Deposition of ruthenium metal layers in a thermal chemical vapor deposition process

• US 20060068098A1
• Filed: 09/27/2004
• Published: 03/30/2006
• Est. Priority Date: 09/27/2004
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Yamasaki, Hideaki, Leusink, Gert J., Kawano, Yumiko
• Application Number:
  US10/949,803
• Publication Number:
  US 20060068098A1
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76873 for electroplating

Abstract

A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process. In one embodiment of the invention, the ruthenium-carbonyl precursor can contain Ru₃(CO)₁₂. and the Ru metal layer can be deposited at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.

Claims

1. A method of depositing a Ru metal layer on a substrate, the method comprising:

providing a substrate in a process chamber;

introducing a process gas in the process chamber, the process gas comprising a carrier gas, a ruthenium-carbonyl precursor, and hydrogen gas; and

depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process.

2. The method according to claim 1, wherein the depositing is conducted at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.

3. The method according to claim 2, wherein the depositing is conducted at a substrate temperature resulting in the Ru metal layer having a Ru(002)/Ru(101) XRD ratio greater than about 3.

4. The method according to claim 2, wherein the depositing is conducted at a substrate temperature resulting in the Ru metal layer having a Ru(002)/Ru(101) XRD ratio greater than about 20.

5. The method according to claim 1, wherein a substrate temperature is between about 300°

C. and about 600°

C.

6. The method according to claim 1, wherein a substrate temperature is between about 350°

C. and about 500°

C.

7. The method according to claim 1, wherein the ruthenium-carbonyl precursor comprises Ru₃(CO)₁₂.

8. The method according to claim 1, wherein a carrier gas flow is between about 100 sccm and about 5,000 sccm.

9. The method according to claim 1, wherein a carrier gas flow is between about 500 sccm and about 2000 sccm.

10. The method according to claim 1, wherein the carrier gas comprises Ar, He, Ne, Kr, Xe, or N₂, or a combination of two or more thereof.

11. The method according to claim 1, wherein a hydrogen gas flow rate is between about 10 sccm and about 1000 sccm.

12. The method according to claim 1, wherein a hydrogen gas flow rate is between about 100 sccm and about 500 sccm.

13. The method according to claim 1, wherein the process gas further comprises a dilution gas.

14. The method according to claim 13, wherein the dilution gas comprises Ar, He, Ne, Kr, Xe, or N₂, or a combination of two or more thereof.

15. The method according to claim 1, wherein the substrate comprises at least one of a semiconductor substrate, a LCD substrate, a glass substrate, or a combination of two or more thereof.

16. The method according to claim 1, wherein a thickness of the Ru metal layer is less than about 300 Å

.

17. The method according to claim 1, wherein a thickness of the Ru metal layer is less than about 200 Å

.

18. The method according to claim 1, wherein a thickness of the Ru metal layer is less than about 100 Å

.

28. The method according to claim 1, wherein the carrier gas comprises Ar, He, Ne, Kr, Xe, or N₂, or a combination of two or more thereof.

19. A method of depositing a Ru metal layer on a patterned substrate, the method comprising:

providing a patterned substrate in a process chamber, the patterned substrate containing one or more vias, trenches or combinations thereof;

introducing a process gas in the process chamber, the process gas comprising a carrier gas, a ruthenium-carbonyl precursor, and hydrogen gas; and

depositing a Ru metal layer on the patterned substrate by a thermal chemical vapor deposition process.

20. The method according to claim 19, wherein the depositing is conducted at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.

21. The method according to claim 19, wherein the depositing is conducted at a substrate temperature resulting in the Ru metal layer having a Ru(002)/Ru(101) XRD ratio greater than about 3.

22. The method according to claim 19, wherein the depositing is conducted at a substrate temperature resulting in the Ru metal layer having a Ru(002)/Ru(101) XRD ratio greater than about 20.

23. The method according to claim 19, wherein a substrate temperature is between about 300°

C. and about 600°

C.

24. The method according to claim 19, wherein a substrate temperature is between about 350°

C. and about 500°

C.

25. The method according to claim 19, wherein the ruthenium-carbonyl precursor comprises Ru₃(CO)₁₂.

26. The method according to claim 19, wherein a carrier gas flow is between about 100 sccm and about 5,000 sccm.

27. The method according to claim 19, wherein a carrier gas flow is between about 500 sccm and about 2000 sccm.

29. The method according to claim 19, wherein a hydrogen gas flow rate is between about 10 sccm and about 1000 sccm.

30. The method according to claim 19, wherein a hydrogen gas flow rate is between about 100 sccm and about 500 sccm.

31. The method according to claim 19, wherein the process gas further comprises a dilution gas.

32. The method according to claim 31, wherein the dilution gas comprises Ar, He, Ne, Kr, Xe, or N₂, or a combination of two or more thereof.

33. The method according to claim 19, wherein the substrate comprises at least one of a semiconductor substrate, a LCD substrate, a glass substrate, or a combination of two or more thereof.

34. The method according to claim 19, wherein a thickness of the Ru metal layer is less than about 300 Å

.

35. The method according to claim 19, wherein a thickness of the Ru metal layer is less than about 200 Å

.

36. The method according to claim 19, wherein a thickness of the Ru metal layer is less than about 100 Å

.

37. The method according to claim 19, wherein the patterned substrate further comprises a barrier layer and the depositing comprises depositing the Ru metal layer on the barrier layer

38. The method according to claim 37, wherein the barrier layer comprises W.