Vertical organic transistor

• US 20060086933A1
• Filed: 12/06/2005
• Published: 04/27/2006
• Est. Priority Date: 05/31/2002
• Status: Active Grant

• Current Assignee: Ricoh Company Limited
• Original Assignee: Hiroyuki Iechi, Kazuhiro Kudoh
• Inventors: Iechi, Hiroyuki, Kudoh, Kazuhiro
• Granted Patent: US 7,276,728 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 10/00 Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers integrated devices or assemblies of multiple devices H10K19/00
• CPC Class Codes: H10K 10/40 Organic transistors
• CPC Class Codes: H10K 50/30 Organic light-emitting transistors
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Abstract

A vertical organic transistor comprises a substrate, a first electrode positioned over the substrate, a first semiconductor layer formed over the first electrode, a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern, a second semiconductor layer formed over the second electrode and the first semiconductor layer, and a third electrode formed over the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are made of different semiconductor materials.

Claims

1-20. -20. (canceled)

21. A vertical organic transistor comprising:

a substrate;

a first electrode positioned over the substrate;

a first semiconductor layer formed over the first electrode;

a second electrode formed on the first semiconductor layer and shaped into a prescribed pattern;

a second semiconductor layer formed over the second electrode and the first semiconductor layer, the second semiconductor layer being made of a material different from that of the first semiconductor layer; and

a third electrode formed over the second semiconductor layer, wherein at least one of the first and second semiconductor layers is formed of an organic semiconductor material, and the first and second semiconductor layers have different types of electrical conductivities.