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Vertical cavity surface emitting laser having multiple top-side contacts

  • US 20060072640A1
  • Filed: 09/12/2005
  • Published: 04/06/2006
  • Est. Priority Date: 10/01/2004
  • Status: Active Grant
First Claim
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1. A VCSEL comprising a substrate and an epitaxial structure, wherein the epitaxial structure comprises:

  • a bottom DBR mirror disposed on the substrate wherein the bottom mirror is essentially undoped;

    a periodically doped first conduction layer region of a first conductivity type, the doped first conduction layer region coupled to the bottom DBR mirror, the doped first conduction layer region being heavily doped at a location where the optical electric field is at about a minimum;

    an active layer disposed on the periodically doped first conduction layer region that contains quantum wells;

    a periodically doped second conduction layer region of a second conductivity type, the doped second conduction layer region coupled to the active layer, the doped second conduction layer region being heavily doped at a location where the optical electric field is at about a minimum;

    an aperture formed in the epitaxial structure above the quantum wells and below the second conduction layer region;

    a top mirror coupled to the periodically doped second conduction layer region, wherein the top mirror is essentially undoped, the top mirror forming a mesa structure; and

    a protective oxide layer surrounding the top mirror to protect at least a portion the top mirror from being oxidized during a wet oxidation step.

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