Multi-layer film stack for extinction of substrate reflections during patterning

• US 20060086954A1
• Filed: 12/07/2005
• Published: 04/27/2006
• Est. Priority Date: 12/27/2000
• Status: Abandoned Application

• Current Assignee: Khaled A. Elamrawi, Sanjay S. Natarajan, Sean W. King
• Original Assignee: Khaled A. Elamrawi, Sanjay S. Natarajan, Sean W. King
• Inventors: King, Sean W., Natarajan, Sanjay S., Elamrawi, Khaled A.
• Application Number:
  US11/297,390
• Publication Number:
  US 20060086954A1
• Time in Patent Office: Days
• US Class Current: 257/213
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 438/902 Capping layer
• CPC Class Codes: Y10S 438/945 Special, e.g. metal
• CPC Class Codes: Y10S 438/95 Multilayer mask including nonradiation sensitive layer
• CPC Class Codes: Y10S 438/952 Utilizing antireflective layer
• CPC Class Codes: Y10S 438/958 Passivation layer

Abstract

A method including introducing a dielectric layer over a substrate between an interconnection line and the substrate, the dielectric layer comprising a plurality of alternating material layers; and patterning an interconnection to the substrate. An apparatus comprising a substrate comprising a plurality of devices formed thereon; and an interlayer dielectric layer comprising a base layer and a cap layer, the cap layer comprising a plurality of alternating material layers overlying the substrate.

Claims

1. An apparatus comprising:

a substrate comprising a plurality of devices formed thereon; and

an interlayer dielectric layer comprising a base layer and a cap layer, the cap layer comprising a plurality of alternating material layers overlying the substrate.

2. The apparatus of claim 1, wherein the cap layer comprises silicon dioxide as the ultimate material layer.

3. The apparatus of claim 1, wherein the cap layer comprises a plurality of silicon dioxide layers alternated with at least one other material layers.

4. The apparatus of claim 3, wherein the number of alternating silicon dioxide layers comprises at least six.