Methods of forming a thin layer for a semiconductor device and apparatus for performing the same

• US 20060068599A1
• Filed: 09/06/2005
• Published: 03/30/2006
• Est. Priority Date: 09/07/2004
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Na, Kyu-Tae, Baek, Eun-Kyung, Rha, Sang-Ho
• Application Number:
  US11/219,972
• Publication Number:
  US 20060068599A1
• Time in Patent Office: Days
• US Class Current: 438/758
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02214 the compound comprising silicon and oxygen
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/02255 formation by thermal treatment H01L21/02252 takes precedence; after treatment of an insulating film H01L21/3105 and subgroups
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31612 on a silicon body

Abstract

The present invention can provide methods of forming a thin layer for a semiconductor device. The methods can include forming a recessed portion on an object, and forming an insulation layer on the object by reacting a water vapor, an oxygen gas including an oxygen radical and an organic silicon source gas with each other, so that the recessed portion is filled with the insulation layer. Accordingly, a flow characteristic of the insulation layer can be improved, so that a seam defect can be sufficiently decreased in the insulation layer. The present invention can further provide apparatus for forming a thin layer.

Claims

1. A method of forming a thin layer for a semiconductor device, comprising:

forming a recessed portion on an object; and

forming an insulation layer on the object by reacting a water vapor, an oxygen gas comprising an oxygen radical and an organic silicon source gas with each other, so that the recessed portion is filled with the insulation layer.

2. The method of claim 1, wherein the organic silicon source gas comprises a tetra ethoxy silane (Si(OC₂H₅)₄) gas, a tetra methoxy silane (Si(OCH₃)₄) gas, a tetra isopropoxy silane (Si(i-OC₃H₇)₄) gas, a tetra tertiary butoxy silane (Si(t-OC₄H₉)₄) gas or a combination thereof.

3. The method of claim 1, wherein the water vapor is produced by chemically reacting a hydrogen gas with an oxygen gas.

4. The method of claim 1, wherein the water vapor is supplied at a flow rate ratio of about 40 to about 75 with respect to the organic silicon gas, and the oxygen gas comprising the oxygen radical is supplied at a flow rate ratio of about 75 to about 170 with respect to the organic silicon gas during formation of the insulation layer.

5. The method of claim 1, wherein the insulation layer is formed at a pressure lower than an atmospheric pressure.

6. The method of claim 1, wherein the insulation layer is formed at a temperature in a range of about 25°

C. to about 550°

C.

7. The method of claim 1, wherein the object comprises a semiconductor substrate.

8. The method of claim 7, wherein the recessed portion comprises a trench on the semiconductor substrate.

9. The method of claim 1, wherein the object comprises one of a thin layer and a conductive structure on a semiconductor substrate, and the recessed portion comprises one of a via-hole or a contact hole penetrating the thin layer and a gap between the conductive structures.

18. The method of claim 8, wherein the object comprises one of a thin layer and a conductive structure on a semiconductor substrate, and the recessed portion comprises one of a via-hole or a contact hole penetrating the thin layer and a gap between the conductive structures.

10. A method of forming a thin layer for a semiconductor device, comprising:

forming a recessed portion on an object;

forming a first insulation layer on the object and inner surfaces of the recessed portion by reacting an organic silicon source gas with an ozone gas, so that a size of the recessed portion is reduced, thereby forming a reduced recess; and

forming a second insulation layer on the first insulation layer by reacting a water vapor, an oxygen gas comprising an oxygen radical and an organic silicon source gas with each other, so that the reduced recess is filled with the second insulation layer.

11. The method of claim 10, wherein the organic silicon source gas comprises a tetra ethoxy silane (Si(OC₂H₅)₄) gas, a tetra methoxy silane (Si(OCH₃)₄) gas, a tetra isopropoxy silane (Si(i-OC₃H₇)₄) gas, a tetra tertiary butoxy silane (Si(t-OC₄H₉)₄) gas or a combination thereof.

12. The method of claim 10, wherein the water vapor is produced by chemically reacting a hydrogen gas with an oxygen gas.

13. The method of claim 10, wherein the water vapor is supplied at a flow rate ratio of about 40 to about 75 with respect to the organic silicon gas, and the oxygen gas comprising the oxygen radical is supplied at a flow rate ratio of about 75 to about 170 with respect to the organic silicon gas during formation of the insulation layer.

14. The method of claim 10, wherein the insulation layer is formed at a pressure lower than an atmospheric pressure.

15. The method of claim 10, wherein the insulation layer is formed at a temperature in a range of about 25°

C. to about 550°

C.

16. The method of claim 10, wherein the object comprises a semiconductor substrate.

17. The method of claim 16, wherein the recessed portion comprises a trench on a semiconductor substrate.

19. An apparatus for forming a thin layer for a semiconductor device, comprising:

a processing chamber into which an object comprising a recessed portion is loaded, an insulation layer being formed on the object and the recessed portion being filled with the insulation layer in the processing chamber;

a first gas supplier for supplying a water vapor into the processing chamber;

a second gas supplier for supplying an oxygen gas comprising an oxygen radical into the processing chamber; and

a third gas supplier for supplying an organic silicon source gas into the processing chamber.

20. The apparatus of claim 19, wherein the first gas supplier comprises:

a water vapor generator for generating the water vapor by chemically reacting an oxygen gas with a hydrogen gas;

at least one supplying line for supplying the hydrogen gas and the oxygen gas into the water vapor generator;

at least one exhausting line connected between the water vapor generator and the processing chamber, the water vapor being supplied from the water vapor generator into the processing chamber through the exhausting line; and

a flow rate controller positioned on the supplying line, thereby controlling a flow rate of the hydrogen gas and the oxygen gas.

21. The apparatus of claim 19, further comprising a central controller for transferring a control signal to each of the first, second and third gas suppliers, so that the water vapor, the oxygen gas comprising the oxygen radical and the organic silicon source gas are supplied into the processing chamber at a predetermined flow rate ratio.

22. The apparatus of claim 19, further comprising pressure regulator and/or heater.

23. The apparatus of claim 19, further comprising a pressure regulator connected to the processing chamber, the pressure regulator maintaining an internal pressure of the processing chamber to be lower than about 760 Torr.

24. The apparatus of claim 19, further comprising a heater for heating the object to a temperature of about 25°

C. to about 550°

C.

25. The apparatus of claim 19, wherein the second gas supplier comprises an ozone generator for generating the ozone radical.

26. The apparatus of claim 24, wherein the ozone generator comprises a remote plasma system.

27. The apparatus of claim 19, further comprising a fourth gas supplier for additionally supplying the oxygen gas comprising the oxygen radical into the processing chamber.

28. The method of claim 26, wherein the fourth gas supplier comprises a remote plasma system for generating the ozone radical.