High-frequency heating device, semiconductor manufacturing device, and light source device

• US 20060081624A1
• Filed: 09/28/2005
• Published: 04/20/2006
• Est. Priority Date: 10/01/2004
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Fujii, Satoshi, Takada, Yutaka
• Granted Patent: US 7,554,054 B2
• Time in Patent Office: Days
• US Class Current: 219/716
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32201 Generating means
• CPC Class Codes: H01J 37/32266 Means for controlling power transmitted to the plasma
• CPC Class Codes: H01J 37/32302 Plural frequencies
• CPC Class Codes: H01J 37/32311 Circuits specially adapted for controlling the microwave discharge
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H03B 5/326 the resonator being an acoustic wave device, e.g. SAW or BAW device
• CPC Class Codes: H03H 7/18 Networks for phase shifting
• CPC Class Codes: H03H 9/02582 of diamond substrates
• CPC Class Codes: H05B 6/686 Circuits comprising a signal generator and power amplifier, e.g. using solid state oscillators
• CPC Class Codes: H05B 6/705 using microwave tuning
• CPC Class Codes: H05B 6/806 for laboratory use
• CPC Class Codes: Y02B 40/00 Technologies aiming at improving the efficiency of home appliances, e.g. induction cooking or efficient technologies for refrigerators, freezers or dish washers

Abstract

A high-frequency heating device including: a solid-state oscillator that generates a microwave; an amplifier that amplifies the microwave generated by the solid-state oscillator; an isolator that is connected to a stage subsequent to the amplifier and blocks a reflected wave directed from an object exposed with the microwave; an antenna that irradiates the microwave toward the object; and a metal cavity that traps therein the microwave irradiated to the object.

Claims

1. A high-frequency heating device, comprising:

a solid-state oscillator that generates a microwave;

an amplifier that amplifies the microwave generated by the solid-state oscillator;

an isolator that is connected to a stage subsequent to the amplifier, the isolator blocking a reflected wave directed from an object exposed with the microwave;

an antenna that irradiates the microwave toward the object; and

a metal cavity that traps the microwave irradiated to the object.

2. The high-frequency heating device of claim 1, wherein:

the solid-state oscillator includes a surface acoustic wave resonator incorporated in an oscillator loop.

3. The high-frequency heating device according to claim 2, wherein the surface acoustic wave resonator includes:

a thin-film piezoelectric layer placed over a diamond layer or a diamond-like carbon film layer; and

an IDT electrode formed on the thin-film piezoelectric layer.

4. The high-frequency heating device according to claim 2, wherein the surface acoustic wave resonator includes:

a thin-film piezoelectric layer that is placed over a monocrystalline diamond layer or a hard carbon film having an elastic constant close to that of polycrystalline diamond;

an IDT electrode formed on the thin-film piezoelectric layer; and

a silicon oxide film formed on the IDT electrode.

5. The high-frequency heating device according to claim 2, further comprising:

an equal divider that equally divides an electric power in the oscillator loop for output outside of the oscillator loop; and

a phase shifter that varies a phase in the oscillator loop.

6. The high-frequency heating device according to claim 1, wherein

the antenna is a unidirectional planar antenna or a phased array antenna.

7. The high-frequency heating device according to claim 1, further comprising:

a progressive wave/reflected wave detection unit that detects progressive wave power to be directed to the antenna, and reflected wave power to be returned from the antenna; and

an operation unit that exercises control over the microwave coming from the antenna based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit.

8. The high-frequency heating device according to claim 7, wherein

based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit, the operation unit exercises control over at least one of an oscillation frequency of the solid-state oscillator, a presence or absence of an output of the solid-state oscillator, or an amplification level of the amplifier.

9. The high-frequency heating device according to claim 7, further comprising a matching unit that is placed at a stage subsequent to the progressive wave/reflected wave detection unit for impedance matching with a load, wherein

the operation unit exercises control over the matching unit based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit.

10. The high-frequency heating device according to claim 1, wherein

the antenna is plurally provided in the metal cavity, and

a power splitter that controls power allocation to the antenna is placed at a stage subsequent to the isolator.

11. A semiconductor manufacturing device, comprising:

a chamber that isolates a process object;

a gas guiding unit that guides a reaction gas into the chamber;

a solid-state oscillator that generates a microwave;

an amplifier that amplifies the microwave generated by the solid-state oscillator;

an isolator that is connected to a stage subsequent to the amplifier, the isolator blocking a reflected wave directed from an object exposed with the microwave;

a plasma generation unit that controls plasma generation in the chamber by irradiating the microwave to the reaction gas; and

an evacuation unit that evacuates the chamber.

12. The semiconductor manufacturing device of claim 11 wherein:

the solid-state oscillator includes a surface acoustic wave resonator incorporated in an oscillator loop.

13. The semiconductor manufacturing device according to claim 12, wherein the surface acoustic wave resonator includes:

a thin-film piezoelectric layer placed over a diamond layer or a diamond-like carbon film layer; and

an IDT electrode formed on the thin-film piezoelectric layer.

14. The semiconductor manufacturing device according to claim 12, wherein the surface acoustic wave resonator includes:

a thin-film piezoelectric layer that is placed over a monocrystalline diamond layer or a hard carbon film having an elastic constant close to that of polycrystalline diamond;

an IDT electrode formed on the thin-film piezoelectric layer; and

a silicon oxide film formed on the IDT electrode.

15. The semiconductor manufacturing device according to claim 12, further comprising:

an equal divider that equally divides an electric power in the oscillator loop for output to an outside of the oscillator loop; and

a phase shifter that varies a phase in the oscillator loop.

16. The semiconductor manufacturing device according to claim 11, wherein

the antenna is a unidirectional planar antenna or a phased array antenna.

17. The semiconductor manufacturing device according to claim 11, further comprising:

a progressive wave/reflected wave detection unit that detects progressive wave power to be directed to the antenna, and reflected wave power to be returned from the antenna; and

an operation unit that exercises control over the microwave coming from the antenna based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit.

18. The semiconductor manufacturing device according to claim 17, wherein

based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit, the operation unit exercises control over at least one of an oscillation frequency of the solid-state oscillator, a presence or absence of an output of the solid-state oscillator, or an amplification level of the amplifier.

19. The semiconductor manufacturing device according to claim 17, further comprising a matching unit that is placed at a stage subsequent to the progressive wave/reflected wave detection unit for impedance matching with a load, wherein

the operation unit exercises control over the matching unit based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit.

20. The semiconductor manufacturing device according to claim 11, wherein

the antenna is plurally provided in the chamber, and

a power splitter that controls power allocation to the antenna is placed at a stage subsequent to the isolator.

21. A light source device, comprising:

a solid-state oscillator that generates a microwave;

an amplifier that amplifies the microwave generated by the solid-state oscillator;

an isolator that is connected to a stage subsequent to the amplifier, the isolator blocking a reflected wave coming from a noble gas exposed with the microwave;

a glass tube filled with the noble gas; and

an antenna that is placed in the glass tube, and irradiates the microwave toward the noble gas.

22. The light source device of claim 21, wherein:

the solid-state oscillator includes a surface acoustic wave resonator incorporated in an oscillator loop.

23. The light source device according to claim 22, wherein the surface acoustic wave resonator includes:

a thin-film piezoelectric layer placed over a diamond layer or a diamond-like carbon film layer; and

an IDT electrode formed on the thin-film piezoelectric layer.

24. The light source device according to claim 22, wherein the surface acoustic wave resonator includes:

a thin-film piezoelectric layer placed over a monocrystalline diamond layer or a hard carbon film having an elastic constant close to that of polycrystalline diamond;

an IDT electrode formed on the thin-film piezoelectric layer; and

a silicon oxide film formed on the IDT electrode.

25. The light source device according to claim 22, further comprising:

an equal divider that equally divides an electric power in the oscillator loop for output to an outside of the oscillator loop; and

a phase shifter that varies a phase in the oscillator loop.

26. The light source device according to claim 21, wherein

the antenna is a unidirectional planar antenna or a phased array antenna.

27. The light source device according to claim 21, further comprising:

a progressive wave/reflected wave detection unit that detects progressive wave power to be directed to the antenna, and reflected wave power to be returned from the antenna; and

an operation unit that exercises control over the microwave coming from the antenna based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit.

28. The light source device according to claim 27, wherein

based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit, the operation unit exercises control over at least one of an oscillation frequency of the solid-state oscillator, a presence or absence of an output of the solid-state oscillator, or an amplification level of the amplifier.

29. The light source device according to claim 27, further comprising a matching unit that is placed at a stage subsequent to the progressive wave/reflected wave detection unit for impedance matching with a load, wherein

the operation unit exercises control over the matching unit based on the progressive wave power and the reflected wave power detected by the progressive wave/reflected wave detection unit.

30. The light source device according to claim 21, wherein

the antenna is plurally provided in the glass tube, and

a power splitter that controls power allocation to the antenna is placed at a stage subsequent to the isolator.