Light-emitting element with porous light-emitting layers
First Claim
1. A light-emitting element with porous light-emitting layers, comprising:
- a substrate;
a first conductive cladding layer;
a second conductive cladding layer; and
at least one porous light-emitting layer formed between the first conductive cladding layer and the second conductive cladding layer, the porous light-emitting layer having an upper barrier layer, a lower barrier layer and a carrier trap layer, the carrier trap layer positioned between the upper barrier layer and the lower barrier layer, the carrier trap layer having a plurality of chevron structures for defining a plurality of valley shaped structures, the carrier trap layer being an indium-containing nitride structure, the energy band gap of the carrier trap layer being less than that of the upper barrier layer and the lower barrier layer.
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Accused Products
Abstract
The invention relates to a light-emitting element with porous light-emitting layers. The light-emitting element comprises: a substrate, a first conductive cladding layer, a second conductive cladding layer and at least one porous light-emitting layer. The porous light-emitting layer is formed between the first conductive cladding layer and the second conductive cladding layer, and has an upper barrier layer, a lower barrier layer and a carrier trap layer. The carrier trap layer positioned between the upper barrier layer and the lower barrier layer has a plurality of chevron structures for defining a plurality of valley shaped structures, and is an indium-containing nitride structure, the energy band gap of which is less than those of the upper barrier layer and the lower barrier layer. By utilizing the light-emitting element of the invention, the driving voltage of the element can be decreased significantly; thereby a preferred crystalline structure can be obtained so that the anti-static electricity ability and element reliability could be improved. Moreover, a plurality of porous light-emitting layers with different wavelengths may be grown on the light-emitting element of the invention, so as to elevate the performance of the light-emitting element effectively, and also to achieve a light-mixing element of a single chip, meanwhile so as to obtain the properties of high light-emitting benefit, high reliability, high light-mixing modularity and low cost and the like.
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Citations
16 Claims
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1. A light-emitting element with porous light-emitting layers, comprising:
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a substrate;
a first conductive cladding layer;
a second conductive cladding layer; and
at least one porous light-emitting layer formed between the first conductive cladding layer and the second conductive cladding layer, the porous light-emitting layer having an upper barrier layer, a lower barrier layer and a carrier trap layer, the carrier trap layer positioned between the upper barrier layer and the lower barrier layer, the carrier trap layer having a plurality of chevron structures for defining a plurality of valley shaped structures, the carrier trap layer being an indium-containing nitride structure, the energy band gap of the carrier trap layer being less than that of the upper barrier layer and the lower barrier layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A light-emitting element with porous light-emitting layers, including:
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a substrate;
an N-type conductive cladding layer;
a P-type conductive cladding layer; and
at least one porous light-emitting layer with a first wavelength and at least one light-emitting layer with a second wavelength, formed between the N-type conductive cladding layer and the P-type conductive cladding layer, the porous light-emitting layer with the first wavelength being adjacent to the P-type conductive cladding layer, the first wavelength being different from the second wavelength, the porous light-emitting layer with the first wavelength having an upper barrier layer, a lower barrier layer and a carrier trap layer;
the carrier trap layer positioned between the upper barrier layer and the lower barrier layer, and the carrier trap layer having a plurality of chevron structures for defining a plurality of valley shaped structures;
the carrier trap layer being an indium-containing nitride structure, the energy band gap of the carrier trap layer being less than that of the upper barrier layer and the lower barrier layer. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification