Systems and methods for magnetron deposition

• US 20060081467A1
• Filed: 10/15/2004
• Published: 04/20/2006
• Est. Priority Date: 10/15/2004
• Status: Abandoned Application

• Current Assignee: 4D-S Pty, Ltd.
• Original Assignee: 4D-S Pty, Ltd.
• Inventors: Nagashima, Makoto, Schmidt, Dominik
• Application Number:
  US10/966,385
• Publication Number:
  US 20060081467A1
• Time in Patent Office: Days
• US Class Current: 204/298.160
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3438 Electrodes other than cathode
• CPC Class Codes: H01J 37/3452 Magnet distribution

Abstract

Systems and methods are disclosed for face target sputtering to fabricate semiconductors by an air-tight chamber in which an inert gas is admittable and exhaustible; a first cylindrical target plate; inner and outer cylindrical magnets respectively disposed adjacent to the cylindrical target plate such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field covering the target plate; and a substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited.

Claims

1. A face target sputtering apparatus to fabricate semiconductors, comprising:

an air-tight chamber in which an inert gas is admittable and exhaustible;

a first cylindrical target plate in the chamber;

inner and outer cylindrical magnets respectively disposed adjacent to the cylindrical target plate such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field covering the target plate; and

a substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited.

2. The apparatus of claim 1, comprising a plurality of opposing magnets moving around the outer cylindrical magnet.

3. The apparatus of claim 1, comprising a second cylindrical target plate facing the first cylindrical target plate.

4. The apparatus of claim 1, comprising a central magnet positioned at the center of the inner and outer cylindrical magnets.

5. The apparatus of claim 4, wherein the central magnet is elongated.

6. The apparatus of claim 1, comprising a back-bias power supply coupled to the substrate holder, wherein the substrate is selectively back-biased prior to face target sputtering with a metal to form a pattern on the layer.

7. The apparatus of claim 1, comprising forming a metal including platinum.

8. The apparatus of claim 7, wherein the platinum is sputtered on the layer.

9. The apparatus of claim 1, comprising a negative ion trap positioned between the outer ring magnet and the target plate.

10. The apparatus of claim 1, wherein the target is one of:

a cross-shaped target and a circular target.

11. The apparatus of claim 1, wherein the layer is a PCMO layer.

12. The apparatus of claim 9, wherein each plate comprises a CMO ceramic.

13. The apparatus of claim 9, where in each plate is a rectangular CMO plate.

14. The apparatus of claim 1, comprising one or more strips which interlocks to approximate a circular shape.

15. The apparatus of claim 13, wherein the strips have a backing plate for cooling and electrode attachment.

16. The apparatus of claim 1, comprising a water-cooling system in a center and an outer side.

17. The apparatus of claim 1, comprising a barrel-shaped magnetic field between the outer and inner magnet plates

18. The apparatus of claim 1, comprising targets at an oblique angle to the chuck.

19. The apparatus of claim 1, comprising an additional electron-ion magnetron excitation coil to increase the number of positive deposited ions above the wafer

20. The apparatus of claim 1, comprising a mechanism to move the magnetron or the chuck vertically during deposition to achieve a more uniform deposition.

21. The apparatus of claim 1, comprising a plurality of concentric magnets and circular target plates to form multiple doughnuts.