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Vertical cavity surface emitting laser with undoped top mirror

  • US 20060072639A1
  • Filed: 09/08/2005
  • Published: 04/06/2006
  • Est. Priority Date: 10/01/2004
  • Status: Active Grant
First Claim
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1. A VCSEL comprising a substrate of a first conductivity type and an epitaxial structure, wherein the epitaxial structure comprises:

  • a bottom DBR mirror disposed on the substrate wherein the bottom mirror is doped to the first conductivity type;

    an active layer disposed on the bottom mirror that contains quantum wells;

    a periodically doped first conduction layer of a second conductivity type, the first conduction layer coupled to the active layer, the doped first conduction layer being heavily doped at a location where the optical electric field is at about a minimum;

    an aperture formed in the epitaxial structure above the quantum wells; and

    a top mirror coupled to the periodically doped first conduction layer, wherein the top mirror is essentially undoped.

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