Semiconductor device and method of manufacture thereof

• US 20060067059A1
• Filed: 04/20/2005
• Published: 03/30/2006
• Est. Priority Date: 09/28/2004
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation), Renesas Device Design Corp. (Renesas Electronics Corporation)
• Inventors: Miyamoto, Noboru, Ushijima, Koichi, Hassan, Hussein Khalid
• Granted Patent: US 7,436,672 B2
• Time in Patent Office: Days
• US Class Current: 361/715
• CPC Class Codes: H01L 25/162 the devices being mounted on two or more different substrates
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 7/1432 specially adapted for power drive units or power converters
• CPC Class Codes: H05K 7/14322 wherein the control and power circuits of a power converter are arranged within the same casing

Abstract

A transfer mold type power module (“TPM”) is provided with a projection at each of the four corners on its front main surface. The TPM is also provided a first screw hole at its center. A shielding plate is provided with a second crew hole in a position that corresponds to the first screw hole. A control substrate is provided with third screw holes in positions that correspond to the projections. The shielding plate and the TPM are joined by putting a first screw through the first and second screw holes and temporarily fastening the tip of the first screw by a temporary fastening member at the rear main surface of the TPM. The control substrate and the TPM are joined by second screws via the third screw holes.

Claims

1. A semiconductor device comprising:

a power module in which a power semiconductor element is sealed with resin by the transfer molding method;

a control substrate for controlling said power module; and

a shielding plate provided on a front main surface of said power module, wherein

said power module includes a structure for mounting said control substrate, said control substrate being mounted over said shielding plate via said structure.

2. The semiconductor device according to claim 1, wherein

said power module includes projections formed on said front main surface thereof,

said control substrate is joined to said projections, and

said shielding plate and said power module include holes communicating therethrough, said shielding plate being joined to said power module by a screw fit in said holes.

3. The semiconductor device according to claim 2, further comprising a temporary fastening member for temporarily fastening said screw at a rear main surface of said power module.

4. The semiconductor device according to claim 3, wherein said power module includes engagement parts on its side surfaces, so that side surfaces of a plurality of said power modules can be engaged via said engagement parts.

5. The semiconductor device according to claim 4, further comprising a plurality of said power modules, said plurality of said power modules being continuously engaged by said engagement parts.

6. The semiconductor device according to claim 5, further comprising a bus bar electrode for connection to electrode terminals of said power module, wherein

said bus bar electrode includes external electrode terminals for connection to peripheral components and module side electrode terminals for connection to said electrode terminals, and

said module said electrode terminals are located in symmetry with respect to said external electrode terminals.

7. The semiconductor device according to claim 6, wherein

said bus bar electrode includes a plurality of partial bus bar electrodes, and

said partial bus bar electrodes are joined to insulating films interposed therebetween.

8. The semiconductor device according to claim 1, wherein

said power module further includes a bus bar electrode connected to said power semiconductor element, and

said power semiconductor element and said bus bar electrode are sealed together with resin.

9. The semiconductor device according to claim 8, wherein

said power module further includes peripheral components connected to said bus bar electrode, and

said power semiconductor element, said bus bar electrode, and said peripheral components are sealed together with resin.

10. The semiconductor device according to claim 1, further comprising a cooling fin provided on said rear main surface of said power module.

11. A method of manufacturing the semiconductor device recited in claim 1, comprising the steps of:

(a) mounting said shielding plate on said power module;

(b) mounting said control substrate on said power module; and

(c) conducting a function test on said power module with said shielding plate and said control substrate being mounted thereon.

12. The method of manufacturing the semiconductor device according to claim 11, further comprising the step of mounting said cooling fin after said step (c).

13. A method of manufacturing the semiconductor device recited in claim 3, comprising the steps of:

removing said temporary fastening member; and

mounting a cooling fin by said screw fit in said holes.