×

Semiconductor device and method of fabricating the same

  • US 20060081903A1
  • Filed: 10/14/2005
  • Published: 04/20/2006
  • Est. Priority Date: 10/18/2004
  • Status: Abandoned Application
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a semiconductor substrate including a first layer of a first conductivity type;

    a second layer of a second conductivity type formed in a surface region of the first layer;

    a third layer of a first conductivity type selectively formed in a surface region of the second layer;

    a trench having a bottom surface and a side surface, and having a depth extending from a top surface of the third layer into the first layer;

    a gate dielectric film formed on the bottom surface and the side surface dielectric particles buried in a bottom portion of the trench, and being in contact with the gate dielectric film; and

    a gate electrode buried in another portion of the trench, being in contact with the gate dielectric film and the dielectric particles, and extending from a level of the top surface of the third layer to a boundary between the gate electrode and the dielectric particles, and extending beyond a level of boundary between the first layer and the second layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×