strained channel region and within the first portion of the semiconductor layer;
a semiconductor material selectively grown overlying a second portion of the semiconductor layer outside the first portion, wherein the semiconductor material comprises a material different from a material of the semiconductor layer, and wherein the semiconductor material is used as a diffusion source by controlling an amount of diffusion of the semiconductor material into the strained channel region of the first and second portions of the semiconductor layer;
source/drain extension regions within the semiconductor layer;
at least one sidewall spacer adjacent one or more of the first gate electrode and the second gate electrode, the at least one sidewall spacer further being disposed adjacent the source/drain extension regions; and
source/drain regions adjacent the source/drain extension regions and within the second portion of the semiconductor layer. - View Dependent Claims (17, 18)
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Specification