Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same
First Claim
1. A silicon-on-insulator (SOI) substrate comprising:
- a substrate;
an oxide layer formed on the substrate; and
a silicon layer formed on the oxide layer in electrical connection with the substrate so as to prevent a notch from being generated when etching a pattern in said silicon layer.
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Accused Products
Abstract
A silicon-on-insulator (SOI) substrate including laminated layers of a substrate, an oxide layer, and a silicon layer in order. The oxide layer has an electrifying hole fluidly connected with the substrate and the electrifying hole is filled with a part of the silicon layer. A method for fabricating the floating structure is also disclosed which includes the steps of forming an oxide layer having a predetermined thickness on a substrate, forming one or more electrifying holes in an area of the oxide layer corresponding to an inner part of the floating structure, forming a silicon layer on the oxide layer including an electrification structure electrically connecting the silicon layer to the substrate, forming a pattern for the floating structure on the silicon layer, removing the oxide layer corresponding to an inner area of the pattern, forming a thermal oxide layer on a surface of the silicon layer, and removing the thermal oxide layer to form the floating structure.
6 Citations
16 Claims
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1. A silicon-on-insulator (SOI) substrate comprising:
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a substrate;
an oxide layer formed on the substrate; and
a silicon layer formed on the oxide layer in electrical connection with the substrate so as to prevent a notch from being generated when etching a pattern in said silicon layer. - View Dependent Claims (2)
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3. A method for fabricating an SOI substrate, which comprises
forming an oxide layer on a substrate; - and
forming a silicon layer on the oxide layer including an electrification structure connecting the silicon layer to the substrate. - View Dependent Claims (4, 5, 6)
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7. A method for fabricating a floating structure using an SOI substrate, which comprises:
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depositing an oxide layer on a substrate in a predetermined thickness;
forming a silicon layer on the oxide layer including an electrification structure electrically connecting the silicon layer to the substrate;
forming a pattern for the floating structure on the silicon layer;
removing the oxide layer corresponding to the inner area of the pattern;
forming a second oxide layer on a surface of the silicon layer; and
removing the second oxide layer to form said floating structure. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification