Method of forming a solution processed transistor having a multilayer dielectric
First Claim
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1. A method, comprising:
- depositing a first inorganic dielectric material over at least a portion of a substrate by use of one or more solution processes;
depositing a second inorganic dielectric material over and/or in contact with at least a portion of said first inorganic dielectric material by use of one or more solution processes, wherein said second inorganic dielectric material is substantially amorphous and/or glass-like, to form at least a portion of a dielectric layer of a thin film transistor.
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Abstract
Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed transistor having a multilayer dielectric are described.
60 Citations
43 Claims
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1. A method, comprising:
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depositing a first inorganic dielectric material over at least a portion of a substrate by use of one or more solution processes;
depositing a second inorganic dielectric material over and/or in contact with at least a portion of said first inorganic dielectric material by use of one or more solution processes, wherein said second inorganic dielectric material is substantially amorphous and/or glass-like, to form at least a portion of a dielectric layer of a thin film transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method, comprising:
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a step for depositing a first inorganic dielectric material over at least a portion of a substrate by use of one or more steps for solution processing;
a step for processing at least a portion of said first inorganic dielectric material;
a step for depositing a second inorganic dielectric material over and/or in contact with said at least a portion of said first inorganic dielectric material by use of one or more steps for solution processing, wherein said second inorganic dielectric material is substantially amorphous and/or glass-like; and
a step for processing at least a portion of said second inorganic dielectric material, to form at least a portion of a dielectric layer of a thin film transistor. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. An apparatus, comprising:
a thin film transistor (TFT) having a substrate, at least one channel layer, a plurality of electrodes and a dielectric layer, wherein said dielectric layer substantially comprises a first dielectric material and a second dielectric material, wherein said first dielectric material substantially comprises one or more metal oxides, wherein said second dielectric material substantially comprises amorphous inorganic material, and wherein said first dielectric material is in contact with at least a portion of the channel layer, and said second dielectric material is in contact with at least a portion of said first dielectric material. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. An apparatus, comprising:
means for forming a thin film transistor (TFT) having a substrate, at least one channel layer, a plurality of electrodes and a dielectric layer, wherein said dielectric layer substantially comprises a first dielectric material and a second dielectric material, wherein said first dielectric material substantially comprises one or more metal oxides, wherein said second dielectric material substantially comprises amorphous inorganic material, and wherein said first dielectric material is in contact with at least a portion of the channel layer, and said second dielectric material is in contact with at least a portion of said first dielectric material. - View Dependent Claims (28, 29, 30, 31, 32, 33)
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34. A thin film transistor (TFT), formed substantially by a process comprising:
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a step for depositing a first material over at least a portion of a substrate utilizing one or more steps for solution processing to form a first portion of a dielectric layer, said first material substantially comprising a first inorganic dielectric material;
a step for depositing a second material over and/or in contact with said at least a portion of said first portion of a dielectric layer by use of one or more steps for solution processing to form a second portion of a dielectric layer, said second material substantially comprising a substantially amorphous second inorganic dielectric material, to form at least a portion of a dielectric layer of a thin film transistor. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43)
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Specification