Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
First Claim
1. A method of ion implanting a species in a workpiece to a selected ion implantation profile depth, comprising:
- placing a workpiece comprising a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber;
applying a chucking voltage to said electrostatic chuck;
introducing into the chamber a precursor gas comprising a species to be ion implanted in said workpiece; and
applying an RF bias to said electrostatic chuck, said RF bias having a bias level corresponding to said ion implantation profile depth.
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Abstract
A method of ion implanting a species in a workpiece to a selected ion implantation profile depth includes placing a workpiece having a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber and applying a chucking voltage to the electrostatic chuck. The method further includes introducing into the chamber a precursor gas including a species to be ion implanted in the workpiece and applying an RF bias to the electrostatic chuck, the RF bias having a bias level corresponding to the ion implantation profile depth.
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Citations
20 Claims
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1. A method of ion implanting a species in a workpiece to a selected ion implantation profile depth, comprising:
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placing a workpiece comprising a semiconductor material on an electrostatic chuck in or near a processing region of a plasma reactor chamber;
applying a chucking voltage to said electrostatic chuck;
introducing into the chamber a precursor gas comprising a species to be ion implanted in said workpiece; and
applying an RF bias to said electrostatic chuck, said RF bias having a bias level corresponding to said ion implantation profile depth. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification