Vertical cavity surface emitting laser having multiple top-side contacts
First Claim
1. A VCSEL comprising a substrate and an epitaxial structure, wherein the epitaxial structure comprises:
- a bottom DBR mirror disposed on the substrate wherein the bottom mirror is essentially undoped;
a periodically doped first conduction layer region of a first conductivity type, the doped first conduction layer region coupled to the bottom DBR mirror, the doped first conduction layer region being heavily doped at a location where the optical electric field is at about a minimum;
an active layer disposed on the periodically doped first conduction layer region that contains quantum wells;
a periodically doped second conduction layer region of a second conductivity type, the doped second conduction layer region coupled to the active layer, the doped second conduction layer region being heavily doped at a location where the optical electric field is at about a minimum;
an aperture formed in the epitaxial structure above the quantum wells and below the second conduction layer region;
a top mirror coupled to the periodically doped second conduction layer region, wherein the top mirror is essentially undoped, the top mirror forming a mesa structure; and
a protective oxide layer surrounding the top mirror to protect at least a portion the top mirror from being oxidized during a wet oxidation step.
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Abstract
A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
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Citations
18 Claims
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1. A VCSEL comprising a substrate and an epitaxial structure, wherein the epitaxial structure comprises:
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a bottom DBR mirror disposed on the substrate wherein the bottom mirror is essentially undoped;
a periodically doped first conduction layer region of a first conductivity type, the doped first conduction layer region coupled to the bottom DBR mirror, the doped first conduction layer region being heavily doped at a location where the optical electric field is at about a minimum;
an active layer disposed on the periodically doped first conduction layer region that contains quantum wells;
a periodically doped second conduction layer region of a second conductivity type, the doped second conduction layer region coupled to the active layer, the doped second conduction layer region being heavily doped at a location where the optical electric field is at about a minimum;
an aperture formed in the epitaxial structure above the quantum wells and below the second conduction layer region;
a top mirror coupled to the periodically doped second conduction layer region, wherein the top mirror is essentially undoped, the top mirror forming a mesa structure; and
a protective oxide layer surrounding the top mirror to protect at least a portion the top mirror from being oxidized during a wet oxidation step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of fabricating a VCSEL comprising:
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forming an essentially undoped bottom mirror on a substrate wherein forming a bottom mirror comprises forming alternating layers of materials with different indices of refraction;
forming a first conduction layer region on the bottom mirror, wherein forming a first conduction layer region comprises doping portions of the first conduction layer region more heavily at a location where the optoelectronic energy is at about a minimum when the VCSEL is in use forming an active layer that contains quantum wells on the first conduction layer region;
forming a second conduction layer region on the active layer, wherein forming a second conduction layer region comprises doping portions of the second conduction layer region more heavily at a location where the optoelectronic energy is at about a minimum when the VCSEL is in use;
forming a top mirror on the second conduction layer region such that the top mirror is essentially undoped and such that the top mirror forms a mesa structure; and
forming an oxide layer around the mesa structure to protect the top mirror from a wet oxidation step. - View Dependent Claims (13, 14, 15, 16, 17)
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18. In a processing system for processing a wafer with an epitaxial structure including a bottom mirror, a first conduction layer, an active region a second conducting layer and a top mirror, a method of manufacturing a VCSEL comprising:
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performing a first etch to form a mesa structure, wherein the mesa structure includes at least a portion of the top mirror;
depositing a photoresist layer to form an HF shield mask around at least a portion of the mesa structure;
performing an HF etch to expose a portion of the second conduction layer; and
forming an oxide layer around the mesa structure to protect the top mirror from a wet oxidation step.
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Specification