Low temperature silicon compound deposition
First Claim
1. A method of fabricating integrated circuits, comprising:
- depositing a silicon layer on a plurality of substrates in a batch process chamber by exposing the substrates to a supply of trisilane;
interrupting the supply of trisilane; and
forming a silicon compound layer by exposing the silicon layer to a reactive species after interrupting the supply.
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Accused Products
Abstract
Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.
202 Citations
51 Claims
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1. A method of fabricating integrated circuits, comprising:
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depositing a silicon layer on a plurality of substrates in a batch process chamber by exposing the substrates to a supply of trisilane;
interrupting the supply of trisilane; and
forming a silicon compound layer by exposing the silicon layer to a reactive species after interrupting the supply. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 18, 19, 20, 21, 22, 23, 24)
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17. The method of claim 17, wherein intermixing the ammonia with the plasma-activated reactive species activates the ammonia to form nitrogen radicals from the ammonia.
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25. A method of semiconductor processing, comprising:
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establishing reaction rate limited deposition conditions in a batch reactor chamber;
depositing a silicon layer on each of a plurality of substrates in the chamber by exposing the substrates to a silicon source, wherein the silicon layer has a thickness between about 3 Å and
about 30 Å
, wherein the silicon source is a polysilane;
interrupting flow of the silicon source and removing the silicon source from the batch reactor chamber; and
exposing the silicon layer to radicals to form a silicon compound layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50)
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51-65. -65. (canceled)
Specification