Semiconductor device
First Claim
1. A semiconductor device comprising:
- (a) a vertical field effect transistor, said vertical field effect transistor comprising;
a drain electrode formed on a first surface of a first conductivity type of a semiconductor;
a pair of first trenches formed from a second surface of the semiconductor;
control regions of a second conductivity type formed respectively along said first trenches;
a source region of the first conductivity type formed along the second surface of the semiconductor between said first trenches;
a source electrode joined to said source region; and
a gate electrode adjacent to said control regions, said semiconductor device further comprising;
(b) a pair of second trenches formed from the second surface of the semiconductor, independently of said field effect transistor;
(c) control regions of the second conductivity type formed along said second trenches; and
(d) a diode having a junction formed on the second surface between said second trenches.
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Accused Products
Abstract
A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor, control regions of a second conductivity type formed respectively along the first trenches, a source region of the first conductivity type formed along the second surface of the semiconductor between the first trenches, a source electrode joined to the source region, and a gate electrode adjacent to the control regions, (b) a pair of second trenches formed from the second surface of the semiconductor independently of the field effect transistor, (c) control regions of the second conductivity type formed along the second trenches, and (d) a diode having a junction formed on the second surface between the second trenches.
31 Citations
20 Claims
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1. A semiconductor device comprising:
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(a) a vertical field effect transistor, said vertical field effect transistor comprising;
a drain electrode formed on a first surface of a first conductivity type of a semiconductor;
a pair of first trenches formed from a second surface of the semiconductor;
control regions of a second conductivity type formed respectively along said first trenches;
a source region of the first conductivity type formed along the second surface of the semiconductor between said first trenches;
a source electrode joined to said source region; and
a gate electrode adjacent to said control regions, said semiconductor device further comprising;
(b) a pair of second trenches formed from the second surface of the semiconductor, independently of said field effect transistor;
(c) control regions of the second conductivity type formed along said second trenches; and
(d) a diode having a junction formed on the second surface between said second trenches. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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(a) a vertical field effect transistor, said vertical field effect transistor comprising;
a drain electrode formed on a first surface of a first conductivity type of a semiconductor;
a pair of first trenches formed from a second surface of the semiconductor;
control regions of a second conductivity type formed respectively along said first trenches;
a source region of the first conductivity type formed along the second surface of the semiconductor between said first trenches;
a source electrode joined to said source region; and
a gate electrode adjacent to said control regions, said semiconductor device further comprising;
(b) a pair of second trenches formed from the second surface of the semiconductor, independently of said field effect transistor;
(c) control regions of the second conductivity type formed along said second trenches;
(d) a cathode layer of the first conductivity type formed along the second surface between said second trenches; and
(e) a hetero junction diode including polycrystalline silicon of the second conductivity type in contact with said cathode layer. - View Dependent Claims (5)
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6. A silicon carbide semiconductor device comprising:
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(a) a vertical field effect transistor, said vertical field effect transistor comprising;
a substrate of a first conductivity type having a low impurity concentration and a band gap of at least 2.0 eV;
a first layer formed along a first surface of said substrate, said first layer being lower in resistance than said substrate;
a drain electrode formed on a surface of said substrate;
first trenches formed from a surface of said first layer;
a second region of the first conductivity type formed in said first layer so as to come in contact with said first trenches;
a source electrode joined to said second region;
control regions of a second conductivity type formed respectively along said first trenches; and
a gate electrode adjacent to said control regions, said semiconductor device further comprising;
(b) a pair of second trenches formed in said first layer, independently of said field effect transistor;
(c) control regions of the second conductivity type formed along said second trenches;
(d) a cathode region of the first conductivity type formed in said first layer between said second trenches; and
(e) a hetero junction diode including polycrystalline silicon of the second conductivity type in contact with said cathode region. - View Dependent Claims (7)
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8. A semiconductor device comprising:
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(a) a vertical field effect transistor, said vertical field effect transistor comprising;
a drain electrode formed on a first surface of a first conductivity type of a semiconductor;
a pair of trenches formed from a second surface of the semiconductor;
control regions of a second conductivity type formed respectively along said trenches;
a second region of the first conductivity type formed along the second surface of the semiconductor between said trenches;
a source electrode joined to said second region; and
a gate electrode adjacent to said control regions, said semiconductor device further comprising;
(b) a third layer of the second conductivity type formed from the second surface side of the semiconductor, independently of said field effect transistor;
(c) a fourth layer of the first conductivity type formed inside said third layer and along the second surface; and
(d) a diode formed inside said fourth layer and along the second surface. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A silicon carbide semiconductor device comprising:
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(a) a vertical field effect transistor, said vertical field effect transistor comprising;
a substrate of a first conductivity type having a low impurity concentration and a band gap of at least 2.0 eV;
a first layer of the first conductivity type formed along a first surface of said substrate, said first layer being lower in resistance than said substrate;
a drain electrode formed on a surface of said substrate;
trenches formed in said first layer;
a second region of the first conductivity type formed in said first layer so as to come in contact with said trenches;
a source electrode joined to said second region;
control regions of a second conductivity type formed respectively along said trenches; and
a gate electrode adjacent to said control regions, said semiconductor device further comprising;
(b) a third layer of the second conductivity type formed in said first layer, independently of said field effect transistor;
(c) a fourth layer of the first conductivity type formed inside said third layer; and
(d) a diode formed between said fourth layer and said third layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification