Semiconductor device with temperature sensor

• US 20060071700A1
• Filed: 09/30/2005
• Published: 04/06/2006
• Est. Priority Date: 09/30/2004
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Meyer, Thorsten, Krischke, Norbert, Zundel, Markus
• Granted Patent: US 7,307,328 B2
• Time in Patent Office: Days
• US Class Current: 327/512
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 27/0705 comprising components of the field effect type
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in the semiconductor body. The temperature sensor has a MOS transistor and a bipolar transistor. The MOS transistor is integrated into the semiconductor body nd configured such that the substhreshold current intensity of the MOS transistor is proportional to the temperature to be measured. The subthreshold current of the MOS transistor is amplified by the bipolar transistor.

Claims

1. A semiconductor device, comprising:

a semiconductor body; and

a temperature sensor integrated in the semiconductor body, for measuring the temperature in the semiconductor body, wherein the temperature sensor has a MOS transistor and a bipolar transistor, the MOS transistor being integrated into the semiconductor body such that a subthreshold current intensity of the MOS transistor rises or falls when there is a change in the temperature to be measured, and the MOS transistor is connected to the bipolar transistor such that the subthreshold current of the MOS transistor is amplified by the bipolar transistor.

2. The semiconductor device of claim 1, comprising wherein the MOS transistor integrated into the semiconductor body is configured such that the subthreshold current rises or falls exponentially when there is a change in the temperature to be measured.

3. The semiconductor device of claim 1, comprising wherein a base of the bipolar transistor constitutes a drain region of the MOS transistor.

4. The semiconductor device of claim 3, comprising wherein the base of the bipolar transistor is configured as a floating base.

5. The semiconductor device of claim 1, comprising wherein the MOS transistor is embodied as a trench transistor.

6. The semiconductor device of claim 5, comprising wherein the trench transistor has a plurality of source regions, body regions, drain regions and gate electrodes provided in trenches, and configured via the gate electrodes to generate current flows between the source regions and the drain regions through the body regions.

7. The semiconductor device of claim 6, comprising wherein the drain regions form the base of the bipolar transistor.

8. A semiconductor device, comprising:

a semiconductor body; and

a temperature sensor integrated in the semiconductor body, wherein the temperature sensor comprises;

a MOS transistor; and

a bipolar transistor, the MOS transistor configured such that a subthreshold current intensity of the MOS transistor rises or falls when there is a measureable change in the temperature of the semiconductor body, and the MOS transistor is further configured such that the subthreshold current of the MOS transistor is amplified by the bipolar transistor.

9. The semiconductor device of claim 8, comprising wherein the MOS transistor integrated into the semiconductor body is configured such that the subthreshold current rises or falls exponentially when there is a change in the temperature to be measured.

10. The semiconductor device of claim 8, comprising wherein a base of the bipolar transistor constitutes a drain region of the MOS transistor.

11. The semiconductor device of claim 10, comprising wherein the base of the bipolar transistor is configured as a floating base.

12. The semiconductor device of claim 8, comprising wherein the MOS transistor is embodied as a trench transistor.

13. The semiconductor device of claim 12, comprising wherein the trench transistor has a plurality of source regions, body regions, drain regions and gate electrodes provided in trenches, and configured via the gate electrodes to generate current flows between the source regions and the drain regions through the body regions.

14. The semiconductor device of claim 13, comprising wherein the drain regions form the base of the bipolar transistor.

15. A semiconductor device comprising:

a semiconductor body; and

a temperature sensor integrated in the semiconductor body for measuring a temperature in the semiconductor body, wherein the temperature sensor includes a MOS transistor having a subthreshold current, wherein the subthreshold current intensity corresponds to the temperature of the semiconductor body.

16. The semiconductor device of claim 15, comprising wherein the temperature sensor includes a bipolar transistor, configured such that the bipolar transistor amplifies the subthreshold current of the MOS transistor.

17. The semiconductor device of claim 16, comprising wherein the MOS transistor is configured such that the subthreshold current intensity rises or falls when there is a change in temperature of the semiconductor body.

18. The semiconductor device of claim 17, comprising wherein the MOS transistor integrated into the semiconductor body is configured such that the subthreshold current rises or falls exponentially when there is a change in the temperature to be measured.

19. The semiconductor device of claim 18, comprising wherein a base of the bipolar transistor constitutes a drain region of the MOS transistor.

20. The semiconductor device of claim 19, comprising wherein the base of the bipolar transistor is configured as a floating base.

21. The semiconductor device of claim 20, comprising wherein the MOS transistor is embodied as a trench transistor.

22. The semiconductor device of claim 21, comprising wherein the trench transistor has a plurality of source regions, body regions, drain regions and gate electrodes provided in trenches, and configured via the gate electrodes to generate current flows between the source regions and the drain regions through the body regions.

23. The semiconductor device of claim 22, comprising wherein the drain regions form the base of the bipolar transistor.

24. A semiconductor device, comprising:

a semiconductor body; and

means for sensing temperature integrated in the semiconductor body, for measuring the temperature in the semiconductor body, wherein the temperature sensor has a MOS transistor and a bipolar transistor, the MOS transistor being integrated into the semiconductor body such that a subthreshold current intensity of the MOS transistor rises or falls when there is a change in the temperature to be measured, and the MOS transistor is connected to the bipolar transistor such that the subthreshold current of the MOS transistor is amplified by the bipolar transistor.

25. The semiconductor device of claim 24, comprising wherein the MOS transistor integrated into the semiconductor body is configured such that the subthreshold current rises or falls exponentially when there is a change in the temperature to be measured.