Active matrix type organic light emitting diode device and fabrication method thereof
First Claim
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1. An active matrix type organic light emitting diode (AMOLED) device comprising:
- a buffer layer formed on an insulation substrate;
a semiconductor layer formed on the buffer layer and having drain/source electrodes;
a gate insulation film formed on the buffer layer including the semiconductor layer;
a gate electrode and a capacitor lower electrode formed on the gate insulation film;
a first interlayer insulation film formed on the gate electrode and the capacitor lower electrode;
a cathode electrode and a capacitor upper electrode formed on the first interlayer insulation film;
a second interlayer insulation film formed on the resulting structure and having contact holes exposing portions of the cathode electrode, the drain electrode, the source electrode, the capacitor upper electrode and the capacitor lower electrode;
first and second conductive layer patterns formed on the second interlayer insulation film, the first conductive layer pattern connecting the cathode electrode and the drain electrode, the second conductive layer pattern connecting the source electrode and the capacitor upper electrode;
a passivation layer formed on the resulting structure and having an opening exposing a portion of the cathode electrode;
an EL layer formed inside the opening; and
an anode electrode formed on the EL layer, wherein a plurality of recesses are formed on a surface of at least one of the buffer layer, the gate insulation film, the first interlayer insulation film, the second interlayer insulation film and the passivation layer.
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Abstract
An active matrix type organic light emitting diode (AMOLED) device and its fabrication method are discussed. In one embodiment, an OLED device includes an EL configured to emit light, a driving TFT configured to control the EL, a storage capacitor coupled to the driving TFT, and at least one insulation layer configured to insulate at least one of the EL, the driving TFT and the storage capacitor, and including a plurality of recesses formed on a surface of the at least one insulation layer.
68 Citations
25 Claims
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1. An active matrix type organic light emitting diode (AMOLED) device comprising:
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a buffer layer formed on an insulation substrate;
a semiconductor layer formed on the buffer layer and having drain/source electrodes;
a gate insulation film formed on the buffer layer including the semiconductor layer;
a gate electrode and a capacitor lower electrode formed on the gate insulation film;
a first interlayer insulation film formed on the gate electrode and the capacitor lower electrode;
a cathode electrode and a capacitor upper electrode formed on the first interlayer insulation film;
a second interlayer insulation film formed on the resulting structure and having contact holes exposing portions of the cathode electrode, the drain electrode, the source electrode, the capacitor upper electrode and the capacitor lower electrode;
first and second conductive layer patterns formed on the second interlayer insulation film, the first conductive layer pattern connecting the cathode electrode and the drain electrode, the second conductive layer pattern connecting the source electrode and the capacitor upper electrode;
a passivation layer formed on the resulting structure and having an opening exposing a portion of the cathode electrode;
an EL layer formed inside the opening; and
an anode electrode formed on the EL layer, wherein a plurality of recesses are formed on a surface of at least one of the buffer layer, the gate insulation film, the first interlayer insulation film, the second interlayer insulation film and the passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for fabricating an active matrix type organic light emitting diode (AMOLED) device, the method comprising:
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forming a buffer layer on an insulation substrate;
forming a semiconductor layer on the buffer layer;
forming a gate insulation film on the semiconductor layer;
forming a gate electrode and a capacitor lower electrode on the gate insulation film and forming a drain electrode region and a source electrode region at the semiconductor layer below both sides of the gate electrode;
forming a first interlayer insulation film on a surface of the resulting structure;
forming a cathode electrode and a capacitor upper electrode on the first interlayer insulation film;
forming a second interlayer insulation film on a surface of the resulting structure;
forming a plurality of contact holes exposing portions of the cathode electrode, the drain electrode region, the source electrode region, the capacitor upper electrode and the capacitor lower electrode through at least one etching process;
forming a first conductive layer pattern connecting the cathode electrode and the drain electrode region, and a second conductive layer pattern connecting the source electrode region and the capacitor upper electrode through the plurality of contact holes;
forming a passivation film on a surface of the resulting structure and patterning the passivation film to form an opening exposing a portion of the cathode electrode;
forming an EL layer inside the opening and forming an anode electrode thereon; and
forming a plurality of recesses on a surface of at least one of the buffer layer, the gate insulation layer, the first interlayer insulation film, the second interlayer insulation film and the passivation film. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. An organic light emitting diode (OLED) device comprising:
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an EL configured to emit light;
a driving TFT configured to control the EL;
a storage capacitor coupled to the driving TFT; and
at least one insulation layer configured to insulate at least one of the EL, the driving TFT and the storage capacitor, and including a plurality of recesses formed on a surface of the at least one insulation layer. - View Dependent Claims (17, 18, 19, 20)
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21. A method of forming an organic light emitting diode (OLED) device, the method comprising:
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forming an EL configured to emit light;
forming a driving TFT configured to control the EL;
forming a storage capacitor coupled to the driving TFT; and
forming at least one insulation layer configured to insulate at least one of the EL, the driving TFT and the storage capacitor, wherein the at least one insulation layer includes a plurality of recesses formed on a surface of the at least one insulation layer. - View Dependent Claims (22, 23, 24, 25)
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Specification