Semiconductor fabricating apparatus and method and apparatus for determining state of semiconductor fabricating process

• US 20060073619A1
• Filed: 12/05/2005
• Published: 04/06/2006
• Est. Priority Date: 08/29/2002
• Status: Abandoned Application

• Current Assignee: Hideyuki Yamamoto, Motohiko Yoshigai, Tatehito Usui, Tsuyoshi Yoshida
• Original Assignee: Hideyuki Yamamoto, Motohiko Yoshigai, Tatehito Usui, Tsuyoshi Yoshida
• Inventors: Yoshida, Tsuyoshi, Yoshigai, Motohiko, Usui, Tatehito, Yamamoto, Hideyuki
• Application Number:
  US11/293,213
• Publication Number:
  US 20060073619A1
• Time in Patent Office: Days
• US Class Current: 438/9
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

In a semiconductor device fabrication apparatus for performing an etching process for a semiconductor wafer having a plurality of films formed on a surface thereof and disposed in a chamber, by using plasma generated in the chamber, a change in light of multi-wavelength from the surface of the semiconductor wafer is measured during a predetermined period of the etching process, and a state of the etching process is judged from the displayed change amount of light of multi-wavelength.

Claims

1. A semiconductor device fabricating method for etching a sample to be processed, which is placed within a vacuum chamber and has a plurality of films formed on a surface thereof, by using plasma generated within the vacuum chamber, comprising the steps of:

a) detecting interference lights of multiple wavelengths emitted from a surface of one sample to be processed during a processing of the sample to be processed;

b) obtaining an intensity of the interference lights of multiple wavelengths from the detected interference lights of multiple wavelengths emitted from the surface of the one sample thereby to obtain one pattern consisting of time differential values of the detected interference lights of multiple wavelengths with respect to the one sample using a time as a parameter;

c) prior to steps a) and b), detecting interference lights of multiple wavelengths emitted from a surface of another sample to be processed to obtain an intensity of the interference lights of multiple wavelengths, and to obtain another pattern consisting of time differential values of the detected interference lights of multiple wavelengths with respect to the another sample using a time as a parameter;

d) superposing data constituting the one pattern and data constituting the another pattern after that the one pattern and the another pattern are matched by using a specific parameter, thereby obtaining a superimposed pattern; and

e) detecting a state of an etching process of the one sample based on the superimposed pattern.

2. A semiconductor device fabricating method according to claim 1, wherein the specific parameter is a time point where second components obtained by analyzing main components of the data constituting the one and another patterns becomes peak.

3. A semiconductor device fabricating method according to claim 2, wherein the one sample and the anther sample are etched under different conditions, respectively.

4. A semiconductor device fabricating method according to claim 2, further comprising the steps of:

detecting a speed of the etching process based on the superimposed pattern.

5. A semiconductor device fabricating method according to claim 3, wherein the step e) includes substeps of:

detecting a speed of the etching process based on the superimposed pattern; and

detecting the state of the etching process of the one sample based on the speed of the etching process thus detected.

6. A semiconductor device fabricating method according to claim 1, wherein the one sample and the anther sample are etched under different conditions, respectively.

7. A semiconductor device fabricating method according to claim 6, wherein the step e) includes substeps of:

detecting a speed of the etching process based on the superimposed pattern; and

detecting the state of the etching process of the one sample based on the speed of the etching process thus detected.

8. A semiconductor device fabricating method according to claim 1, wherein the step e) includes substeps of:

detecting a speed of the etching process based on the superimposed pattern; and

detecting the state of the etching process of the one sample based on the speed of the etching process thus detected.

9. A semiconductor device fabricating method for etching a sample to be processed, which is placed within a vacuum chamber and has a plurality of films formed on a surface thereof, by using plasma generated within the vacuum chamber, comprising the steps of:

a) detecting interference lights of multiple wavelengths emitted from a surface of one sample to be processed during a processing of the sample to be processed;

b) obtaining an intensity of the interference lights of multiple wavelengths from the detected interference lights of multiple wavelengths emitted from the surface of the one sample thereby to obtain one pattern consisting of time differential values of the detected interference lights of multiple wavelengths with respect to the one sample using a time as a parameter;

c) prior to steps a) and b), detecting interference lights of multiple wavelengths emitted from a surface of another sample to be processed to obtain an intensity of the interference lights of multiple wavelengths, and to obtain another pattern consisting of time differential values of the detected interference lights of multiple wavelengths with respect to the another sample using a time as a parameter;

d) superposing data constituting the one pattern and data constituting the another pattern after that the one pattern and the another pattern are matched by using a specific parameter, and averaging the data thus superimposed thereby to obtain a superimposed pattern; and

e) detecting a state of an etching process of the one sample based on the superimposed pattern.

10. A semiconductor device fabricating method according to claim 9, wherein the specific parameter is a time point where second components obtained by analyzing main components of the data constituting the one and another patterns becomes peak.

11. A semiconductor device fabricating method according to claim 10, wherein the one sample and the anther sample are etched under different conditions, respectively.

12. A semiconductor device fabricating method according to claim 11, further comprising the steps of:

detecting a speed of the etching process based on the superimposed pattern.

13. A semiconductor device fabricating method according to claim 10, wherein the step e) includes substeps of:

detecting a speed of the etching process based on the superimposed pattern; and

detecting the state of the etching process of the one sample based on the speed of the etching process thus detected.

14. A semiconductor device fabricating method according to claim 9, wherein the one sample and the anther sample are etched under different conditions, respectively.

15. A semiconductor device fabricating method according to claim 14, wherein the step e) includes substeps of:

detecting a speed of the etching process based on the superimposed pattern; and

detecting the state of the etching process of the one sample based on the speed of the etching process thus detected.

16. A semiconductor device fabricating method according to claim 9, wherein the step e) includes substeps of:

detecting a speed of the etching process based on the superimposed pattern; and

detecting the state of the etching process of the one sample based on the speed of the etching process thus detected.