Dielectric barrier layer films

• US 20060071592A1
• Filed: 09/16/2005
• Published: 04/06/2006
• Est. Priority Date: 02/27/2003
• Status: Active Grant

• Current Assignee: Demaray LLC
• Original Assignee: Symmorphix, Inc. (Demaray LLC)
• Inventors: Demaray, Richard E., Brooks, Peter, Narasimhan, Mukundan
• Granted Patent: US 7,262,131 B2
• Time in Patent Office: Days
• US Class Current: 313/506
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H01L 21/02145 the material containing aluminium, e.g. AlSiOx
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02192 the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
• CPC Class Codes: H01L 21/02194 the material containing more than one metal element
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02266 deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31616 Deposition of Al2O3
• CPC Class Codes: H01L 21/31637 Deposition of Tantalum oxides, e.g. Ta2O5
• CPC Class Codes: H01L 21/31691 with perovskite structure
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 50/852 comprising a resonant cavity structure, e.g. Bragg reflector pair
• CPC Class Codes: Y10S 438/958 : Passivation layer

Abstract

In accordance with the present invention, a dielectric barrier layer is presented. A barrier layer according to the present invention includes a densified amorphous dielectric layer deposited on a substrate by pulsed-DC, substrate biased physical vapor deposition, wherein the densified amorphous dielectric layer is a barrier layer. A method of forming a barrier layer according to the present inventions includes providing a substrate and depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-dc, biased, wide target physical vapor deposition process. Further, the process can include performing a soft-metal breath treatment on the substrate. Such barrier layers can be utilized as electrical layers, optical layers, immunological layers, or tribological layers.

Claims

1-39. -39. (canceled)

40. A method of forming a barrier layer, comprising:

providing a substrate;

depositing a highly densified, amorphous, dielectric material over the substrate in a pulsed-DC, biased, wide target physical vapor deposition process.

41. The method of claim 40, further including

performing a soft-metal breath treatment on the substrate.

42. The method of claim 40, wherein the dielectric material is formed from a target comprising 92% Al and 8% Si.

43. The method of claim 40, wherein the dielectric material is formed from a target comprising of Titanium.

44. The method of claim 40, wherein the dielectric material is formed from a target material comprising materials chosen from a group consisting of Mg, Ta, Ti, Al, Y, Zr, Si, Hf, Ba, Sr, Nb, and combinations thereof.

45. The method of claim 41, wherein the soft-metal breath treatment is an indium/tin breath treatment.