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Nonplanar device with thinned lower body portion and method of fabrication

  • US 20060086977A1
  • Filed: 10/25/2004
  • Published: 04/27/2006
  • Est. Priority Date: 10/25/2004
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a semiconductor body formed on an insulating layer of a substrate, said semiconductor body having a top surface opposite a bottom surface formed on said insulating layer and a pair of laterally opposite sidewalls wherein the distance between said laterally opposite sidewalls at said top surface is greater than at said bottom surface;

    a gate dielectric layer formed on said top surface of said semiconductor body and on said sidewalls of said semiconductor body;

    a gate electrode formed on said gate dielectric layer on said top surface and sidewalls of said semiconductor body; and

    a pair of source/drain region formed in said semiconductor body on opposite sides of said gate electrode.

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