Light emitting device and method for manufacturing the same
First Claim
1. A method for manufacturing a light emitting device, comprising the steps of:
- forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;
forming a first contact hole extending to one of the source region and the drain region by etching the inorganic insulation film;
forming an organic insulation film on the inorganic insulation film;
forming a second contact hole extending to the one of the source region and the drain region by etching the organic insulation film;
forming a connecting electrode for making a connection with the one of the source region and the drain region;
forming a first electrode in contact with the connecting electrode;
forming a layer containing an organic compound on the first electrode; and
forming a second electrode on the layer containing the organic compound.
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Abstract
A light emitting element containing an organic compound has a disadvantage in that it tends to be deteriorated by various factors, so that the greatest problem thereof is to increase its reliability (make longer its life span). The present invention provides a method for manufacturing an active matrix type light emitting device and the configuration of such an active matrix type light emitting device having high reliability. In the method, a contact hole extending to a source region or a drain region is formed, and then an interlayer insulation film made of a photosensitive organic insulating material is formed on an interlayer insulation film. The interlayer insulation film has a curved surface on its upper end portion. Subsequently, an interlayer insulation film provided as a silicon nitride film having a film thickness of 20 to 50 nm is formed by a sputtering method using RF power supply.
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Citations
21 Claims
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1. A method for manufacturing a light emitting device, comprising the steps of:
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forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;
forming a first contact hole extending to one of the source region and the drain region by etching the inorganic insulation film;
forming an organic insulation film on the inorganic insulation film;
forming a second contact hole extending to the one of the source region and the drain region by etching the organic insulation film;
forming a connecting electrode for making a connection with the one of the source region and the drain region;
forming a first electrode in contact with the connecting electrode;
forming a layer containing an organic compound on the first electrode; and
forming a second electrode on the layer containing the organic compound. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a light emitting device, comprising the steps of:
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forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;
forming at least two first contact holes extending to the source region and the drain region respectively by etching the inorganic insulation film;
forming a wiring for making a connection with one of the source region and the drain region;
forming an organic insulation film on the inorganic insulation film and the wiring;
forming at least two second contact holes by etching the organic insulation film, one of the two second contact holes is extending to the wiring and the other one of the two second contact holes is extending to the other one of the source region and the drain region;
forming at least two connecting electrodes, one of the two connecting electrodes is connected to the wiring and the other one of the two connecting electrodes is connected to the other one of the source region and the drain region;
forming a first electrode in contact with at least one of the two connecting electrodes;
forming a layer containing an organic compound on the first electrode; and
forming a second electrode on the layer containing the organic compound. - View Dependent Claims (6, 7, 8)
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9. A method for manufacturing a light emitting device, comprising the steps of:
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forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;
forming a first contact hole extending to one of the source region and the drain region by etching the inorganic insulation film;
forming an organic insulation film on the inorganic insulation film;
forming a second contact hole extending to the one of the source region and the drain region by etching the organic insulation film;
forming an first electrode comprised of a laminate of metallic layers connecting to the one of the source region and the drain region;
forming an insulating material that covers an end portion of the first electrode;
thinning a center of the first electrode by etching using the insulating material as a mask such that a slant surface is exposed along an edge of the first electrode;
forming a layer containing an organic compound on the first electrode; and
forming a second electrode on the layer containing the organic compound. - View Dependent Claims (10, 11, 12, 13)
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14. A method for manufacturing a light emitting device, comprising the steps of:
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forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;
forming a silicon nitride film on the inorganic insulation film by a sputtering method;
forming a first contact hole extending to one of the source region and the drain region by etching the inorganic insulation film and the silicon nitride film;
forming an organic insulation film on the silicon nitride film;
forming a second contact hole extending to the one of the source region and the drain region by etching the organic insulation film;
forming a connecting electrode for making a connection with the one of the source region and the drain region;
forming a first electrode in contact with the connecting electrode;
forming a layer containing an organic compound on the first electrode; and
forming a second electrode on the layer containing the organic compound. - View Dependent Claims (15, 16, 17)
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18. A method for manufacturing a light emitting device, comprising the steps of:
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forming an inorganic insulation film that covers a source region of a thin film transistor and a drain region of the thin film transistor;
forming a first contact hole extending to one of the source region and the drain region by etching the inorganic insulation film;
forming an organic insulation film on the inorganic insulation film;
forming a silicon nitride film on the organic insulation film by a sputtering method;
forming a second contact hole extending to the one of the source region and the drain region by etching the organic insulation film and the silicon nitride film;
forming a connecting electrode for making a connection with the one of the source region and the drain region;
forming a first electrode in contact with the connecting electrode;
forming a layer containing an organic compound on the first electrode; and
forming a second electrode on the layer containing the organic compound. - View Dependent Claims (19, 20, 21)
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Specification