Methods for marking a bare semiconductor die
First Claim
1. A method of marking a semiconductor die after a thinning process for reducing a thickness of the semiconductor die, the semiconductor die having an active surface and a thinned surface, the method comprising:
- providing the semiconductor die in wafer form;
applying a tape having optical energy-markable properties to at least a portion of the thinned surface of the semiconductor die;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark on a portion of the semiconductor die.
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Accused Products
Abstract
A method used for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including back grinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multilevel laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogenous surface for marking subsequent to exposure to electromagnetic radiation.
141 Citations
24 Claims
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1. A method of marking a semiconductor die after a thinning process for reducing a thickness of the semiconductor die, the semiconductor die having an active surface and a thinned surface, the method comprising:
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providing the semiconductor die in wafer form;
applying a tape having optical energy-markable properties to at least a portion of the thinned surface of the semiconductor die;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark on a portion of the semiconductor die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of marking a semiconductor die after a thinning process for reducing a thickness of the semiconductor die, the semiconductor die having an active surface and a thinned surface, the method comprising:
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providing the semiconductor die in sliced wafer form;
applying a tape having optical energy-markable properties to at least a portion of the thinned surface of the semiconductor die;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark on a portion of the semiconductor die.
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23. A method of marking a semiconductor die after a thinning process for reducing a thickness of the semiconductor die, the semiconductor die having an active surface and a thinned surface, the method comprising:
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providing the semiconductor die as a portion of a wafer;
applying a tape having optical energy-markable properties to at least a portion of the thinned surface of the semiconductor die;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark on a portion of the semiconductor die.
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24. A method of marking a semiconductor die after a thinning process for reducing a thickness of the semiconductor die, the semiconductor die having an active surface and a thinned surface, the method comprising:
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providing the semiconductor die as a portion of a sliced wafer;
applying a tape having optical energy-markable properties to at least a portion of the thinned surface of the semiconductor die;
subsequently exposing at least a portion of the tape to optical energy; and
forming a mark on a portion of the semiconductor die.
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Specification