Semiconductor light-emitting device with improved light extraction efficiency
First Claim
1. A semiconductor light-emitting device, comprising a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate, wherein the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface, the side patterns consisting of protrusions or depressions so as to scatter or diffract light, emitted from side surfaces of the light-emitting device, to an upper portion or a lower portion of the light-emitting device.
3 Assignments
0 Petitions
Accused Products
Abstract
The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
20 Citations
12 Claims
-
1. A semiconductor light-emitting device, comprising a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate,
wherein the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface, the side patterns consisting of protrusions or depressions so as to scatter or diffract light, emitted from side surfaces of the light-emitting device, to an upper portion or a lower portion of the light-emitting device.
Specification