Method of fabricating vertical structure LEDs
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Accused Products
Abstract
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.
75 Citations
92 Claims
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1-42. -42. (canceled)
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43. A vertical light emitting device, comprising:
a metallic support layer;
a first GaN-based layer formed adjacent to the metallic support layer;
a second GaN-based layer; and
a light emitting layer disposed between the first and second GaN-based layers. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
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60. A vertical light emitting device, comprising:
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a support layer;
a first GaN-based layer;
a first electrode disposed between the support layer and the first GaN-based layer;
a second GaN-based layer;
a light emitting layer disposed between the first and second GaN-based layers; and
a second electrode formed on the second GaN-based layer. - View Dependent Claims (61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72)
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73. A vertical light emitting device, comprising:
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a plurality of adjacent semiconductor layers;
a first electrode formed on one side of the plurality of semiconductor layers;
a support layer formed over the first electrode; and
a second electrode formed on the other side of the plurality of semiconductor layers. - View Dependent Claims (74, 75, 76, 77, 78, 79, 80)
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81. A vertical light emitting device, comprising:
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a plurality of individual semiconductor devices formed by forming trenches through a plurality of semiconductor layers;
a first electrode formed on each semiconductor device;
a support layer formed over the first electrode; and
a second electrode formed on each semiconductor device. - View Dependent Claims (82)
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83. A vertical light emitting device, comprising:
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a light emitting diode comprising a first GaN-based layer, a second GaN-based layer, and an active layer disposed between the first and second GaN-based layers;
a first electrode formed on the light emitting diode;
a support layer formed over the first electrode; and
a second electrode formed on the light emitting diode. - View Dependent Claims (84, 85, 86, 87, 88, 89, 90, 91)
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92. A vertical light emitting device, comprising:
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a plurality of light emitting diodes, each light emitting diode comprising a first GaN-based layer, a second GaN-based layer, and an active layer disposed between the first and second GaN-based layers;
a first electrode formed on each light emitting diode;
a support layer formed over the first electrode; and
a second electrode formed on each light emitting diode.
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Specification