Semiconductor device and method of manufacturing the same

• US 20060071215A1
• Filed: 10/03/2005
• Published: 04/06/2006
• Est. Priority Date: 09/06/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isobe, Atsuo, Takayama, Toru, Arao, Tatsuya
• Granted Patent: US 7,405,132 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.

Claims

1-56. -56. (canceled)

57. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a metal substrate;

forming a semiconductor layer over the first insulating film;

forming a second insulating film over the semiconductor layer;

forming a gate electrode over the second insulating film;

forming a third insulating film over the gate electrode;

partly removing the second insulating film and the third insulating film so as to expose a portion of the first insulating film; and

forming a wiring line electrically connected to the semiconductor layer and in contact with the portion of said first insulating film.

58. A method of manufacturing a semiconductor device according to claim 57, wherein a surface of the metal substrate has a roughness of at most 1 μ

mR_MAX.

59. A method of manufacturing a semiconductor device according to claim 57, wherein a radius of curvature of a convex part which exists in a surface of the metal substrate is at least 1 μ

m.

60. A method of manufacturing a semiconductor device according to claim 57, wherein the metal substrate comprises a stainless substrate and a substrate formed with a conductive film which is a silicon film having conductivity, a metal film, a silicide film, or a nitride film.

61. A method of manufacturing a semiconductor device according to claim 57, wherein the semiconductor device is a liquid crystal display device.

62. A method of manufacturing a semiconductor device according to claim 57, wherein the semiconductor device is a light emitting device.

63. A method of manufacturing a semiconductor device according to claim 57, wherein the semiconductor device is one selected from the group consisting of a display, a portable telephone, a video camera, a digital camera, a goggle type display, a car navigation system, a car stereo, a personal computer, a DVD player, an electronic book, and a portable information terminal.

85. A method of manufacturing a semiconductor device according to claim 57, wherein the third insulating film has an uneven surface.

64. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a metal substrate;

forming a semiconductor layer over the first insulating film;

forming a second insulating film over the semiconductor layer;

forming a gate electrode over the second insulating film;

forming a third insulating film over the semiconductor layer and the gate electrode;

partly removing the second insulating film and the third insulating film so as to expose a portion of the first insulating film;

forming a contact hole in the second insulating film and the third insulating film and forming a wiring line electrically connected to the semiconductor layer through the contact hole and in contact with the portion of said first insulating film.

65. A method of manufacturing a semiconductor device according to claim 64, wherein a surface of the metal substrate has a roughness of at most 1 μ

mR_MAX.

66. A method of manufacturing a semiconductor device according to claim 64, wherein a radius of curvature of a convex part which exists in a surface of the metal substrate is at least 1 μ

m.

67. A method of manufacturing a semiconductor device according to claim 64, wherein the metal substrate comprises a stainless substrate and a substrate formed with a conductive film which is a silicon film having conductivity, a metal film, a silicide film, or a nitride film.

68. A method of manufacturing a semiconductor device according to claim 64, wherein the semiconductor device is a liquid crystal display device.

69. A method of manufacturing a semiconductor device according to claim 64, wherein the semiconductor device is a light emitting device.

70. A method of manufacturing a semiconductor device according to claim 64, wherein the semiconductor device is one selected from the group consisting of a display, a portable telephone, a video camera, a digital camera, a goggle type display, a car navigation system, a car stereo, a personal computer, a DVD player, an electronic book, and a portable information terminal.

86. A method of manufacturing a semiconductor device according to claim 64, wherein the third insulating film has an uneven surface.

71. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a metal substrate;

forming a semiconductor layer over the first insulating film;

forming a second insulating film over the semiconductor layer;

forming a gate electrode over the second insulating film;

forming a third insulating film over the gate electrode;

partly removing the second insulating film and the third insulating film so as to expose a portion of the first insulating film;

forming a first wiring line electrically connected to the semiconductor layer and in contact with the portion of said first insulating film,

forming a fourth insulating film over the first wiring line;

partly removing the fourth insulating film so as to expose a portion of the first wiring line; and

forming a second wiring line electrically connected to the first wiring line.

72. A method of manufacturing a semiconductor device according to claim 71, wherein a surface of the metal substrate has a roughness of at most 1 μ

mR_MAX.

73. A method of manufacturing a semiconductor device according to claim 71, wherein a radius of curvature of a convex part which exists in a surface of the metal substrate is at least 1 μ

m.

74. A method of manufacturing a semiconductor device according to claim 71, wherein the metal substrate comprises a stainless substrate and a substrate formed with a conductive film which is a silicon film having conductivity, a metal film, a silicide film, or a nitride film.

75. A method of manufacturing a semiconductor device according to claim 71, wherein the semiconductor device is a liquid crystal display device.

76. A method of manufacturing a semiconductor device according to claim 71, wherein the semiconductor device is a light emitting device.

77. A method of manufacturing a semiconductor device according to claim 71, wherein the semiconductor device is one selected from the group consisting of a display, a portable telephone, a video camera, a digital camera, a goggle type display, a car navigation system, a car stereo, a personal computer, a DVD player, an electronic book, and a portable information terminal.

87. A method of manufacturing a semiconductor device according to claim 71, wherein the third insulating film has an uneven surface.

78. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a metal substrate;

forming a semiconductor layer over the first insulating film;

forming a second insulating film over the semiconductor layer;

forming a gate electrode over the second insulating film;

forming a third insulating film over the gate electrode;

partly removing the second insulating film and the third insulating film so as to expose a portion of the first insulating film;

forming a contact hole in the second insulating film and the third insulating film and

forming a first wiring line electrically connected to the semiconductor layer through the contact hole and in contact with the portion of said first insulating film;

forming a fourth insulating film over the first wiring line;

partly removing the fourth insulating film so as to expose a portion of the first wiring line; and

forming a second wiring line electrically connected to the first wiring line.

79. A method of manufacturing a semiconductor device according to claim 78, wherein a surface of the metal substrate has a roughness of at most 1 μ

mR_MAX.

80. A method of manufacturing a semiconductor device according to claim 78, wherein a radius of curvature of a convex part which exists in a surface of the metal substrate is at least 1 μ

m.

81. A method of manufacturing a semiconductor device according to claim 78, wherein the metal substrate comprises a stainless substrate and a substrate formed with a conductive film which is a silicon film having conductivity, a metal film, a silicide film, or a nitride film.

82. A method of manufacturing a semiconductor device according to claim 78, wherein the semiconductor device is a liquid crystal display device.

83. A method of manufacturing a semiconductor device according to claim 78, wherein the semiconductor device is a light emitting device.

84. A method of manufacturing a semiconductor device according to claim 78, wherein the semiconductor device is one selected from the group consisting of a display, a portable telephone, a video camera, a digital camera, a goggle type display, a car navigation system, a car stereo, a personal computer, a DVD player, an electronic book, and a portable information terminal.

88. A method of manufacturing a semiconductor device according to claim 78, wherein the third insulating film has an uneven surface.

89. A method of manufacturing a semiconductor device comprising:

flattening a surface of a metal substrate;

forming a first insulating film over the metal substrate;

forming a semiconductor layer over the first insulating film;

forming a second insulating film over the semiconductor layer;

forming a gate electrode over the second insulating film;

forming a third insulating film over the gate electrode;

forming a wiring line over the third insulating film wherein the wiring line is electrically connected to the semiconductor layer,

wherein surface roughness per square mm of the metal substrate has at least 1 μ

m.

90. A method of manufacturing a semiconductor device according to claim 89, wherein the surface of the metal substrate is polished by chemical mechanical polishing.

91. A method of manufacturing a semiconductor device according to claim 89, further comprising:

partly removing the second insulating film and the third insulating film so as to expose a portion of the first insulating film,

wherein a portion of the wiring line is in contact with the portion of the first insulating film, and

wherein the portion of the wiring line, the portion of the first insulating film and the metal substrate comprise a storage capacitor.