Reflective electrode and compound semiconductor light emitting device including the same
First Claim
1. A reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising:
- a first electrode layer comprising Ag or Ag-alloy which forms an ohmic contact with the p-type compound semiconductor layer;
a third electrode layer comprising a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir and Rh formed on the first electrode layer; and
a fourth electrode layer comprising a light reflective material formed on the third electrode layer.
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Abstract
Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.
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Citations
20 Claims
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1. A reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising:
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a first electrode layer comprising Ag or Ag-alloy which forms an ohmic contact with the p-type compound semiconductor layer;
a third electrode layer comprising a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir and Rh formed on the first electrode layer; and
a fourth electrode layer comprising a light reflective material formed on the third electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A compound semiconductor light emitting device comprising:
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an n-type electrode;
a p-type electrode; and
at least an n-type compound semiconductor layer, an active layer, and a p-type compound semiconductor layer between the n-type and p-type electrodes, wherein the p-type electrode includes;
a first electrode layer comprising Ag or Ag-alloy which forms an ohmic contact with the p-type compound semiconductor layer;
a third electrode layer comprising a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir and Rh on the first electrode layer; and
a fourth electrode layer formed of a light reflective material on the third electrode layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification