×

Localized use of high-K dielectric for high performance capacitor structures

  • US 20060089001A1
  • Filed: 10/27/2004
  • Published: 04/27/2006
  • Est. Priority Date: 10/27/2004
  • Status: Abandoned Application
First Claim
Patent Images

1. A method of forming a capacitor structure, the method comprising:

  • forming a first dielectric layer of a first dielectric material on a substrate, wherein the first dielectric material has a first dielectric constant;

    etching a localized area into the first dielectric layer;

    filling the localized area with a second dielectric material, wherein the second dielectric material has a second dielectric constant and wherein the second dielectric constant is high relative to the first dielectric constant;

    etching trenches in the second dielectric material for metal lines; and

    filling the trenches with metal to form a metal layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×