Flip-chip electrode light-emitting element formed by multilayer coatings
First Claim
1. A flip-chip electrode light-emitting element formed by multilayer coatings, comprising:
- a) a translucent substrate;
b) a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, the semiconductor die structure includes;
i) a first type semiconductor layer formed on a top side of the translucent substrate;
ii) a first electrode formed on a partial surface of the first type semiconductor layer;
iii) an active layer formed on a top side of the first type semiconductor layer without covering the first electrode;
iv) a second type semiconductor layer formed on a top side of the active layer; and
v) a second electrode formed on a top side of the second type semiconductor layer;
c) a submount having formed thereon at least two traces corresponding to the first and the second electrode, respectively; and
d) at least one intermediate layer adapted to support the semiconductor die structure in a flip chip mounting manner on the traces of the submount, wherein the second electrode formed by multilayer coatings includes;
a transparent conducting layer for spreading electrical current, the transparent conducting layer being formed on a top side of the second type semiconductor layer;
a highly reflective metal layer formed on a top side of the transparent conducting layer;
a barrier layer for preventing the metallic diffusion, the barrier layer being formed on a top side of the high reflective metal layer; and
a bonding layer electrically coupled to the intermediate layer, the bonding layer being formed on a top side of the barrier layer.
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Accused Products
Abstract
A flip-chip electrode light-emitting element formed by multilayer coatings where a translucent conducting layer and a highly reflective metal layer acts as flip-chip electrode for enhancing the LED luminous efficiency. The flip-chip electrode light-emitting element includes a translucent substrate, a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, and an intermediate layer adapted to support the inverted semiconductor die structure on a submount. The flip-chip electrode formed by multiplayer coatings includes a current-spreading transparent conducting layer formed on a top side of the second type semiconductor layer, a highly reflective metal layer formed on a top side of the transparent conducting layer, a metallic diffusion barrier layer formed on a top side of the highly reflective metal layer, and a bonding layer electrically coupled to the intermediate layer and formed on a top side of the barrier layer. Moreover, an ohmic contact layer is formed on the transparent conducting layer. And a passivation layer encloses the die structure for insulating p/n interface and for avoiding the creation of the leakage current.
144 Citations
17 Claims
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1. A flip-chip electrode light-emitting element formed by multilayer coatings, comprising:
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a) a translucent substrate;
b) a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, the semiconductor die structure includes;
i) a first type semiconductor layer formed on a top side of the translucent substrate;
ii) a first electrode formed on a partial surface of the first type semiconductor layer;
iii) an active layer formed on a top side of the first type semiconductor layer without covering the first electrode;
iv) a second type semiconductor layer formed on a top side of the active layer; and
v) a second electrode formed on a top side of the second type semiconductor layer;
c) a submount having formed thereon at least two traces corresponding to the first and the second electrode, respectively; and
d) at least one intermediate layer adapted to support the semiconductor die structure in a flip chip mounting manner on the traces of the submount, wherein the second electrode formed by multilayer coatings includes;
a transparent conducting layer for spreading electrical current, the transparent conducting layer being formed on a top side of the second type semiconductor layer;
a highly reflective metal layer formed on a top side of the transparent conducting layer;
a barrier layer for preventing the metallic diffusion, the barrier layer being formed on a top side of the high reflective metal layer; and
a bonding layer electrically coupled to the intermediate layer, the bonding layer being formed on a top side of the barrier layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A flip-chip electrode light-emitting element formed by multilayer coatings, comprising:
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a) a translucent substrate;
b) a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, the semiconductor die structure includes;
i) a first type semiconductor layer formed on a top side of the translucent substrate;
ii) a first electrode formed on a partial surface of the first type semiconductor layer;
iii) an active layer formed on a top side of the first type semiconductor layer without covering the first electrode;
iv) a second type semiconductor layer formed on a top side of the active layer; and
v) a second electrode formed on a top side of the second type semiconductor layer;
c) a submount having formed thereon at least two traces corresponding to the first and the second electrode, respectively; and
d) at least one intermediate layer adapted to support the semiconductor die structure in a flip chip mounting manner on the traces of the submount, wherein the second electrode formed by multilayer coatings includes;
a transparent conducting layer formed on a top side of the second type semiconductor layer;
an ohmic contact layer formed on a partial surface of the transparent conducting layer;
a passivation layer enclosing the semiconductor die structure and a partial surface of the first electrode, but not covering the surface of the ohmic contact layer;
a highly reflective metal layer adhered to a top side of the ohmic contact layer;
a barrier layer for preventing the metallic diffusion, the barrier layer being formed on a top side of the high reflective metal layer; and
a bonding layer electrically coupled to the intermediate layer, the bonding layer being formed on a top side of the barrier layer. - View Dependent Claims (16, 17)
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Specification