Method for implanting dopants within a substrate by tilting the substrate relative to the implant source
First Claim
1. A method for implanting a dopant in a substrate, comprising:
- tilting a substrate located on or over an implant platen about an axis in a first direction with respect to an implant source, wherein the substrate has one or more patterned gate structures located thereover;
implanting a portion of an implant dose within the substrate and below the one or more patterned gate structures, the substrate tilted in the first direction;
tilting the substrate having already been tilted in the first direction about the axis in a second opposite direction; and
implanting at least a portion of the implant dose within the substrate and below the one or more patterned gate structures, the substrate tilted in the second opposite direction.
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Abstract
The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.
16 Citations
20 Claims
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1. A method for implanting a dopant in a substrate, comprising:
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tilting a substrate located on or over an implant platen about an axis in a first direction with respect to an implant source, wherein the substrate has one or more patterned gate structures located thereover;
implanting a portion of an implant dose within the substrate and below the one or more patterned gate structures, the substrate tilted in the first direction;
tilting the substrate having already been tilted in the first direction about the axis in a second opposite direction; and
implanting at least a portion of the implant dose within the substrate and below the one or more patterned gate structures, the substrate tilted in the second opposite direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising:
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forming a gate structure over a substrate; and
forming implants within the substrate below the gate structure, including;
tilting the substrate located on or over an implant platen about an axis in a first direction with respect to an implant source;
implanting a portion of an implant dose within the substrate tilted in the first direction;
tilting the substrate having already been tilted in the first direction about the axis in a second opposite direction; and
implanting at least a portion of the implant dose within the substrate tilted in the second opposite direction. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification