Light emitting device and method for manufacturing the same

• US 20060084213A1
• Filed: 11/21/2005
• Published: 04/20/2006
• Est. Priority Date: 05/15/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Osame, Mitsuaki, Murakami, Satoshi, Yamazaki, Shunpei
• Granted Patent: US 7,723,179 B2
• Time in Patent Office: Days
• US Class Current: 438/197
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/856 comprising reflective means
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements

Abstract

A light emitting element containing an organic compound has a disadvantage in that it tends to be deteriorated by various factors, so that the greatest problem thereof is to increase its reliability (make longer its life span). The present invention provides a method for manufacturing an active matrix type light emitting device and the configuration of such an active matrix type light emitting device having high reliability. In the method, a contact hole extending to a source region or a drain region is formed, and then an interlayer insulation film made of a photosensitive organic insulating material is formed on an interlayer insulation film. The interlayer insulation film has a curved surface on its upper end portion. Subsequently, an interlayer insulation film provided as a silicon nitride film having a film thickness of 20 to 50 nm is formed by a sputtering method using RF power supply.

Claims

1. A method for manufacturing a light emitting device, comprising the steps of:

forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;

forming a first contact hole extending to one of the source region and the drain region by etching the inorganic insulation film;

forming an organic insulation film on the inorganic insulation film;

forming a second contact hole extending to the one of the source region and the drain region by etching the organic insulation film;

forming a connecting electrode for making a connection with the one of the source region and the drain region;

forming a first electrode in contact with the connecting electrode;

forming a layer containing an organic compound on the first electrode; and

forming a second electrode on the layer containing the organic compound.

2. A method for manufacturing a light emitting device according to claim 1, wherein the first electrode functions as one of an anode and a cathode of a light emitting element.

3. A method for manufacturing a light emitting device according to claim 1, wherein the organic insulation film has a curved surface with a curvature radius on an upper end portion, and the curvature radius is 0.2 μ

m to 3 μ

m.

4. A method for manufacturing the light emitting device according to claim 1, wherein the light emitting device is one selected from the group consisting of a video camera, a digital camera, a goggles-type display, a car navigation system, a personal computer, a DVD player, electronic playing equipment, and a personal digital assistant.

5. A method for manufacturing a light emitting device, comprising the steps of:

forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;

forming at least two first contact holes extending to the source region and the drain region respectively by etching the inorganic insulation film;

forming a wiring for making a connection with one of the source region and the drain region;

forming an organic insulation film on the inorganic insulation film and the wiring;

forming at least two second contact holes by etching the organic insulation film, one of the two second contact holes is extending to the wiring and the other one of the two second contact holes is extending to the other one of the source region and the drain region;

forming at least two connecting electrodes, one of the two connecting electrodes is connected to the wiring and the other one of the two connecting electrodes is connected to the other one of the source region and the drain region;

forming a first electrode in contact with at least one of the two connecting electrodes;

forming a layer containing an organic compound on the first electrode; and

forming a second electrode on the layer containing the organic compound.

6. A method for manufacturing a light emitting device according to claim 5, wherein the first electrode functions as one of an anode and a cathode of a light emitting element.

7. A method for manufacturing a light emitting device according to claim 5, wherein the organic insulation film has a curved surface with a curvature radius on an upper end portion, and the curvature radius is 0.2 μ

m to 3 μ

m.

8. A method for manufacturing the light emitting device according to claim 5, wherein the light emitting device is one selected from the group consisting of a video camera, a digital camera, a goggles-type display, a car navigation system, a personal computer, a DVD player, electronic playing equipment, and a personal digital assistant.

9. A method for manufacturing a light emitting device, comprising the steps of:

forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;

forming a first contact hole extending to one of the source region and the drain region by etching the inorganic insulation film;

forming an organic insulation film on the inorganic insulation film;

forming a second contact hole extending to the one of the source region and the drain region by etching the organic insulation film;

forming an first electrode comprised of a laminate of metallic layers connecting to the one of the source region and the drain region;

forming an insulating material that covers an end portion of the first electrode;

thinning a center of the first electrode by etching using the insulating material as a mask such that a slant surface is exposed along an edge of the first electrode;

forming a layer containing an organic compound on the first electrode; and

forming a second electrode on the layer containing the organic compound.

10. A method for manufacturing a light emitting device according to claim 9, wherein the first electrode functions as one of an anode and a cathode of a light emitting element.

11. A method for manufacturing a light emitting device according to claim 9, wherein the organic insulation film has a curved surface with a curvature radius on an upper end portion, and the curvature radius is 0.2 μ

m to 3 μ

m.

12. A method for manufacturing a light emitting device according to claim 9, wherein the insulating material has a curved surface with a curvature radius on an upper end portion, and the curvature radius is 0.2 μ

m to 3 μ

m.

13. A method for manufacturing the light emitting device according to claim 9, wherein the light emitting device is one selected from the group consisting of a video camera, a digital camera, a goggles-type display, a car navigation system, a personal computer, a DVD player, electronic playing equipment, and a personal digital assistant.

14. A method for manufacturing a light emitting device, comprising the steps of:

forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;

forming a silicon nitride film on the inorganic insulation film by a sputtering method;

forming a first contact hole extending to one of the source region and the drain region by etching the inorganic insulation film and the silicon nitride film;

forming an organic insulation film on the silicon nitride film;

forming a second contact hole extending to the one of the source region and the drain region by etching the organic insulation film;

forming a connecting electrode for making a connection with the one of the source region and the drain region;

forming a first electrode in contact with the connecting electrode;

forming a layer containing an organic compound on the first electrode; and

forming a second electrode on the layer containing the organic compound.

15. A method for manufacturing a light emitting device according to claim 14, wherein the first electrode functions as one of an anode and a cathode of a light emitting element.

16. A method for manufacturing a light emitting device according to claim 14, wherein the organic insulation film has a curved surface with a curvature radius on an upper end portion, and the curvature radius is 0.2 μ

m to 3 μ

m.

17. A method for manufacturing the light emitting device according to claim 14, wherein the light emitting device is one selected from the group consisting of a video camera, a digital camera, a goggles-type display, a car navigation system, a personal computer, a DVD player, electronic playing equipment, and a personal digital assistant.

18. A method for manufacturing a light emitting device, comprising the steps of:

forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;

forming a first contact hole extending to one of the source region and the drain region by etching the inorganic insulation film;

forming an organic insulation film on the inorganic insulation film;

forming a silicon nitride film on the organic insulation film by a sputtering method;

forming a second contact hole extending to the one of the source region and the drain region by etching the organic insulation film and the silicon nitride film;

forming a connecting electrode for making a connection with the one of the source region and the drain region;

forming a first electrode in contact with the connecting electrode;

forming a layer containing an organic compound on the first electrode; and

forming a second electrode on the layer containing the organic compound.

19. A method for manufacturing a light emitting device according to claim 18, wherein the first electrode functions as one of an anode and a cathode of a light emitting element.

20. A method for manufacturing a light emitting device according to claim 18, wherein the organic insulation film has a curved surface with a curvature radius on an upper end portion, and the curvature radius is 0.2 μ

m to 3 μ

m.

21. A method for manufacturing the light emitting device according to claim 18, wherein the light emitting device is one selected from the group consisting of a video camera, a digital camera, a goggles-type display, a car navigation system, a personal computer, a DVD player, electronic playing equipment, and a personal digital assistant.