Please download the dossier by clicking on the dossier button x
×

Methods of forming a thin layer for a semiconductor device and apparatus for performing the same

  • US 20060068599A1
  • Filed: 09/06/2005
  • Published: 03/30/2006
  • Est. Priority Date: 09/07/2004
  • Status: Abandoned Application
First Claim
Patent Images

1. A method of forming a thin layer for a semiconductor device, comprising:

  • forming a recessed portion on an object; and

    forming an insulation layer on the object by reacting a water vapor, an oxygen gas comprising an oxygen radical and an organic silicon source gas with each other, so that the recessed portion is filled with the insulation layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×