Method for determining programming voltage of nonvolatile memory

• US 20060083067A1
• Filed: 10/14/2005
• Published: 04/20/2006
• Est. Priority Date: 10/14/2004
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Ueda, Naoki
• Granted Patent: US 7,203,095 B2
• Time in Patent Office: Days
• US Class Current: 365/185.180
• CPC Class Codes: G11C 16/04 using variable threshold transistors, e.g. FAMOS
• CPC Class Codes: G11C 16/12 Programming voltage switching circuits
• CPC Class Codes: G11C 16/3436 Arrangements for verifying correct programming or erasure
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells
• CPC Class Codes: G11C 29/02 Detection or location of defective auxiliary circuits, e.g. defective refresh counters
• CPC Class Codes: G11C 29/021 in voltage or current generators
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 29/50 Marginal testing, e.g. race, voltage or current testing
• CPC Class Codes: G11C 29/50004 of threshold voltage

Abstract

A method for determining programming voltage of a nonvolatile memory in which any variation in the threshold voltage at the memory cell after programming by hot carrier injection can be suppressed includes the steps of: setting the drain voltage to an initial setting level; applying the drain voltage and a gate voltage at a predetermined programming time; shifting the drain voltage to another setting level; reprogramming the memory cell with the another setting level of the drain voltage; measuring the threshold voltage of the memory cell; and determining a differential represented by a ratio of a change in the threshold voltage to a change in the drain voltage at the threshold voltage after the reprogramming, whereby when the determined differential and the measured threshold voltage remain within their respective permissible ranges, the setting determined by the shifting step is defined as an optimum level of the drain voltage.

Claims

1. A method for determining programming voltage in order to set the drain voltage with an optimum level applied to the programming operation for memory cells by hot carrier injection in a nonvolatile memory which includes the memory cells for storing information on the basis of the number of carriers accumulated between the control gate and the channel region, the method comprising the steps of:

setting the drain voltage to an initial setting level;

programming the memory cell through applying the drain voltage and a gate voltage to the drain and the control gate respectively of the memory cell for a predetermined programming time;

shifting the drain voltage to another setting level;

reprogramming the memory cell with the another setting level of the drain voltage determined by the shifting step;

measuring the threshold voltage of the memory cell after the programming operation in the programming step or the reprogramming step; and

determining a differential represented by a ratio of a change in the threshold voltage to a change in the drain voltage at the threshold voltage after the reprogramming step, wherein

when the differential determined in the determining step and the threshold voltage measured in the measuring step remain within their respective permissible ranges, the setting level determined in the shifting step is defined as an optimum level of the drain voltage.

2. The method according to claim 1, wherein

when at least one of the differential determined in the determining step and the threshold voltage measured in the measuring step is out of its permissible range, the shifting step, the reprogramming step, the measuring step and the determining step are repeated.

3. The method according to claim 1, wherein

the drain voltage determined in the setting step is a minimum of the absolute in the range of changes in the drain voltage for conducting the programming operation, the change derived from the manufacturing process and memory cell array designing.

4. The method according to claim 1, wherein

the permissible range of the differential is from 1.0 to 4.0.

5. The method according to claim 1, wherein

the permissible range of the threshold voltage is not smaller than a reference level substantially equal to a threshold voltage used for the program verification.

6. A device for determining programming voltage in order to set the drain voltage with an optimum level applied to the programming operation for memory cells by hot carrier injection in a nonvolatile memory which includes the memory cells for storing information basis of the number of carriers accumulated between the control gate and the channel region, the device comprising:

control means for controlling the operations of the setting step, the programming step, the shifting step, the reprogramming step, the measuring step and the determining step of the method according to claim 1.

7. A nonvolatile memory comprising:

a plurality of memory cells; and

the programming voltage determining device according to claim 6, wherein

the memory cell can be programmed by hot carrier injection into a region between a control gate and a channel region and stores data in the form of carriers accumulated in the region.