Multicolor photodiode array and method of manufacturing
First Claim
1. A photodiode structure comprising:
- an n-type ohmic contact layer;
an n-type InP (or GaAs) substrate etched out from backside and connected to part of the n-type contact layer;
a single or plurality of n-type buffer layer(s) attached to the n-type substrate;
an InGaAs absorption layer attached to the buffer layer;
a spacer layer attached to the absorption layer;
a highly doped p-type Indium (In)-based ohmic contact layer attached to the spacer layer, and;
an p-type ohmic contact on the surface of the p-type contact layer.
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Abstract
Novel structures of the photodetector having broad spectral ranges detection capability are provided. The photodetector can offer high quantum efficiency >95% over wide spectral ranges, high frequency response >10 GHz (@3 dB). The photodiode array of N×N elements is also provided. The array can also offer wide spectral detection ranges ultraviolet to 2500 nm with high quantum efficiency >95% and high quantum efficiency of >10 GHz, cross-talk of <1%. In the array, each photodiode can be independently addressable and can be made either as top-illuminated or as bottom illuminated type detector. The photodiode and its array provided in this invention, could be used in multiple purpose applications such as telecommunication, imaging and sensing applications including surveillance, satellite tracking, advanced lidar systems, etc. The advantages of this photodetectors are that they are uncooled and performance will not be degraded under wide range of temperature variation.
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Citations
20 Claims
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1. A photodiode structure comprising:
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an n-type ohmic contact layer;
an n-type InP (or GaAs) substrate etched out from backside and connected to part of the n-type contact layer;
a single or plurality of n-type buffer layer(s) attached to the n-type substrate;
an InGaAs absorption layer attached to the buffer layer;
a spacer layer attached to the absorption layer;
a highly doped p-type Indium (In)-based ohmic contact layer attached to the spacer layer, and;
an p-type ohmic contact on the surface of the p-type contact layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A photodiode structure comprising:
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an n-type InP substrate etched out from backside;
a single or plurality of n-type buffer layer(s) attached to the n-type substrate;
an InGaAs absorption layer connected to the buffer layer; and
a single or plurality of doped p-type In-based ohmic contact layer(s) connected to the absorption layer, and;
an p-type ohmic contact on the surface of the p-type contact layer. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. An array device comprising:
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an n-type substrate etched out from backside and connected to part of the n-type contact layer;
a single or plurality of n-type buffer layer(s) attached to the n-type substrate;
a single or plurality of InGaAs absorption layer(s) connected to the buffer layer(s) with an array of sections etched into the absorption layer to electrically isolate each section;
a group of doped p-type In-based ohmic contact layer(s) on each isolated section of the absorption layer, and;
a group of highly doped p-type ohmic contacts with separate contacts for each isolated section of the absorption layer. - View Dependent Claims (17, 18, 19, 20)
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Specification