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Method of fabricating poly crystalline silicon TFT

  • US 20060088961A1
  • Filed: 10/12/2005
  • Published: 04/27/2006
  • Est. Priority Date: 10/12/2004
  • Status: Abandoned Application
First Claim
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1. A method of fabricating a thin film transistor comprising the operations of:

  • forming a poly crystalline silicon having a source, a drain, and a channel region between the source and the drain on a substrate in a predetermined pattern;

    forming an insulating layer on the poly crystalline silicon;

    forming a silicon-based heat absorption material layer on the insulating layer;

    exposing the source and the drain by patterning the insulating layer and the heat absorption material layer and forming a gate and a gate insulating layer corresponding to the channel region;

    injecting impurities into the source, the drain, and the gate; and

    heat processing the gate insulating layer and the heat absorption material layer by applying thermal energy to the heat absorption material layer.

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