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Active matrix type organic light emitting diode device and fabrication method thereof

  • US 20060091399A1
  • Filed: 10/27/2005
  • Published: 05/04/2006
  • Est. Priority Date: 10/29/2004
  • Status: Active Grant
First Claim
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1. An active matrix type organic light emitting diode (AMOLED) device comprising:

  • a buffer layer formed on an insulation substrate;

    a semiconductor layer formed on the buffer layer and having drain/source electrodes;

    a gate insulation film formed on the buffer layer including the semiconductor layer;

    a gate electrode and a capacitor lower electrode formed on the gate insulation film;

    a first interlayer insulation film formed on the gate electrode and the capacitor lower electrode;

    a cathode electrode and a capacitor upper electrode formed on the first interlayer insulation film;

    a second interlayer insulation film formed on the resulting structure and having contact holes exposing portions of the cathode electrode, the drain electrode, the source electrode, the capacitor upper electrode and the capacitor lower electrode;

    first and second conductive layer patterns formed on the second interlayer insulation film, the first conductive layer pattern connecting the cathode electrode and the drain electrode, the second conductive layer pattern connecting the source electrode and the capacitor upper electrode;

    a passivation layer formed on the resulting structure and having an opening exposing a portion of the cathode electrode;

    an EL layer formed inside the opening; and

    an anode electrode formed on the EL layer, wherein a plurality of recesses are formed on a surface of at least one of the buffer layer, the gate insulation film, the first interlayer insulation film, the second interlayer insulation film and the passivation layer.

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