Pressure sensor with remote power source

• US 20060081061A1
• Filed: 10/18/2004
• Published: 04/20/2006
• Est. Priority Date: 10/18/2004
• Status: Active Grant

• Current Assignee: Precision Mechatronics Pty Ltd
• Original Assignee: Silverbrook Research Pty Limited
• Inventors: Silverbrook, Kia, Mallinson, Samuel George
• Granted Patent: US 7,240,560 B2
• Time in Patent Office: Days
• US Class Current: 73/754
• CPC Class Codes: B60C 23/0408 transmitting the signals by non-mechanical means from the wheel or tyre to a vehicle body mounted receiver

Abstract

A pressure sensor (30) for harsh environments such as vehicle tires, formed from a chamber (58) partially defined by a flexible membrane (50), the chamber (58) containing a fluid at a reference pressure. In use, the flexible membrane (50) deflects from any pressure difference between the reference pressure and the fluid pressure. The membrane (50) being at least partially formed from conductive material so that associated circuitry (34) converts the deflection of the flexible membrane (50) into an output signal indicative of the fluid pressure. The associated circuitry is adapted to be powered by electromagnetic radiation transmitted from a point remote from the sensor. Beaming energy to the sensor removes the need for long-life batteries, or can be used to supplement or charge the batteries. In either case, the sensor avoids the need for large batteries and is therefore small enough for installation in the valve stem or valve itself.

Claims

1. A pressure sensor for sensing a fluid pressure, the pressure sensor comprising:

a chamber partially defined by a flexible membrane, the chamber containing a fluid at a reference pressure, such that the flexible membrane deflects from any pressure difference between the reference pressure and the fluid pressure, the membrane being at least partially formed from conductive material; and

,

associated circuitry for converting the deflection of the flexible membrane into an output signal indicative of the fluid pressure;

wherein,

the associated circuitry is adapted to be powered by electromagnetic radiation transmitted from a point remote from the sensor.

2. A pressure sensor according to claim 1 wherein the flexible membrane is a laminate having at least two layers formed from the deposition of different metal ceramics.

3. A pressure sensor according to claim 2 wherein the metal ceramics are metal nitrides or mixed metal nitrides.

4. A pressure sensor according to claim 2 wherein the metal ceramics are titanium nitride, titanium aluminium nitride, tantalum silicon nitride, titanium aluminium silicon nitride, or tantalum aluminium silicon nitride.

5. A pressure sensor according to claim 4 wherein one or more of the layers of the laminate is metal.

6. A pressure sensor according to claim 5 wherein the metal is titanium, tantalum or vanadium.

7. A pressure sensor according to claim 1 wherein the chamber, the flexible membrane, and the associated circuitry are all formed on a silicon wafer substrate using lithographically masked etching and deposition techniques.

8. A pressure sensor according to claim 1 wherein the sensor is a capacitative sensor having:

a conductive layer deposited in the chamber to form a first capacitor electrode; and

,

the flexible membrane is conductive in order to form a second capacitor electrode;

such that,

deflection of the flexible membrane changes the capacitance which the associated circuitry converts to the output signal;

wherein,

the conductive layer is arranged such that deflection of the membrane towards the conductive layer can displace the fluid from between the membrane and the conductive layer.

9. A pressure sensor according to claim 1 wherein the pressure sensor is adapted to sense the air pressure within a pneumatic tire.

10. A pressure sensor according to claim 1 wherein the membrane is non-planar.

11. A pressure sensor according to claim 10 wherein the membrane is corrugated.

12. A pressure sensor according to claim 11 wherein, the membrane corrugations have a period of between 5 microns and 15 microns.

13. A pressure sensor according to claim 1 wherein, the membrane is substantially circular and the corrugations are annular.

14. A pressure sensor according to claim 10 wherein the corrugations have a substantially square-shaped cross-sectional profile.

15. A pressure sensor according to claim 14 wherein the flexible corrugated membrane has a corrugation factor of 8.

16. A pressure sensor according to claim 15 wherein the sensor has a linear response up to about 1 MPa.

17. A pressure sensor according to claim 1 wherein the flexible membrane is less than 3 microns thick.

18. A pressure sensor according to claim 1 further comprising a long-life battery adapted for recharging by the remotely transmitted radio waves.

19. A pressure sensor according to claim 8 wherein the conductive layer is arranged such that deflection of the membrane towards the conductive layer can displace the fluid from between the membrane and the conductive layer.

20. A pressure sensor according to claim 19 further comprising a passivation layer at least partially deposited over the conductive layer.

21. A pressure sensor according to claim 20 further comprising a CMOS layer disposed between the conductive layer and the substrate.

22. A pressure sensor according to claim 21 wherein the membrane is approximately 0.5 μ

m thick.

23. A pressure sensor according to claim 19 wherein the conductive layer is less than 50 microns from the membrane in its undeflected state.

24. A pressure sensor according to claim 1 wherein the apertured guard is a laminate of different layers.

25. A pressure sensor according to claim 1 further comprising a second chamber with a second membrane, the second chamber being sealed from the fluid pressure and the second membrane deflecting from a predetermined pressure difference in the second chamber;

wherein,

the associated circuitry converts the deflection of the second membrane into an adjustment of the output signal to compensate for the temperature of the sensor.

26. A pressure sensor according to claim 25 wherein the second chamber has a second conductive layer to form a capacitative sensor;

such that,

the associated circuitry uses the change in capacitance from deflection of the second flexible membrane, to calibrate the output signal.

27. A pressure sensor according to claim 26 wherein the second membrane is at least partially formed from a metal ceramic material.

28. A pressure sensor according to claim 27 wherein the conductive ceramic is a metal nitride.

29. A pressure sensor according to claim 28 wherein the membrane is titanium nitride, tantalum nitride, or vanadium nitride.

30. A pressure sensor according to claim 27 wherein the membrane is formed from a mixed metal nitride.

31. A pressure sensor according to claim 30 wherein the mixed metal nitride is selected from titanium silicon nitride, tantalum silicon nitride, vanadium silicon nitride, titanium aluminium silicon nitride, or tantalum aluminium silicon nitride.

32. A pressure sensor according to claim 1 wherein the conductive layer is apertured to allow the fluid to flow from between the membrane and the conductive layer.

33. A pressure sensor according to claim 7 wherein the wafer is a first wafer substrate with a front side and an opposing back side, a recess etched into the front side and at least one hole etched from the back side to the recess;

and the sensor further comprising;

a second wafer on the back side of the first wafer to seal the at least one hole;

wherein,

the second wafer is wafer bonded to the first wafer substrate.

34. A pressure sensor according to claim 33 wherein the wafer bonding is direct wafer bonding whereby the contacting surfaces of the first and second wafers are ultra clean, and activated by making them hydrophilic or hydrophobic prior to bonding, and then brought into contact at high temperature.

35. A pressure sensor according to claim 1 wherein the contacting surfaces are brought together at a temperature greater than 700°

C.

36. A pressure sensor according to claim 35 wherein the wafer bonding is anodic bonding offers whereby the contacting surfaces of the first and second wafers have a large voltage applied across them.

37. A pressure sensor according to claim 36 wherein the wafer bonding is intermediate layer bonding whereby a layer of low melting point material is applied to one or both of the contacting surfaces of the first and second wafers so that heat and pressure forms the wafer bond.

38. A pressure sensor according to claim 37 wherein the low melting point material is silicon nitride or titanium nitride.

39. A pressure sensor according to claim 1 wherein the membrane is circular with a diameter less than 500 microns.

40. A pressure sensor according to claim 39 wherein the membrane diameter is less than 300 microns.

41. A pressure sensor according to claim 40 wherein the membrane diameter is 100 microns.

42. A pressure sensor according to claim 24 wherein the layers are different materials.

43. A pressure sensor according to claim 42 wherein the different materials are silicon nitride and silicon dioxide.