Thin-film transistor and methods
First Claim
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1. A method for fabricating a thin-film transistor (TFT), comprising the steps of:
- a) providing a substrate, b) depositing and patterning a metal gate adapted to be anodized, c) anodizing the patterned metal gate to form a gate dielectric on the metal gate, d) depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and e) depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer.
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Abstract
A thin-film transistor (TFT) is fabricated by providing a substrate, depositing and patterning a metal gate, anodizing the patterned metal gate to form a gate dielectric on the metal gate, depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer.
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Citations
68 Claims
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1. A method for fabricating a thin-film transistor (TFT), comprising the steps of:
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a) providing a substrate, b) depositing and patterning a metal gate adapted to be anodized, c) anodizing the patterned metal gate to form a gate dielectric on the metal gate, d) depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and e) depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A method for fabricating a thin-film transistor (TFT), comprising the steps of:
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a) providing a flexible substrate, b) depositing on the flexible substrate a metal film adapted to be anodized and patterning a metal gate, c) anodizing the patterned metal gate to form a gate dielectric on the metal gate, d) optionally annealing, e) depositing and patterning a channel layer comprising zinc-indium oxide, f) optionally annealing, g) depositing and patterning a conductive source and conductive drain comprising indium-tin oxide (ITO), and h) depositing and patterning conductive contact pads electrically coupled to the metal gate, the conductive source, and the conductive drain respectively. - View Dependent Claims (34, 35, 36)
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37. A thin-film transistor formed on a substrate, the thin-film transistor comprising:
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a) a metallic gate disposed on the substrate, b) a gate dielectric formed by anodization of the metallic gate and covering the metallic gate, c) a channel comprising a multi-cation oxide material disposed on at least a portion of the gate dielectric, and d) a conductive source and a conductive drain, both contiguous with the channel and spaced apart from each other. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60)
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61. A thin-film transistor formed on a substrate, the thin-film transistor comprising:
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a) a metallic aluminum gate disposed on the substrate, b) an aluminum oxide gate dielectric formed by anodization of the metallic aluminum gate and covering the metallic aluminum gate, c) a channel comprising a zinc-indium oxide material disposed on at least a portion of the aluminum oxide gate dielectric, and d) a conductive source and a conductive drain of indium-tin oxide (ITO) spaced apart from each other and both disposed contiguous with the channel. - View Dependent Claims (62, 63, 64, 65, 66)
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67. A thin-film transistor formed on a substrate, the thin-film transistor comprising:
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a) conductive means for gating disposed on the substrate, b) dielectric means for covering and insulating the conductive means for gating, the dielectric means being formed by anodization of the conductive means, c) channel means for controllably conducting current carriers, the channel means comprising a multi-cation-oxide material disposed on at least a portion of the dielectric means, and d) conductive source and drain means for injecting and collecting current carriers, the source and drain means being spaced apart from each other and both being disposed contiguous with the channel means.
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68. A method of using a multi-cation oxide, comprising the steps of:
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a) providing a substrate, b) depositing and patterning a metal gate, c) forming a gate dielectric on the metal gate by anodization of the metal gate, d) depositing and patterning the multi-cation oxide over at least a portion of the gate dielectric to form a channel layer for a thin-film transistor, and e) depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer, whereby a thin-film transistor is fabricated.
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Specification