Method for manufacturing semiconductor light emitting device

• US 20060073625A1
• Filed: 10/04/2005
• Published: 04/06/2006
• Est. Priority Date: 10/04/2004
• Status: Active Grant

• Current Assignee: Stanley Electric Company Limited
• Original Assignee: Stanley Electric Company Limited
• Inventors: Harada, Mitsunori
• Granted Patent: US 7,371,593 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/0554 External layer
• CPC Class Codes: H01L 2224/0555 Shape
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials

Abstract

A method for manufacturing a semiconductor light emitting device can result in a device that includes a housing having a cavity, a light emitting element on a bottom face of the cavity, and a wavelength conversion layer provided within the cavity. The wavelength conversion layer can include particles of a wavelength conversion material. The method includes forming the wavelength conversion layer within the cavity, which can include applying and hardening a first material to form a first wavelength conversion layer on the light emitting element, and applying and hardening a second material to substantially fill the remainder of the entire cavity, thereby forming a second wavelength conversion layer. The semiconductor light emitting device manufactured by the inventive method can achieve uniform light emitting characteristics without substantially any uneven color and can include high heat dissipation efficiency.

Claims

1. A method for manufacturing a semiconductor light emitting device, comprising:

providing a housing having a cavity, a power feed line, and a light emitting element electrically connected to the power feed line;

forming a wavelength conversion layer in the cavity, the wavelength conversion layer including particles of a wavelength conversion material and further including a first wavelength conversion layer and a second wavelength conversion layer, wherein forming the wavelength conversion layer includes,

applying and hardening a first material to form the first wavelength conversion layer adjacent the light emitting element, and

applying and hardening a second material in the cavity, thereby forming the second wavelength conversion layer.

2. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein:

forming the wavelength conversion layer includes injecting a transparent resin spacer, that does not contain a wavelength conversion material, inside the cavity to an extent that exposes at least a portion of an upper surface of the light emitting element, and hardening the transparent resin spacer.

3. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein:

providing the housing having the cavity includes providing the cavity that widens upwards.

4. The method for manufacturing a semiconductor light emitting device according to claim 2, wherein:

providing the housing having the cavity includes providing the cavity that widens upwards.

5. The method for manufacturing a semiconductor light emitting device according to claim 2, wherein:

providing the housing having the cavity includes providing the cavity that contains a lower cavity and an upper cavity, the upper cavity being wider than the lower cavity and positioned at a step portion that widens outward above the lower cavity; and

injecting the transparent resin spacer includes providing an outer peripheral edge of the transparent resin spacer positioned at a substantially same height as the step portion.

6. The method for manufacturing a semiconductor light emitting device according to claim 4, wherein:

the cavity contains a lower cavity and an upper cavity, the upper cavity being wider than the lower cavity and positioned at a step portion that widens outward above the lower cavity; and

an outer peripheral edge of the transparent resin spacer is positioned at a same height as the step portion.

7. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein:

the first wavelength conversion layer has a higher concentration of wavelength conversion material than does the second wavelength conversion layer.

15. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein:

the wavelength conversion material is a fluorescent material.

16. The method for manufacturing a semiconductor light emitting device according to claim 1, further comprising:

insertion molding the power feed line within the housing, the power feed line including a lead frame that is exposed on a bottom face of the cavity.

17. The method for manufacturing a semiconductor light emitting device according to claim 1, further comprising:

insertion molding the power feed line within the housing, the power feed line including a lead frame that defines the cavity.

18. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein:

the power feed line includes an electrode layer formed of a conductive thin film on a portion of at least one of a surface of the housing, a side wall of the cavity, and a bottom face of the cavity.

8. A method for manufacturing a semiconductor light emitting device, comprising:

providing a housing having a cavity, a power feed line, and a light emitting element electrically connected to the power feed line;

forming a wavelength conversion layer in the cavity, the wavelength conversion layer including particles of a wavelength conversion material and further including a first wavelength conversion layer and a second wavelength conversion layer, the cavity including a lower cavity and an upper cavity, wider than the lower cavity, and positioned at a step portion of the housing that widens outward above the lower cavity, wherein forming a wavelength conversion layer includes,

applying and hardening a second material to form the second wavelength conversion layer in the cavity such that,

at least a portion of an upper surface of the light emitting element is exposed,

a surface of the second wavelength conversion layer is formed in a bowl shape with the surface rising up towards a periphery of the second wavelength conversion layer, and

an outer peripheral edge of the surface of the second wavelength conversion layer is located over the step portion, and

applying and hardening a first material to substantially fill a remainder of the cavity therewith, thereby forming the first wavelength conversion layer.

9. The method for manufacturing a semiconductor light emitting device according to claim 8, wherein:

the first wavelength conversion layer has a higher concentration of wavelength conversion material than does the second wavelength conversion layer.

10. The method for manufacturing a semiconductor light emitting device according to claim 8, further comprising:

controlling a slope of the bowl shape based on a shape of the step portion when applying the second material for the second wavelength conversion layer.

11. The method for manufacturing a semiconductor light emitting device according to claim 8, further comprising:

controlling a slope of the bowl shape based on shapes of side walls of the lower cavity and the upper cavity when applying the second material for the second wavelength conversion layer.

12. A method for manufacturing a semiconductor light emitting device, comprising:

providing a housing having a cavity, a power feed line, and a light emitting element electrically connected to the power feed line;

forming a wavelength conversion layer in the cavity, the wavelength conversion layer including particles of a wavelength conversion material and further including a first wavelength conversion layer and a second wavelength conversion layer, the cavity including a lower cavity that widens upwards and an upper cavity whose side wall is continued from an upper opening end of the lower cavity to extend substantially vertically, wherein forming the wavelength conversion layer includes,

applying and hardening a second material to form the second wavelength conversion layer within the cavity such that,

at least a portion of an upper surface of the light emitting element is exposed,

a surface of the second wavelength conversion layer is formed in a bowl shape with the surface rising up toward a periphery of the second wavelength conversion layer, and

an outer peripheral edge of the surface of the second wavelength conversion layer is located at the side wall of the upper cavity, and

applying and hardening a first material to substantially fill a remainder of the cavity therewith, thereby forming the first wavelength conversion layer.

13. The method for manufacturing a semiconductor light emitting device according to claim 12, wherein:

the first wavelength conversion layer has a higher concentration of wavelength conversion material than does the second wavelength conversion layer.

14. The method for manufacturing a semiconductor light emitting device according to claim 12, further comprising:

controlling a slope of the bowl shape based on a shape of a side wall of the lower cavity and a shape of a side wall of the upper cavity when applying the second material for the second wavelength conversion layer.

19. A method for manufacturing a semiconductor light emitting device, comprising:

providing a power feed line defining a cavity, and a light emitting element electrically connected to the power feed line;

forming a wavelength conversion layer in the cavity, the wavelength conversion layer including particles of a wavelength conversion material and further including a first wavelength conversion layer and a second wavelength conversion layer, wherein forming the wavelength conversion layer includes,

applying and hardening a first material to form the first wavelength conversion layer adjacent the light emitting element, and

applying and hardening a second material to substantially fill a remainder of the cavity therewith, thereby forming the second wavelength conversion layer.

20. The method for manufacturing a semiconductor light emitting device according to claim 19, further comprising:

enclosing all of the power feed line and the wavelength conversion layer by a resin mold.