Localized use of high-K dielectric for high performance capacitor structures
First Claim
1. A method of forming a capacitor structure, the method comprising:
- forming a first dielectric layer of a first dielectric material on a substrate, wherein the first dielectric material has a first dielectric constant;
etching a localized area into the first dielectric layer;
filling the localized area with a second dielectric material, wherein the second dielectric material has a second dielectric constant and wherein the second dielectric constant is high relative to the first dielectric constant;
etching trenches in the second dielectric material for metal lines; and
filling the trenches with metal to form a metal layer.
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Accused Products
Abstract
Techniques are provided for localized use of high-K dielectric material within a capacitor structure. Low-K dielectric is deposited or spun on as usual. Then, a larger area is etched back and then filled with high-K dielectric material. The high-K dielectric material is then patterned and copper routing lines are trenched in and then filled with metal. A dual damascene process may be used to connect a second metal layer using a series of vias for each metal line. In an aluminum process, an insulator layer is formed over the substrate and an aluminum layer is formed over the insulator layer. The aluminum layer is etched back to for metal lines over the insulator layer. The remaining area is filled with low-K dielectric. Then, the area between the metal lines is etched back and filled with high-K dielectric to increase the capacitance value of the structure.
13 Citations
19 Claims
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1. A method of forming a capacitor structure, the method comprising:
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forming a first dielectric layer of a first dielectric material on a substrate, wherein the first dielectric material has a first dielectric constant;
etching a localized area into the first dielectric layer;
filling the localized area with a second dielectric material, wherein the second dielectric material has a second dielectric constant and wherein the second dielectric constant is high relative to the first dielectric constant;
etching trenches in the second dielectric material for metal lines; and
filling the trenches with metal to form a metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a capacitor structure, the method comprising:
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forming a dielectric layer of a first dielectric material on a substrate, wherein the first dielectric material has a first dielectric constant;
forming an aluminum layer over the dielectric layer;
etching the aluminum layer to form metal lines;
filling a remainder of area around the metal lines with the first dielectric material;
etching an area between the metal lines to form trenches; and
filling the trenches with a second dielectric material, wherein the second dielectric material has a second dielectric constant and wherein the second dielectric constant is high relative to the first dielectric constant. - View Dependent Claims (9, 10, 11, 12)
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13. An apparatus, comprising:
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a dielectric layer of a first dielectric material on a substrate, wherein the first dielectric material has a first dielectric constant; and
a capacitor structure within the dielectric layer, wherein the capacitor structure includes metal lines separated by a second dielectric material, wherein the second dielectric material has a second dielectric constant and wherein the second dielectric constant is high relative to the first dielectric constant. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification