High frequency power amplifier circuit and electric component for high frequency power amplifier

• US 20060066398A1
• Filed: 09/16/2005
• Published: 03/30/2006
• Est. Priority Date: 09/24/2004
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Tsuchiya, Masahiro, Akamine, Hitoshi, Takahashi, Kyoichi, Koshio, Kazuhiro
• Granted Patent: US 7,271,662 B2
• Time in Patent Office: Days
• US Class Current: 330/133
• CPC Class Codes: H03F 1/30 Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in differential amplifiers H03F3/45479
• CPC Class Codes: H03F 1/32 Modifications of amplifiers to reduce non-linear distortion by negative feedback H03F1/34
• CPC Class Codes: H03F 3/191 Tuned amplifiers H03F3/193, H03F3/195 take precedence
• CPC Class Codes: H03G 1/007 using FET type devices
• CPC Class Codes: H03G 2201/103 being an amplifying element
• CPC Class Codes: H03G 2201/206 being in radio frequency
• CPC Class Codes: H03G 2201/307 being radio frequency signal
• CPC Class Codes: H03G 2201/40 Combined gain and bias control
• CPC Class Codes: H03G 3/004 Control by varying the supply voltage
• CPC Class Codes: H03G 3/3047 for intermittent signals, e.g. burst signals

Abstract

In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, this invention enables preventing waveform distortion near the peak output power level by allowing sufficient idle currents to flow through the transistors for amplification, while enhancing the power efficiency in a low output power region. The power amplifier includes a detection circuit comprising a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage conversion means which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detection and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.

Claims

1. A semiconductor integrated circuit for high frequency power amplifier comprising:

a power amplifier circuit including two or more transistors for amplification connected in cascade to amplify a high frequency signal to be transmit;

a detection circuit which detects an input signal to a last-stage transistor of the power amplifier circuit, generates a voltage corresponding to the amplitude of the input signal, and supplies the voltage to a control terminal of the last-stage transistor; and

a bias circuit which generates bias voltages to set desired idle currents to flow through the transistors for amplification respectively,

wherein the last-stage transistor and elements constituting the detection circuit are formed on a same semiconductor substrate, and the detection circuit receives the bias voltage which is given to the last-stage transistor and an AC component of the input signal, generates a voltage corresponding to the level of the bias voltage and the AC signal level, and supplies the voltage to the control terminal of the last-stage transistor.

2. The semiconductor integrated circuit for high frequency power amplifier according to claim 1,

wherein the AC component of the input signal is detected by a capacitor element, one terminal of which is connected to a signal line through which signals are carried from the output terminal of the preceding-stage transistor of the power amplifier circuit to the control terminal of the last-stage transistor of the power amplifier circuit, and input to the detection circuit.

3. The semiconductor integrated circuit for high frequency power amplifier according to claim 1,

wherein the detection circuit comprises:

a first transistor which receives the AC component of output from a preceding-stage transistor of the power amplifier circuit and a voltage from the bias circuit at a control terminal of the first transistor;

a second transistor connected in series to the first transistor;

a third transistor which forms a current mirror circuit with the second transistor; and

a current-voltage conversion means which converts current flowing through the third transistor into a voltage for output.

4. The semiconductor integrated circuit for high frequency power amplifier according to claim 3,

wherein the bias circuit includes a transistor whose control terminal and the control terminal of the first transistor are coupled, and a voltage which is outputted from the transistor is supplied to the control terminal of the first transistor for setting an operating point of the detection circuit.

10. An electronic component for high frequency power amplifier comprising:

the semiconductor integrated circuit for high frequency power amplifier as recited in claim 1;

an AC component detection means for detecting the AC component of an output of the power amplifier circuit, arranged on the output line of the power amplifier circuit;

capacitor elements which cut off the DC component of the output of the power amplifier circuit and is arranged on the output line; and

an impedance matching circuit arranged on the output line,

wherein the semiconductor integrated circuit, the AC component extraction means, the capacitor elements, and the impedance matching circuit are installed over a single insulating substrate.

5. A semiconductor integrated circuit for high frequency power amplifier comprising:

a power amplifier circuit including two ore more transistors for amplification connected in cascade to amplify a high frequency signal to be transmit; and

a nonlinear amplifier circuit which makes flow an operating current in accordance with a predetermined bias voltage and in which output of a preceding-stage transistor of the power amplifier circuit is inputted,

wherein the nonlinear amplifier circuit generates a voltage in accordance with a magnitude of the operating current and a magnitude of the output of the preceding-stage transistor and supplies the voltage to the control terminal of the last-stage transistor of the power amplifier circuit.

6. The semiconductor integrated circuit for high frequency power amplifier according to claim 5, further comprising:

a bias circuit which generates bias voltages to set desired idle currents to flow through the two or more transistors of the power amplifier circuit respectively,

wherein a bias voltage of one of the bias voltages that is given to allow a desired idle current to flow through the last stage transistor of the power amplifier circuit is applied to the nonlinear amplifier circuit, causing the operating current corresponding to the bias voltage to flow in the nonlinear amplifier circuit.

7. The semiconductor integrated circuit for high frequency power amplifier according to claim 5,

wherein a signal detected by a capacitor element, one terminal of which is connected to a signal line through which signals are carried from the output terminal of a preceding-stage transistor of the power amplifier circuit to the control terminal of the last-stage transistor is input to the nonlinear amplifier circuit.

8. The semiconductor integrated circuit for high frequency power amplifier according to claim 5,

wherein the nonlinear amplifier circuit comprises:

a first transistor which receives an AC signal component output from a preceding-stage transistor the power amplifier circuit and a voltage from a bias circuit at a control terminal of the first transistor;

a second transistor connected in series to the first transistor;

a third transistor which forms a current mirror circuit with the second transistor; and

a current-voltage conversion means which converts current flowing through the third transistor into a voltage for output.

9. The semiconductor integrated circuit for high frequency power amplifier according to claim 8,

wherein the bias circuit includes a transistor whose control terminal and the control terminal of the first transistor are coupled, and a voltage which is outputted from the transistor is supplied to the control terminal of the first transistor for setting an operating point of the detection circuit.