Method of forming a transistor having a dual layer dielectric
First Claim
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1. A method, comprising:
- forming a channel layer over at least a portion of a substrate, wherein said channel layer substantially comprises zinc indium oxide. depositing a first material over at least a portion of a substrate by use of one or more low temperature processes to form a first portion of a dielectric layer, at least a portion of said first portion of a dielectric layer comprising inorganic dielectric material;
depositing a second material over and/or in contact with said first portion of a dielectric layer by use of one or more solution processes to form a second portion of a dielectric layer, at least a portion of said second portion of a dielectric layer comprising organic dielectric material, such as to form at least a portion of a thin film transistor (TFT).
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Accused Products
Abstract
Embodiments of methods, apparatuses, components, and/or systems for forming transistor having a dual layer dielectric are described.
50 Citations
74 Claims
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1. A method, comprising:
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forming a channel layer over at least a portion of a substrate, wherein said channel layer substantially comprises zinc indium oxide. depositing a first material over at least a portion of a substrate by use of one or more low temperature processes to form a first portion of a dielectric layer, at least a portion of said first portion of a dielectric layer comprising inorganic dielectric material;
depositing a second material over and/or in contact with said first portion of a dielectric layer by use of one or more solution processes to form a second portion of a dielectric layer, at least a portion of said second portion of a dielectric layer comprising organic dielectric material, such as to form at least a portion of a thin film transistor (TFT). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of forming a thin film transistor, comprising:
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a step for forming a source and drain electrode over at least a portion of a substrate;
a step for forming a channel layer over at least a portion of the substrate, said channel layer substantially comprising zinc indium oxide. a step for depositing a first material over at least a portion of a substrate by use of one or more steps for low temperature processing to form a first portion of a dielectric layer, at least a portion of said first material layer comprising inorganic dielectric material;
a step for depositing a second material over and/or in contact with said first portion of a dielectric layer by use of one or more steps for solution processing to form a second portion of a dielectric layer, at least a portion of said second material layer comprising organic dielectric material; and
a step for forming a gate electrode over and/or in contact with at least a portion of said second portion of a dielectric layer, such as to form at least a portion of a thin film transistor (TFT). - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. An apparatus, comprising:
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at least one thin film transistor (TFT) having;
a substrate;
a channel layer disposed over at least a portion of the substrate, wherein said channel layer comprises zinc indium oxide, and wherein said channel layer comprises at least a first surface and a substantially opposing second surface;
a first portion of a dielectric layer disposed adjacent to said first surface of said channel layer, wherein said first portion of a dielectric layer comprises aluminum oxide, and wherein said first portion of a dielectric layer comprises at least a first surface, disposed adjacent to said first surface of said channel layer, and a substantially opposing second surface; and
a second portion of a dielectric layer disposed adjacent to said second surface of said first portion of a dielectric layer, wherein said second portion of a dielectric layer comprises a UV curable monomer, and wherein said second portion of a dielectric layer comprises at least a first surface, disposed adjacent to said second surface of said first portion of a dielectric layer, and a substantially opposing second surface. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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48. An apparatus, comprising:
means for forming a thin film transistor (TFT) having a substrate, at least one channel layer, a plurality of electrodes, and a dielectric layer having a first portion and a second portion, wherein said channel layer substantially comprises zinc indium oxide, at least a portion of said electrodes substantially comprise indium tin oxide, said first portion of a dielectric layer substantially comprises one or more oxides, and said second portion of a dielectric layer substantially comprises one or more UV curable monomers. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60)
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61. A thin film transistor (TFT), formed substantially by a process comprising:
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forming a source and drain electrode over at least a portion of a substrate;
forming a channel layer over at least a portion of the substrate, said channel layer substantially comprising zinc indium oxide. depositing a first material over at least a portion of a substrate by use of one or more low temperature processes to form a first portion of a dielectric layer, at least a portion of said first material layer comprising inorganic dielectric material;
depositing a second material over and/or in contact with said first portion of a dielectric layer by use of one or more solution processes to form a second portion of a dielectric layer, at least a portion of said second material layer comprising organic dielectric material; and
forming a gate electrode over and/or in contact with at least a portion of said second portion of a dielectric layer such that at least a portion of a thin film transistor (TFT) is formed. - View Dependent Claims (62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74)
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Specification