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Semiconductor light-emitting device with improved light extraction efficiency

  • US 20060091376A1
  • Filed: 04/05/2005
  • Published: 05/04/2006
  • Est. Priority Date: 11/04/2004
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting device, comprising a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate, wherein the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface, the side patterns consisting of protrusions or depressions so as to scatter or diffract light, emitted from side surfaces of the light-emitting device, to an upper portion or a lower portion of the light-emitting device.

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