Substrate for stressed systems and method of making same

• US 20060079070A1
• Filed: 11/28/2005
• Published: 04/13/2006
• Est. Priority Date: 05/30/2003
• Status: Active Grant

• Current Assignee: Soitec Silicon On Insulator Technologies SA (Soitec S.A.)
• Original Assignee: Soitec Silicon On Insulator Technologies SA (Soitec S.A.)
• Inventors: Ghyselen, Bruno, Letertre, Fabrice, Rayssac, Olivier
• Granted Patent: US 7,163,873 B2
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: B81C 1/00365 having low tensile stress between layers
• CPC Class Codes: B81C 2201/0191 Transfer of a layer from a carrier wafer to a device wafer
• CPC Class Codes: C30B 25/183 being provided with a buffer layer, e.g. a lattice matching layer
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02439 Materials
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

Claims

1. A method of fabricating a stress absorbing microstructure assembly which comprises:

implanting atomic species on a transfer substrate so as to provide a plane of weakness on the transfer substrate;

associating a mechanical stress absorbing system with a support substrate;

assembling the transfer substrate in a face to face orientation with the support substrate;

treating the plane of weakness to further weaken it without generating cracking of the transfer substrate; and

detaching a portion of the transfer substrate so that a second portion of the transfer substrate remains on the support substrate.

2. The method of claim 1, wherein the mechanical stress absorbing system comprises an accommodation layer has an elasticity that is parallel to the surface of the support substrate, wherein the elasticity of the accommodation layer compensates for thermoplastic stress applied to the support substrate.

3. The method of claim 1, which further comprises heating the assembled transfer substrate and support substrate to about 1000°

C. to reinforce bonding between the transfer substrate and the support substrate.

4. The method of claim 1, wherein the accommodation layer is defined by a plurality of motifs formed in a surface of the substrate.

5. The method of claim 4, wherein the plurality of motifs is provided by etching at least one surface of the support substrate.

6. The method of claim 4, wherein the plurality of motifs formed in the support substrate includes spaced notches, trenches, or saw cuts.

7. The method of claim 6, wherein the trenches have a depth of about 10 μ

m, a width of about 1 μ

m and are spaced by about 1 μ

m.

8. The method of claim 1, wherein the transfer substrate includes a buffer layer.

9. The method of claim 8, wherein the portion of the transfer substrate that is detached includes the buffer layer.

10. The method of claim 8, wherein the buffer layer comprises a material selected from the group consisting of silicon, amorphous silicon, porous silicon, polysilicon, silicon carbide, gallium nitride, sapphire, aluminum nitride, and silicon nitride.

11. The method of claim 4, which further comprises depositing a nucleation layer directly upon the support substrate or upon a buffer layer on the support substrate, wherein the plurality of motifs are distributed on the surface of the support substrate to optimize spontaneous bonding between the substrate surface and either the buffer layer or the nucleation layer.

12. The method of claim 11, wherein the nucleation layer comprises a material selected from the group consisting silicon, silicon carbide, gallium nitride, sapphire, aluminum nitride, and diamond.

13. The method of claim 11, wherein the support substrate comprises a material selected from the group consisting of silicon, silicon carbide, sapphire, aluminum nitride, and diamond.

14. The method of claim 11, which further comprises providing an insulating layer on the buffer layer or the support substrate beneath the nucleation layer.

15. The method of claim 14, wherein the insulating layer is selected from the group consisting of thermal or deposited oxide of silicon, and boro-phospho-silicate glass.

16. The method of claim 11, wherein the nucleation layer has a thickness between about 0.1 μ

m to 2 μ

m.

17. The method of claim 11, wherein the buffer layer has a thickness of about 0.01 μ

m to 2 μ

m.

18. The method of claim 11, wherein the nucleation layer has a coefficient of thermal expansion that is different from that of the support substrate

19. The method of claim 1, wherein the support substrate has front and rear sides and the stress absorbing system is present at least on one side of the support substrate.

20. The method of claim 19, wherein the stress absorbing system includes a plurality of spaced motifs that do not directly contact the support substrate.