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Flip-chip electrode light-emitting element formed by multilayer coatings

  • US 20060081869A1
  • Filed: 10/04/2005
  • Published: 04/20/2006
  • Est. Priority Date: 10/20/2004
  • Status: Abandoned Application
First Claim
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1. A flip-chip electrode light-emitting element formed by multilayer coatings, comprising:

  • a) a translucent substrate;

    b) a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, the semiconductor die structure includes;

    i) a first type semiconductor layer formed on a top side of the translucent substrate;

    ii) a first electrode formed on a partial surface of the first type semiconductor layer;

    iii) an active layer formed on a top side of the first type semiconductor layer without covering the first electrode;

    iv) a second type semiconductor layer formed on a top side of the active layer; and

    v) a second electrode formed on a top side of the second type semiconductor layer;

    c) a submount having formed thereon at least two traces corresponding to the first and the second electrode, respectively; and

    d) at least one intermediate layer adapted to support the semiconductor die structure in a flip chip mounting manner on the traces of the submount, wherein the second electrode formed by multilayer coatings includes;

    a transparent conducting layer for spreading electrical current, the transparent conducting layer being formed on a top side of the second type semiconductor layer;

    a highly reflective metal layer formed on a top side of the transparent conducting layer;

    a barrier layer for preventing the metallic diffusion, the barrier layer being formed on a top side of the high reflective metal layer; and

    a bonding layer electrically coupled to the intermediate layer, the bonding layer being formed on a top side of the barrier layer.

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