Semiconductor light emitting device

• US 20060076569A1
• Filed: 10/13/2005
• Published: 04/13/2006
• Est. Priority Date: 10/13/2004
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Takezawa, Hatsuo, Otsuka, Kazuaki, Tamatani, Masaaki
• Application Number:
  US11/249,134
• Publication Number:
  US 20060076569A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: C09K 11/77342 Silicates
• CPC Class Codes: C09K 11/7739 with halogens
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

In one aspect of the present invention, a semiconductor light emitting device may include a light emitting element configured to emit a first wavelength light and a phosphor configured to absorb the first wavelength light and emit light of a second wavelength which is different from the first wavelength. The phosphor contains a silicate represented by the formula (Me_1-yEu_y)₂SiO₄, wherein Me is at least one element selected from the group consisting of Ba, Sr, Ca and Mg, and y is >0. The phosphor has a grain size of from about 10 to about 50 micrometers.

Claims

1. A semiconductor light emitting device, comprising:

a light emitting element configured to emit a first wavelength light; and

a phosphor configured to absorb the first wavelength light and emit light of a second wavelength which is different from the first wavelength, wherein the phosphor contains a silicate represented by the formula (Me_1-yEu_y)₂SiO₄, wherein Me is at least one element selected from the group consisting of Ba, Sr, Ca and Mg, and y is >

0, and wherein the phosphor has a grain size of from about 10 to about 50 micrometers.

2. A semiconductor light emitting device of claim 1, wherein the phosphor further comprises at least one of an alkaline earth metal phosphate, an alkaline earth metal aluminate, an alkaline earth metal borate, and an alkaline earth metal germinate.

3. A semiconductor light emitting device of claim 1, wherein the grain size of the phosphor is from about 15 to about 50 micrometers.

4. A semiconductor light emitting device of claim 1, wherein the grain size of the phosphor is from about 20 to about 50 micrometers.

5. A semiconductor light emitting device of claim 1 further comprising a resin provided on the light emitting element, wherein the phosphor is dispersed in the resin.

6. A semiconductor light emitting device, comprising:

a light emitting element configured to emit a first wavelength light;

a phosphor configured to absorb the first wavelength light and emit light of a second wavelength which is different from the first wavelength, wherein the phosphor contains a silicate represented by the formula (Me_1-yEu_y)₂SiO₄, wherein Me is at least one element selected from the group consisting of Ba, Sr, Ca and Mg, and y is >

0, and wherein the phosphor has a grain size of from about 10 to about 50 micrometers; and

a particle provided on the phosphor, wherein the particle has a grain size which is less than the grain size of the phosphor.

7. A semiconductor light emitting device of claim 6, wherein the particle is substantially transparent to one of the first wavelength light and the second wavelength light.

8. A semiconductor light emitting device of claim 6, wherein the grain size of the particle is from about 0.01 to about 0.5 micrometers.

9. A semiconductor light emitting device of claim 6, wherein the particle is at least one of a silica, an alumina, an alkaline earth metal hydride, and an alkaline earth metal oxide.

10. A semiconductor light emitting device of claim 6, wherein the phosphor further comprises at least one of an alkaline earth metal phosphate, an alkaline earth metal aluminate, an alkaline earth metal borate, and an alkaline earth metal germinate.

11. A semiconductor light emitting device of claim 6, wherein the grain size of the phosphor is from about 15 to about 50 micrometers.

12. A semiconductor light emitting device of claim 6, wherein the grain size of the phosphor is from about 20 to about 50 micrometers.

13. A semiconductor light emitting device, comprising:

a light emitting element configured to emit a first wavelength light;

a first configured to absorb the first wavelength light and emit light of a second wavelength which is different from the first wavelength, wherein the first phosphor contains a silicate represented by the formula (Me_1-yEu_y)₂SiO₄, wherein Me is at least one element selected from the group consisting of Ba, Sr, Ca and Mg, and y is >

0, and wherein the first phosphor has a grain size of from about 10 to about 50 micrometers; and

a second phosphor configured to absorb the first wavelength light and emit a third wavelength light, wherein the third wavelength light is different in wavelength from the first wavelength light and from the second wavelength light.

14. A semiconductor light emitting device of claim 13, further comprising a binder resin configured to combine the first phosphor and the second phosphor.

15. A semiconductor light emitting device of claim 14, wherein the binder resin is at least one of a silicone resin and an acrylic resin.

16. A semiconductor light emitting device of claim 13, further comprising, a particle provided on one of the first phosphor and the second phosphor, wherein the particle has a grain size which is less than the grain size of at least one of the first phosphor and the second phosphor.

17. A semiconductor light emitting device of claim 16, wherein the particle is substantially transparent to one of the first wavelength light, the second wavelength light and the third wavelength.

18. A semiconductor light emitting device of claim 13, wherein the phosphor further comprises at least one of an alkaline earth metal phosphate, an alkaline earth metal aluminate, an alkaline earth metal borate, and an alkaline earth metal germinate.

19. A semiconductor light emitting device of claim 13, wherein the grain size of the first phosphor is from about 15 to about 50 micrometers.

20. A semiconductor light emitting device of claim 13, wherein the grain size of the first phosphor is from about 20 to about 50 micrometers.